Tim Mewes

Advances and Future Prospects of Spin-Transfer Torque Random Access Memory

Spin-transfer torque random access memory (STT-RAM) is a potentially revolutionary universal memory technology that combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM, the non-volatility of Flash, and essentially unlimited endurance. In order to realize a small cell size, high speed and achieve a fully functional STT-RAM chip, the MgO-barrier magnetic tunnel junctions (MTJ) used as the core storage and readout element must meet a set of performance requirements on switching current density, voltage, magneto-resistance ratio (MR), resistance-area product (RA), thermal stability factor (¿) , switching current distribution, read resistance distribution and reliability. In this paper, we report the progress of our work on device design, material improvement, wafer processing, integration with CMOS, and testing for a demonstration STT-RAM test chip, and projections based on modeling of the future characteristics of STT-RAM.

Suppression of exchange bias by ion irradiation

The exchange bias effect in ferromagnetic/antiferromagnetic sandwich structures is generally believed to be sensitive on the interface exchange interaction, the magnetization, and the thickness of the ferromagnetic layer. Also the interface structure plays a crucial role. We show that, by irradiating samples with He ions, we can manipulate the exchange bias field in a controlled manner. Depending on the dose (1014–1017 ions/cm2) and the acceleration voltage (10–35 kV) of the ions, the shift of the hysteresis can be reduced or even fully suppressed. Potential applications of this effect for magnetic patterning on the nanoscale will be discussed.

Switching Distributions for Perpendicular Spin-Torque Devices Within the Macrospin Approximation

We model “soft” error rates for writing (WSER) and for reading (RSER) for spin-torque memory devices that have a free layer with easy axis perpendicular to the film plane by solving the Fokker-Planck equation for the probability distribution of the angle that the free layer magnetization makes with the normal to the plane of the film. We obtain: 1) an exact, closed form, analytical expression for the zero-temperature switching time as a function of initial angle; 2) an approximate analytical expression for the distribution function of the direction of the magnetization and the exponential decay of the WSER as a function of the time the current is applied; 3) comparison of the approximate analytical expressions for the distribution function and WSER to numerical solutions of the Fokker-Planck equation; 4) an approximate analytical expression for the distribution function and WSER for the case in which the pinned layer is not collinear with the perpendicular free layer; 5) an approximate analytical expression for the linear increase in RSER with current applied for reading; 6) comparison of the approximate analytical formula for the RSER to the numerical solution of the Fokker-Planck equation; and 7) confirmation of the accuracy of the Fokker-Planck solutions by comparison with results of direct simulation using the single-macrospin Landau-Lifshitz-Gilbert equations with a random fluctuating field in the short-time regime for which the latter is practical. We find that the WSER decays at long times as exp[-2(i-1)τ] where the reduced time τ is related to the switching time, Gilbert damping and precession frequency through τ = αω0t, and the reduced current i is the ratio of the applied current to the critical current density for switching i=I̅/I0 . This exponentially decaying tail in WSER is not easily reduced by tilting the pinned layer magnetization.

Oscillatory exchange bias effect in FeNi/Cu/FeMn and FeNi/Cr/FeMn trilayer systems

The first experimental observation of a spacer-thickness dependent oscillatory exchange bias effect in ferromagnet(FM)/spacer/antiferromagnet trilayers is reported. The period of the oscillatory exchange bias field is found to be half of the period of the oscillatory interlayer coupling in the corresponding FM/spacer/FM systems with the same spacer, indicating that the observed effect is caused by an analogous coupling mechanism, being, however, sensitive to the absolute value of the coupling strength and not on its sign.

Origin of low Gilbert damping in half metals

Using a combination of first-principles calculations and an extended Huckel tight binding model this letter reports on the origin of the low Gilbert damping in half metals. This approach enables the prediction of the lower limit for the magnetization relaxation in a wide variety of material systems relevant for future spintronic applications. For the two model systems Co2MnGe and Co2MnSi minimal damping parameters of 1.9×10−4 and 0.6×10−4 are predicted.

