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Dive into the research topics where Tien-Lin Lee is active.

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Featured researches published by Tien-Lin Lee.


Journal of Physical Chemistry Letters | 2015

C60 as an Efficient n-Type Compact Layer in Perovskite Solar Cells

Konrad Wojciechowski; Tomas Leijtens; Svetlana Siprova; Christoph Schlueter; Maximilian T. Hörantner; Jacob Tse-Wei Wang; Chang-Zhi Li; Alex K.-Y. Jen; Tien-Lin Lee; Henry J. Snaith

Organic-inorganic halide perovskite solar cells have rapidly evolved over the last 3 years. There are still a number of issues and open questions related to the perovskite material, such as the phenomenon of anomalous hysteresis in current-voltage characteristics and long-term stability of the devices. In this work, we focus on the electron selective contact in the perovskite solar cells and physical processes occurring at that heterojunction. We developed efficient devices by replacing the commonly employed TiO2 compact layer with fullerene C60 in a regular n-i-p architecture. Detailed spectroscopic characterization allows us to present further insight into the nature of photocurrent hysteresis and charge extraction limitations arising at the n-type contact in a standard device. Furthermore, we show preliminary stability data of perovskite solar cells under working conditions, suggesting that an n-type organic charge collection layer can increase the long-term performance.


Nature Materials | 2008

Determining the aluminium occupancy on the active T-sites in zeolites using X-ray standing waves

Jeroen A. van Bokhoven; Tien-Lin Lee; Michael Drakopoulos; Carlo Lamberti; Sebastian Thieß; J. Zegenhagen

Zeolites are microporous crystalline materials that find wide application in industry, for example, as catalysts and gas separators, and in our daily life, for example, as adsorbents or as ion exchangers in laundry detergents. The tetrahedrally coordinated silicon and aluminium atoms in the zeolite unit cell occupy the so-called crystallographic T-sites. Besides their pore size, the occupation of specific T-sites by the aluminium atoms determines the performance of the zeolites. Despite its importance, the distribution of aluminium over the crystallographic T-sites remains one of the most challenging, unresolved issues in zeolite science. Here, we report how to determine unambiguously and directly the distribution of aluminium in zeolites by means of the X-ray standing wave technique using brilliant, focused X-rays from a third-generation synchrotron source. We report in detail the analysis of the aluminium distribution in scolecite, which demonstrates how the aluminium occupancy in zeolites can systematically be determined.


Advanced Materials | 2016

In Situ Control of Separate Electronic Phases on SrTiO3 Surfaces by Oxygen Dosing

L. Dudy; M. Sing; Philipp Scheiderer; Jonathan D. Denlinger; P. Schütz; Judith Gabel; Mathias Buchwald; Christoph Schlueter; Tien-Lin Lee; R. Claessen

Insulating SrTiO3 (STO) can host 2D electron systems (2DESs) on its surfaces, caused by oxygen defects. This study shows that the STO surface exhibits phase separation once the 2DES is formed and relates this inhomogeneity to recently reported magnetic order at STO surfaces and interfaces. The results open pathways to exploit oxygen defects for engineering the electronic and magnetic properties of oxides.


Physical Review Letters | 2016

Structural and Electronic Properties of Nitrogen-Doped Graphene

Jessica Sforzini; François C. Bocquet; Alexander Stöhr; Tien-Lin Lee; Serguei Soubatch; Frank Stefan Tautz; Martin Švec; Pavel Jelínek; Prokop Hapala; G. van Straaten; Markus Franke; U. Starke

We investigate the structural and electronic properties of nitrogen-doped epitaxial monolayer graphene and quasifreestanding monolayer graphene on 6H-SiC(0001) by the normal incidence x-ray standing wave technique and by angle-resolved photoelectron spectroscopy supported by density functional theory simulations. With the location of various nitrogen species uniquely identified, we observe that for the same doping procedure, the graphene support, consisting of substrate and interface, strongly influences the structural as well as the electronic properties of the resulting doped graphene layer. Compared to epitaxial graphene, quasifreestanding graphene is found to contain fewer nitrogen dopants. However, this lack of dopants is compensated by the proximity of nitrogen atoms at the interface that yield a similar number of charge carriers in graphene.


ACS Nano | 2014

Effect of Doping on Surface Reactivity and Conduction Mechanism in Samarium-Doped Ceria Thin Films

Nan Yang; Alex Belianinov; Evgheni Strelcov; A. Tebano; Vittorio Foglietti; Daniele Di Castro; Christoph Schlueter; Tien-Lin Lee; Arthur P. Baddorf; Nina Balke; Stephen Jesse; Sergei V. Kalinin; G. Balestrino; C. Aruta

A systematic study by reversible and hysteretic electrochemical strain microscopy (ESM) in samples of cerium oxide with different Sm content and in several working conditions allows disclosing the microscopic mechanism underlying the difference in electrical conduction mechanism and related surface activity, such as water adsorption and dissociation with subsequent proton liberation. We have measured the behavior of the reversible hysteresis loops by changing temperature and humidity, both in standard ESM configuration and using the first-order reversal curve method. The measurements have been performed in much smaller temperature ranges with respect to alternative measuring techniques. Complementing our study with hard X-ray photoemission spectroscopy and irreversible scanning probe measurements, we find that water incorporation is favored until the doping with Sm is too high to allow the presence of Ce3+. The influence of doping on the surface reactivity clearly emerges from all of our experimental results. We find that at lower Sm concentration, proton conduction is prevalent, featured by lower activation energy and higher electrical conductivity. Defect concentrations determine the type of the prevalent charge carrier in a doping dependent manner.


