Timo Müller

Influence of Cu Concentration on the Getter Efficiency of Dislocations and Oxygen Precipitates in Silicon Wafers

Two getter tests were carried out in order to study the getter efficiency of oxygen precipitates in silicon samples contaminated with low and high Cu concentration. The samples were pre-treated by RTA followed by annealing in the temperature range between 700 °C and 1000 °C for various times in order to establish different concentrations and different sizes of oxygen precipitates in the samples. From the analysis of the results of the normalized inner surface and the gettering efficiency, it was deduced that in highly contaminated samples Cu precipitates more easily at dislocations than at the surface of oxygen precipitates. Contrarily, in the samples contaminated with low Cu concentration the presence of dislocations does not improve the getter efficiency. Cu precipitates were found at the edge of a plate-like precipitate in a sample with low Cu concentration.

Internal Gettering of Copper for Microelectronic Applications

The results of this work have shown that for microelectronic applications, gettering at dislocations is less important and oxygen precipitates are the main getter sink for Cu. Sufficient gettering of Cu in samples contaminated with low Cu concentration requires a higher density and larger oxygen precipitates compared to samples contaminated with high Cu concentration. It is demonstrated that the getter efficiency depends on the contamination level of the samples and getter test with low contamination level must be applied for microelectronic applications. Furthermore, a getter test for 3D chip stack technologies was developed. It was shown that although the wafers are thinned to a thickness of 50 μm their getter efficiency seems to be higher than for wafers of the original thickness. This is assumed to be due to the higher Cu concentration in the thinner wafers which can be gettered easier. It is also demonstrated that BMDs can getter Cu impurities even if the temperature does not exceed 300 °C. The getter efficiency tends to be higher if the samples are stored under day light and not in the dark.

Coupling of Mold Flow Simulations with Two-Scale Structural Mechanical Simulations for Long Fiber Reinforced Thermoplastics

The entire simulation process for long fiber reinforced thermoplastics is examined to determine the effective mechanical properties which are influenced by the microstructural fiber orientation state. Therefore, flow and fiber orientation simulations are conducted and the obtained fiber orientation tensors are used in two-scale structural simulations. The fiber orientation distributions as well as the mechanical properties are compared with micro-computed tomography data and results from threepoint bending tests performed by dynamical mechanical analysis (DMA), respectively. The validated results show that prediction of the essential mechanical properties is possible with the applied combinated methods and that the knowledge of the fiber orientation and its gradients is of crucial importance for the entire simulation process.

Design concept of a lightweight electric motor casing with support from thermomechanical simulations

Electric and hybrid electric vehicles and lightweight components are important issues for the automotive industry in the pursuit for the reduction of carbon emissions. In this study, a fibre-reinforced polymer (FRP) casing for a high-power electric motor was designed, with focus on the cooling system effectiveness. Heat transfer simulations were performed to prove the effectiveness of different proposed cooling systems. A design concept using the selected cooling system and 30 wt% glass fibre-reinforced polyamide-6 as the material for the casing was submitted to a thermomechanical analysis. Results show a maximum temperature of 105°C in the casing and stresses well within the limits of the material. For this material, the design concept shows a potential for ~65% weight reduction. The possibility of using other FRPs is also briefly discussed.

Impact of RTA on the Morphology of Oxygen Precipitates and on the Getter Efficiency for Cu and Ni in Si Wafers

The influence of RTA pre-treatments on the morphology of oxygen precipitates in silicon wafers as deduced from haze getter tests was confirmed by FTIR and TEM investigations. Based on the results of the getter tests, the ratio between the density of plate-like and octahedral precipitates was calculated for RTA pre-treated silicon samples.

Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities

An internally gettering bulk defect zone and a defect denuded zone of at least 5 µm below the wafer surface were generated by out-diffusion of interstitial oxygen during annealing at temperatures in the range 1075-1100 °C in argon atmosphere. The CZ silicon material used was optimized with respect to voids and contained a central OSF region and an outer Pv region. Due to co-doping of at least 3×1013 cm-3 nitrogen, a laterally homogeneous bulk microdefect density was obtained which is independent of the temperature of the out-diffusion anneal. The internal getter created in this way efficiently getters nickel impurities as demonstrated in a getter test with 6.6×1011 cm-3 of intentional Ni contamination. In the central OSF region of the as-grown nitrogen co-doped wafers, the nuclei capable of generating OSFs also degrade the gate oxide integrity. Out-diffusion annealing at 1075-1100°C dissolves most of the defects capable of generating OSFs and it strongly improves the integrity of 5 nm gate oxides.