Tianru Wu

Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu–Ni alloys

Wafer-scale single-crystalline graphene monolayers are highly sought after as an ideal platform for electronic and other applications. At present, state-of-the-art growth methods based on chemical vapour deposition allow the synthesis of one-centimetre-sized single-crystalline graphene domains in ∼12 h, by suppressing nucleation events on the growth substrate. Here we demonstrate an efficient strategy for achieving large-area single-crystalline graphene by letting a single nucleus evolve into a monolayer at a fast rate. By locally feeding carbon precursors to a desired position of a substrate composed of an optimized Cu-Ni alloy, we synthesized an ∼1.5-inch-large graphene monolayer in 2.5 h. Localized feeding induces the formation of a single nucleus on the entire substrate, and the optimized alloy activates an isothermal segregation mechanism that greatly expedites the growth rate. This approach may also prove effective for the synthesis of wafer-scale single-crystalline monolayers of other two-dimensional materials.

Synthesis of large single-crystal hexagonal boron nitride grains on Cu–Ni alloy

Hexagonal boron nitride (h-BN) has attracted significant attention because of its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapour deposition in earlier reports are always polycrystalline with small grains because of high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm(2) by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 μm(2), approximately two orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nanoelectronic applications.

Nitrogen and boron doped monolayer graphene by chemical vapor deposition using polystyrene, urea and boric acid

Chemical doping with foreign atoms is an effective method to intrinsically modify the properties of the host materials. In this paper, we report a facile strategy to prepare nitrogen and boron doped monolayer graphene by using urea and boric acid as solid precursors. By adjusting the elemental precursors, the nitrogen content could be modulated from 0.9 to 4.8% for nitrogen doped graphene and the boron content from 0.7 to 4.3% for boron doped graphene respectively, as estimated by X-ray photoelectron spectroscopy. The mobilities of the nitrogen and boron doped graphene-based back-gate field-effect transistors are about 350–550 cm2 V−1 s−1 and 450–650 cm2 V −1 s−1 respectively. Our results are better than plasma treated nitrogen and boron doped graphene. Therefore the synthesis of nitrogen and boron doped graphene sheets by a solid doping elemental precursor method is considered to be an efficient approach to producing graphene with excellent optical and electrical performances at relatively low cost.

Facile synthesis of Ag interlayer doped graphene by chemical vapor deposition using polystyrene as solid carbon source.

Graphene was synthesized by chemical vapor deposition using polystyrene as the solid carbon source. The number of graphene layers could be controlled by regulating the weight of polystyrene under atmospheric pressure at 1000 °C. Silver nanoparticles were then deposited on the graphene by a citrate reduction method. The interaction between graphene and silver was investigated by suface-enhanced Raman scattering spectra and X-ray photoelectron spectroscopy. The change in the G band position indicates n-type doping of the graphene due to an interaction between the silver and the graphene. Silver interlayer doped four-layer graphene shows a sheet resistance of 63 Ω/sq and a light transmittance of 85.4% at 550 nm. The optical and electrical quality of graphene exceeds the minimum industry standard for indium tin oxide replacement materials. It is clearly understood that the environmental sheet resistance stability of the interlayer doped graphene film is better than that of surface doped graphene sheets. The presence of graphene at the surface also acts as a protective layer for the inner silver ions and clusters.

Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches

Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.

Copper‐Vapor‐Assisted Rapid Synthesis of Large AB‐Stacked Bilayer Graphene Domains on Cu‐Ni Alloy

The synergic effects of Cu85Ni15 and the copper vapor evaporated from copper foil enabled the fast growth of a ≈300 μm bilayer graphene in ≈10 minutes. The copper vapor reduces the growth rate of the first graphene layer while the carbon dissolved in the alloy boosts the growth of the subsequently developed second graphene layer with an AB-stacking order.

Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu–Ni Alloy

Graphene/hexagonal boron nitride (h‐BN) monolayer in‐plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in‐plane epitaxy of graphene/h‐BN heterostructure is demonstrated on Cu–Ni substrates. The introduction of nickel to copper substrate not only enhances the capability of decomposing polyaminoborane residues but also promotes graphene growth via isothermal segregation. On the alloy surface partially covered by h‐BN, graphene is found to nucleate at the corners of the as‐formed h‐BN grains, and the high growth rate for graphene minimizes the damage of graphene‐growth process on h‐BN lattice. As a result, high‐quality graphene/h‐BN in‐plane heterostructure with epitaxial relationship can be formed, which is supported by extensive characterizations. Photodetector device applications are demonstrated based on the in‐plane heterostructure. The success will have important impact on future research and applications based on this unique material platform.

Magnetotransport of polycrystalline graphene: Shubnikov-de Haas oscillation and weak localization study

Magnetotransport measurements were performed on a cross-junction made from polycrystalline graphene grown at a low temperature. The Shubnikov-de Haas oscillation is observed, from which the cyclotron mass mc can be derived varying from 0.043 to 0.055 times that of free electron. The changing rate of electron temperature is found much lower than that in pristine graphene via the universal electron heating study. Investigations on the characteristic lengths of weak localization reveal that the atomically sharp defects dominate the elastic scattering process, while studies on the coherent rate report that the Nyquist effect governs the inelastic scattering process with a little modulation from the direct Coulomb interaction. The scattering lengths in the polycrystalline graphene are comparable to that of exfoliated graphene on SiO2. These findings indicate that some key scattering parameters which characterize the excellent properties of intrinsic graphene are preserved in the polycrystalline graphene, which...

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

Insulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical fields. Two-dimensional (2D) layered materials have superb electronic, physical, chemical, thermal, and optical properties, and they can be effectively used to provide additional performances, such as flexibility and transparency. 2D layered insulators are called to be essential in future electronic devices, but their reliability, degradation kinetics, and dielectric breakdown (BD) process are still not understood. In this work, the dielectric breakdown process of multilayer hexagonal boron nitride (h-BN) is analyzed on the nanoscale and on the device level, and the experimental results are studied via theoretical models. It is found that under electrical stress, local charge accumulation and charge trapping/detrapping are the onset mechanisms for dielectric BD formation. By means of conductive atomic force microscopy, the BD event was triggered at several locations on the surface of different dielectrics (SiO2, HfO2, Al2O3, multilayer h-BN, and monolayer h-BN); BD-induced hillocks rapidly appeared on the surface of all of them when the BD was reached, except in monolayer h-BN. The high thermal conductivity of h-BN combined with the one-atom-thick nature are genuine factors contributing to heat dissipation at the BD spot, which avoids self-accelerated and thermally driven catastrophic BD. These results point to monolayer h-BN as a sublime dielectric in terms of reliability, which may have important implications in future digital electronic devices.

Raman enhancement by graphene-Ga2O3 2D bilayer film

Abstract2D β-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene film during the cooling process. In particular, tenfold enhancement of graphene Raman scattering signal was detected on Ga2O3 flakes, and XPS indicates the C-O bonding between graphene and Ga2O3. The mechanism of Raman enhancement was discussed. The 2D Ga2O3-2D graphene structure may possess potential applications.PACS61.46.-w (structure of nanoscale materials), 68.65.Pq (graphene films), 74.25.nd (Raman and optical spectroscopy)