Applied Physics Letters | 2016

Surface degradation of Li1–xNi0.80Co0.15Al0.05O2 cathodes: Correlating charge transfer impedance with surface phase transformations

Shawn Sallis; Nathalie Pereira; Pinaki Mukherjee; Nicholas F. Quackenbush; Nicholas V. Faenza; Christoph Schlueter; Tien-Lin Lee; Wanli Yang; F. Cosandey; Glenn G. Amatucci; L. F. J. Piper

The pronounced capacity fade in Ni-rich layered oxide lithium ion battery cathodes observed when cycling above 4.1 V (versus Li/Li+) is associated with a rise in impedance, which is thought to be due to either bulk structural fatigue or surface reactions with the electrolyte (or combination of both). Here, we examine the surface reactions at electrochemically stressed Li1–xNi0.8Co0.15Al0.05O2 binder-free powder electrodes with a combination of electrochemical impedance spectroscopy, spatially resolving electron microscopy, and spatially averaging X-ray spectroscopy techniques. We circumvent issues associated with cycling by holding our electrodes at high states of charge (4.1 V, 4.5 V, and 4.75 V) for extended periods and correlate charge-transfer impedance rises observed at high voltages with surface modifications retained in the discharged state (2.7 V). The surface modifications involve significant cation migration (and disorder) along with Ni and Co reduction, and can occur even in the absence of sign...


ACS Nano | 2016

Structure and Growth of Hexagonal Boron Nitride on Ir(111)

Ferdinand Farwick zum Hagen; Domenik M. Zimmermann; Caio Silva; Christoph Schlueter; Nicolae Atodiresei; Wouter Jolie; Antonio J. Martínez-Galera; Daniela Dombrowski; Ulrike A. Schröder; Moritz Will; Predrag Lazić; Vasile Caciuc; Stefan Blügel; Tien-Lin Lee; Thomas Michely; Carsten Busse

Using the X-ray standing wave method, scanning tunneling microscopy, low energy electron diffraction, and density functional theory, we precisely determine the lateral and vertical structure of hexagonal boron nitride on Ir(111). The moiré superstructure leads to a periodic arrangement of strongly chemisorbed valleys in an otherwise rather flat, weakly physisorbed plane. The best commensurate approximation of the moiré unit cell is (12 × 12) boron nitride cells resting on (11 × 11) substrate cells, which is at variance with several earlier studies. We uncover the existence of two fundamentally different mechanisms of layer formation for hexagonal boron nitride, namely, nucleation and growth as opposed to network formation without nucleation. The different pathways are linked to different distributions of rotational domains, and the latter enables selection of a single orientation only.


Physical Review B | 2013

Interface reconstruction in superconducting CaCuO 2 /SrTiO 3 superlattices: A hard x-ray photoelectron spectroscopy study

C. Aruta; Christoph Schlueter; Tien-Lin Lee; Daniele Di Castro; Davide Innocenti; A. Tebano; J. Zegenhagen; G. Balestrino

Here we report on interface reconstruction in the recently discovered superconducting artificial superlattices based on insulating


Applied Physics Letters | 2016

Uniform second Li ion intercalation in solid state ϵ-LiVOPO4

Linda Wangoh; Shawn Sallis; Kamila M. Wiaderek; Yuh-Chieh Lin; Bohua Wen; Nicholas F. Quackenbush; Natasha A. Chernova; Jinghua Guo; Lu Ma; Tianpin Wu; Tien-Lin Lee; Christoph Schlueter; Shyue Ping Ong; Karena W. Chapman; M. Stanley Whittingham; L. F. J. Piper

{\mathrm{CaCuO}}_{2}


Physical Review B | 2017

Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy

P. Schütz; Dennis Valbjørn Christensen; Vladislav Borisov; F. Pfaff; Philipp Scheiderer; L. Dudy; M. Zapf; Judith Gabel; Yunzhong Chen; Nini Pryds; V. A. Rogalev; V. N. Strocov; Christoph Schlueter; Tien-Lin Lee; Harald O. Jeschke; Roser Valenti; M. Sing; R. Claessen

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J. Zegenhagen

European Synchrotron Radiation Facility

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C. Aruta

Instituto Politécnico Nacional

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Sebastian Thiess

European Synchrotron Radiation Facility

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Judith Gabel

University of Würzburg

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L. Dudy

University of Würzburg

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M. Sing

University of Würzburg

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R. Claessen

University of Würzburg

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A. Tebano

Instituto Politécnico Nacional

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M. Zapf

University of Würzburg

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