Spin pumping in Co56Fe24B20 multilayer systems

Broadband in-plane ferromagnetic resonance measurements were performed over a frequency range from 7 to 40 GHz on various Co56Fe24B20 systems with adjacent thin non-magnetic layers of Ru, Ta and Cu. Co56Fe24B20 samples bounded by either Ru or Ta layers exhibit a contribution to the Gilbert damping constant inversely proportional to the thickness of the Co56Fe24B20 layer, consistent with spin-pumping theory. In contrast, samples with 20 nm thick Cu bounding layers did not show a significant dependence of the Gilbert damping constant on the Co56Fe24B20 thickness, which can be understood based on the far larger spin diffusion length of Cu in comparison with Ru or Ta.

Interfacial perpendicular magnetic anisotropy and damping parameter in ultra thin Co2FeAl films

B2-ordered Co2FeAl films were synthesized using an ion beam deposition tool. A high degree of chemical ordering ∼81.2% with a low damping parameter (α) less than 0.004 was obtained in a 50 nm thick film via rapid thermal annealing at 600 °C. The perpendicular magnetic anisotropy (PMA) was optimized in ultra thin Co2FeAl films annealed at 350 °C without an external magnetic field. The reduced thickness and annealing temperature to achieve PMA introduced extrinsic factors thus increasing α significantly. However, the observed damping of Co2FeAl films was still lower than that of Co60Fe20B20 films prepared at the same thickness and annealing temperature.

Magnetization relaxation and structure of CoFeGe alloys

The magnetic relaxation of 10 and 50 nm thin films of (CoFe)100−xGex (0 at. %≤x≤35 at. %) alloys was investigated by broadband ferromagnetic resonance (FMR) experiments. 10 nm thin films exhibit a significant two magnon contribution to the FMR linewidth. The 50 nm films exhibit very low damping constants of α≈0.0025 and relaxation rates as low as 33 MHz in the composition range of 20 at. %≤x≤30 at. % Ge after annealing. Structural characterization revealed B2 order for these compositions. First principles calculations confirm a pseudogap in the minority channel for B2 ordered (CoFe)75Ge25 which may cause the low damping parameters and high ΔRA in CoFeGe based current perpendicular to the plane giant magnetoresistance spin valves.

Enhanced coercivity of exchange-bias Fe/MnPd bilayers

We present detailed studies of the enhanced coercivity of exchange-bias bilayer Fe/MnPd, both experimentally and theoretically. We have demonstrated that the existence of large higher-order anisotropies due to exchange coupling between different Fe and MnPd layers can account for the large increase of coercivity in the Fe/MnPd system. The linear dependence of coercivity on inverse Fe thickness is well explained by a phenomenological model by introducing higher-order anisotropy terms into the total free energy of the system.

Influence of capping layers on CoFeB anisotropy and damping

Magnetic behavior of CoFeB at various thicknesses ranging from 2 nm to 8 nm capped with different materials, such as MgO, Ta, Ru, and V have been studied. The films were sputter-deposited and subsequently characterized by magnetometry and broadband ferromagnetic resonance (FMR). There are magnetically dead layers at the interface observed with Ru and Ta capping layers, while MgO and V have almost no effect on the magnetization of the CoFeB. As the ferromagnetic layer is made thinner, the effective magnetization decreases, indicating an interfacial perpendicular anisotropy. Particularly in the case of MgO, V/Ru, and V/Ta capping layers, interfacial perpendicular anisotropy is induced in CoFeB, and the Gilbert damping parameter is also reduced. The origin of this perpendicular magnetic anisotropy (PMA) is understood to be caused by the interface anisotropy between the free layer and the capping layer. The effect of post-deposition annealing and CoFeB thickness on the anisotropy and damping of V/Ta capped sa...