Tilmann Kuhn

Femtosecond spectroscopy in semiconductors: a key to coherences, correlations and quantum kinetics

The application of femtosecond spectroscopy to the study of ultrafast dynamics in semiconductor materials and nanostructures is reviewed with particular emphasis on the physics that can be learned from it. Excitation with ultrashort optical pulses in general results in the creation of coherent superpositions and correlated many-particle states. The review comprises a discussion of the dynamics of this correlated many-body system during and after pulsed excitation as well as its analysis by means of refined measurements and advanced theories. After an introduction of basic concepts—such as coherence, correlation and quantum kinetics—a brief overview of the most important experimental techniques and theoretical approaches is given. The remainder of this paper is devoted to specific results selected in order to highlight how femtosecond spectroscopy gives access to the physics of coherences, correlations and quantum kinetics involving charge, spin and lattice degrees of freedom.First examples deal with the dynamics of basic laser-induced coherences that can be observed, e.g. in quantum beat spectroscopy, in coherent control measurements or in experiments using few-cycle pulses. The phenomena discussed here are basic in the sense that they can be understood to a large extent on the mean-field level of the theory. Nevertheless, already on this level it is found that semiconductors behave substantially differently from atomic systems. Subsequent sections report on the occurrence of coherences and correlations beyond the mean-field level that are mediated either by carrier–phonon or carrier–carrier interactions. The corresponding analysis gives deep insight into fundamental issues such as the energy–time uncertainty, pure dephasing in quantum dot structures, the role of two-pair or even higher correlations and the build-up of screening. Finally results are presented concerning the ultrafast dynamics of resonantly coupled excitations, where a combination of different interaction mechanisms is involved in forming new types of correlations. Examples are coupled plasmon–phonon and Bloch–phonon oscillations.The results reviewed in this paper clearly reveal the central role of many-particle correlations and coherences for the ultrafast dynamics of dense semiconductor systems. Both the presence of strong correlation effects and the formation of coherences in a genuine many-particle system have important implications for the controllability of optical signals from this class of materials, which is of utmost importance for applications in present-day and future optoelectronic devices.

Nanomagnonic devices based on the spin-transfer torque

Magnonics is based on signal transmission and processing by spin waves (or their quanta, called magnons) propagating in a magnetic medium. In the same way as nanoplasmonics makes use of metallic nanostructures to confine and guide optical-frequency plasmon-polaritons, nanomagnonics uses nanoscale magnetic waveguides to control the propagation of spin waves. Recent advances in the physics of nanomagnetism, such as the discovery of spin-transfer torque, have created possibilities for nanomagnonics. In particular, it was recently demonstrated that nanocontact spin-torque devices can radiate spin waves, serving as local nanoscale sources of signals for magnonic applications. However, the integration of spin-torque sources with nanoscale magnetic waveguides, which is necessary for the implementation of integrated spin-torque magnonic circuits, has not been achieved to date. Here, we suggest and experimentally demonstrate a new approach to this integration, utilizing dipolar field-induced magnonic nanowaveguides. The waveguides exhibit good spectral matching with spin-torque nano-oscillators and enable efficient directional transmission of spin waves. Our results provide a practical route for the implementation of integrated magnonic circuits utilizing spin transfer.

Microscopic simulation of electronic noise in semiconductor materials and devices

We present a microscopic interpretation of electronic noise in semiconductor materials and two-terminal devices. The theory is based on Monte Carlo simulations of the carrier motion self-consistently coupled with a Poisson solver. Current and voltage noise operations are applied and their respective representations discussed. As application we consider the cases of homogeneous materials, resistors, n/sup +/nn/sup +/ structures, and Schottky-barrier diodes. Phenomena associated with coupling between fluctuations in carrier velocity and self-consistent electric field are quantitatively investigated for the first time. At increasing applied fields hot-carrier effects are found to be of relevant importance in all the cases considered here. As a general result, noise spectroscopy is found to be a source of valuable information to investigate and characterize transport properties of semiconductor materials and devices. >

