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Featured researches published by Tieer Gu.


SID Symposium Digest of Technical Papers | 1998

25.1: Similarities between TFT Arrays for Direct‐Conversion X‐Ray Sensors and High‐Aperture AMLCDS

W. den Boer; Steven Aggas; Tieer Gu; Young Hee Byun; C.-B. Qiu and; Scott V. Thomsen

The fabrication and operation of a 14 in. × 8.5 in. TFT array for Direct Conversion X-ray sensors with 1536 by 2560 pixels is described. Similarities in process and design are discussed with TFT arrays for high aperture AMLCDS, that also use a low k inter-level dielectric to improve performance.


IEEE Transactions on Electron Devices | 1996

An amorphous silicon TFT with annular-shaped channel and reduced gate-source capacitance

Young Hee Byun; W. Den Boer; Mohshi Yang; Tieer Gu

An amorphous silicon thin-film transistor (a-Si TFT) with an annular-shaped channel is presented. The annular-channel TFT (AC-TFT) is fabricated using standard design rules with 4 /spl mu/m minimum feature size which is common in large area applications such as active matrix LCDs. The AC-TFT has two times smaller gate-to-source capacitance of about 50 fF in the on-state as compared to a conventional rectangular-channel TFT (RC-TFT) which has the same on-current of more than 10 /spl mu/A at V/sub gs/=20 V and V/sub ds/=10 V. Its off-current under illumination from the gate side is about ten times lower than that of the RC-TFT.


Medical Imaging 1998: Physics of Medical Imaging | 1998

Thin-film transistor array technology for high-performance direct-conversion x-ray sensors

Willem den Boer; Steven Aggas; Young Hee Byun; Tieer Gu; Johnny Q. Zhong; Scott V. Thomsen; Lothar S. Jeromin; Denny L. Y. Lee

Thin Film Transistor (TFT) array technology is presented for Digital X-ray Sensors in Direct Radiography applications. Circuit simulations were performed to optimize the design of the TFT array. The sensor array uses a combination of a mushroom electrode with a high fill factor of 86% and a polymer passivation dielectric to minimize column capacitance and improve signal-to-noise ratio. A 14 in. X 8.5 in. sensor array with 1536 X 2560 pixels was developed using this technology. The TFT arrays are processed entirely in Class 1 clean room environments to eliminate line defects and minimize pixel defects. The best 14 in. X 8.5 in. panels have exhibited fewer than 0.001% pixel defects, as detected during in process testing prior to Se coating. In typical image quality comparisons with conventional X-ray film/screen combinations, the digital X-ray sensor exhibited equal or better performance than film-screens. Clinical studies were also conducted. Radiologists concluded that diagnostically significant projection radiographic images can be produced with the new digital X-ray sensor that are equivalent or superior to conventional film/screen images at the same X-ray exposures. The detector recently received FDA approval.


Archive | 1996

LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween

Willem den Boer; John Z. Z. Zhong; Tieer Gu


Archive | 2005

LCD with increased pixel opening sizes

Tieer Gu; Willem den Boer


Archive | 1997

X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween

Tieer Gu; Willem den Boer


Archive | 1998

Method of making a large area imager with improved signal-to-noise ratio

Willem den Boer; John Z. Z. Zhong; Tieer Gu; Young Hee Byun; Steven Aggas


Archive | 1995

Method of fabricating a TFT with reduced channel length

Willem den Boer; Tieer Gu


Archive | 1996

Thin film transistor with reduced channel length for liquid crystal displays

Willem den Boer; Tieer Gu


Archive | 1997

Method of making an LCD or X-ray imaging device with first and second insulating layers

Tieer Gu; Willem den Boer

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