Tibor Ižák

Study of diamond film nucleation by ultrasonic seeding in different solutions

In this study we have investigated diamond nucleation on Si substrates by ultrasonic seeding with different liquid solutions of Ultradispersed Detonation Diamond (UDD) powder in a mixture of metal nano- or microparticles (Ni, Co, Y). The influence of different solutions on nucleation efficiency was investigated. For highlighting nucleation centers and better evaluation of the nucleation process the nucleated samples were moved into a Microwave Plasma Enhanced Chemical Vapor Deposition (MW CVD) reactor and a ”short-time” (10 min), then followed by a ”long-time” (+1 hour), diamond deposition was performed. The morphology of samples was characterized by Scanning Electron Microscopy (SEM) and the chemical composition of grown diamond layer was investigated by Raman Spectroscopy. From the measurements we found out that microsized metal particles positively influenced nucleation and the uniformity of the deposited diamond thin film. The lowest surface roughness was achieved in the case of nanodiamond powder mixed with Co and Y metal powder. The influence of Ni, Co and Y to the nucleation and early growth stage are discussed.

TECHNOLOGICAL ASPECTS IN FABRICATION OF MICRO- AND NANO-SIZED CARBON BASED FEATURES: NANORODS, PERIODICAL ARRAYS AND SELF-STANDING MEMBRANES

Abstract Diamond and/or carbon thin films are in the center of interest due to their variability and extraordinary combination of intrinsic properties. However, some applications require fabrication of films with tailored properties. Especially, fabrication of periodic structures is highly attractive due to their increased surface area. In this contribution we point out the key technological aspects for fabrication of micro- and nano-sized carbon-based structures. Three representative structures are presented: diamond nanorods, self-assembled templates and self-standing diamond membranes. We found that the diameter of diamond nanorods can be controlled in a broad range from 10 to 200 nm by the masking material (Au vs Ni) and its initial thickness (from few to tens of nanometers). The assembly of polystyrene microspheres in mono- or multi-layer with square or hexagonal periodicities was controlled by the spin-coating parameters. The diamond porous membrane was selectively grown on Si substrate with an interdigital or mesh like geometry. Advantages of each structure as well as the fabrication limitations are discussed more in detail and finally their representative applications are pointed out.

A Raman spectroscopy study on differently deposited DLC layers in pulse arc system

This study is focused on Raman spectroscopy investigations of differently deposited diamond-like carbon (DLC) layers due to varying: (i) Ar and/or N2 flow rate, (ii) number of impulses, and (iii) bias voltage during the growth process. Samples were prepared by a physical vapor deposition method in a pulse arc system. It is shown that Ar and N2 flow rates as well as the bias voltage influence the morphology and chemical composition of the deposited DLC layers. By changing the number of impulses, the number of carbon atoms sputtered from target in the vacuum chamber changes, which is reflected in the thickness and morphology of the DLC layers. Visible light Raman spectroscopy of 632 nm excitation wavelength was used for deep analysis of the deposited layers.

Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films

Abstract Nanocrystalline diamond films with bright photoluminescence of silicon-vacancy colour centres have been grown using a microwave plasma enhanced CVD technique. The influence of substrate material (quartz, Al2O3, Mo and Si) on a reproducible fabrication of diamond thin films with Si-V optical centres is presented. Film quality and morphology are characterized by Raman spectroscopy and SEM technique. SEM shows well faceted diamond grains with sizes from 170 to 300 nm. The diamond peak is confirmed in Raman spectra for all samples. In the case of the quartz substrate, a redshift of the diamond peak is observed (≈3.5 cm−1) due to tension in the diamond film. The steady-state photoluminescence intensity was measured in the temperature range from 11 K to 300 K. All spectra consist of a broad emission band with a maximum near 600 nm and of a sharp zero phonon line in the vicinity of 738 nm corresponding to Si-V centres that is accompanied with a phonon sideband peaking at 757 nm. Activation energies for the thermal quenching of Si-V centre photoluminescence were determined and the effect of the substrate on photoluminescence properties is discussed too.

FABRICATION AND CHARACTERIZATION OF N-TYPE ZINC OXIDE/P-TYPE BORON DOPED DIAMOND HETEROJUNCTION

Abstract Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

Electrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture

The paper deals with electrical characterization of nanocrystalline diamond / p- type crystalline silicon heterostructures. The diamond films were prepared with and without nitrogen addition into CH4/CO2/H2 gas mixture during the deposition. The introduced nitrogen promoted amorphization instead of creating sp2 domains. The structure with nitrogen exhibits shallow donor state with energy of 0.28 eV. It is suggested that origin of such a state is related to nitrogen atoms trapped at the vacancies.