Spatio-temporal dynamics of semiconductor lasers: Theory, modelling and analysis

Abstract The spatio-temporal dynamics of semiconductor lasers is studied theoretically on the basis of semiclassic laser theory. The carrier dynamics is described in a density-matrix approach and the coupled set of equations of motion for the active medium and the light field are derived. Several approximations related to separations of length and time scales are discussed, resulting in a hierarchy of model equations leading from microscopic to macroscopic levels of description. By numerically solving space-dependent coupled partial differential equations for the (complex) optical fields, the interband polarization and the charge carrier distribution functions on the various levels of the hierarchy the formation and longitudinal propagation of unstable transverse optical filamentary structures is analyzed in a model configuration for typical double-heterostructure multi-stripe and broad-area lasers. Spectral and spatial hole burning which is observed in the simulated carrier distributions reflects the interplay between stimulated emission and the relaxation dynamics of the carrier distributions as well as the polarization. Its details are strongly influenced by the momentum and density dependence of the microscopic relaxation rates. The transverse hole burning leads to complex spatio-temporal patterns in the macroscopic intensity picture. This complex spatio-temporal dynamic behavior in multi-stripe and broad-area lasers is analyzed by various theoretical tools which allows one to quantify the degree of complexity.

Coherent control of exciton density and spin

We demonstrate femtosecond coherent control of excitons in quantum wells with phase-locked pairs of 100 fs infrared pulses. Copolarized pump pulses allow coherent control of exciton density and coherent destruction of excitons within a few hundred femtoseconds of their creation. This technique thus promises to avoid speed penalties in devices associated with long-lived persistent carrier populations. Cross-polarized pump pulses allow coherent control of spin dynamics and conversion of unpolarized excitons into spin polarized ones. Carrier density and spin are determined, respectively, from the differential reflection and from the Faraday rotation of a third probe pulse. The experimental results are in good agreement with calculations based on the semiconductor Bloch equations.

Phonon-induced decoherence for a quantum-dot spin qubit operated by Raman passage

We study single-qubit gates performed via stimulated Raman adiabatic passage (STIRAP) on a spin qubit implemented in a quantum dot system in the presence of phonons. We analyze the interplay of various kinds of errors resulting from the carrier-phonon interaction as well as from quantum jumps related to nonadiabaticity and calculate the fidelity as a function of the pulse parameters. We give quantitative estimates for an InAs/GaAs system and identify the parameter values for which the error is considerably minimized, even to values below

Density matrix theory of coherent ultrafast dynamics

10^{-4}

Current and number fluctuations in submicron n+nn+ structures

per operation.

Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2

The carrier dynamics in semiconductor nanostructures on ultrashort timescales exhibits a variety of phenomena which cannot be understood on a semiclassi-cal level based completely on the particle aspect of the elementary excitations. Instead, these phenomena are at least partially related to the wave aspect and therefore a quantum-mechanical theory has to be used. Recently there have been mainly two different approaches used for the theoretical analysis of the ultrafast carrier dynamics in systems far from the thermodynamic equilibrium. These are the nonequilibrium Green’s function theory [1, 2, 3, 4] as discussed in Chapter 5 of this book and the density matrix theory [5, 6, 7, 8] which will be reviewed in this chapter. Both theories are quantum kinetic theories in the sense that the basic variables are some generalizations of the classical concept of a distribution function which may then be used to calculate expectation values of any observable quantity such as the electric current or polarization. This is in contrast to other approaches such as for example, the Kubo formalism [9] which are used in situations close to equilibrium where an expression directly for the desired observable is derived.

Reducing decoherence of the confined exciton state in a quantum dot by pulse-sequence control

Abstract We present a detailed analysis of current and number fluctuations in submicron n + nn + Si structures at different bias voltages and lengths of the active region. The calculation is carried out by coupling self-consistently a one-dimensional Poisson solver with a three-dimensional Ensemble Monte Carlo simulator. The coupling between fluctuations in carrier velocity and in the self-consistent field is found to be responsible for a negative part (a minimum) in the autocorrelation function of current fluctuations at equilibrium. The fluctuations of the carrier number in different slices and in the whole structure are influenced by space-charge effects and by the inhomogeneity of the structure. They are found to be a sensitive probe for characterizing different contact models. With increasing applied voltage the coupling between velocity and electric-field fluctuations weakens due to a less effective screening.