Timothy H. Vo
University of Nebraska–Lincoln
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Featured researches published by Timothy H. Vo.
Nano Letters | 2015
Timothy H. Vo; U. Gayani E. Perera; Mikhail Shekhirev; Mohammad Mehdi Pour; Donna A. Kunkel; Haidong Lu; Alexei Gruverman; Eli Sutter; Mircea Cotlet; Dmytro Nykypanchuk; Percy Zahl; Axel Enders; Alexander Sinitskii; Peter Sutter
Narrow graphene nanoribbons (GNRs) constructed by atomically precise bottom-up synthesis from molecular precursors have attracted significant interest as promising materials for nanoelectronics. But there has been little awareness of the potential of GNRs to serve as nanoscale building blocks of novel materials. Here we show that the substitutional doping with nitrogen atoms can trigger the hierarchical self-assembly of GNRs into ordered metamaterials. We use GNRs doped with eight N atoms per unit cell and their undoped analogues, synthesized using both surface-assisted and solution approaches, to study this self-assembly on a support and in an unrestricted three-dimensional (3D) solution environment. On a surface, N-doping mediates the formation of hydrogen-bonded GNR sheets. In solution, sheets of side-by-side coordinated GNRs can in turn assemble via van der Waals and π-stacking interactions into 3D stacks, a process that ultimately produces macroscopic crystalline structures. The optoelectronic properties of these semiconducting GNR crystals are determined entirely by those of the individual nanoscale constituents, which are tunable by varying their width, edge orientation, termination, and so forth. The atomically precise bottom-up synthesis of bulk quantities of basic nanoribbon units and their subsequent self-assembly into crystalline structures suggests that the rapidly developing toolset of organic and polymer chemistry can be harnessed to realize families of novel carbon-based materials with engineered properties.
Nano Letters | 2017
Adrian Radocea; Tao Sun; Timothy H. Vo; Alexander Sinitskii; N. R. Aluru; Joseph W. Lyding
There has been tremendous progress in designing and synthesizing graphene nanoribbons (GNRs). The ability to control the width, edge structure, and dopant level with atomic precision has created a large class of accessible electronic landscapes for use in logic applications. One of the major limitations preventing the realization of GNR devices is the difficulty of transferring GNRs onto nonmetallic substrates. In this work, we developed a new approach for clean deposition of solution-synthesized atomically precise chevron GNRs onto H:Si(100) under ultrahigh vacuum. A clean transfer allowed ultrahigh-vacuum scanning tunneling microscopy (STM) to provide high-resolution imaging and spectroscopy and reveal details of the electronic structure of chevron nanoribbons that have not been previously reported. We also demonstrate STM nanomanipulation of GNRs, characterization of multilayer GNR cross-junctions, and STM nanolithography for local depassivation of H:Si(100), which allowed us to probe GNR-Si interactions and revealed a semiconducting-to-metallic transition. The results of STM measurements were shown to be in good agreement with first-principles computational modeling.
ACS Applied Materials & Interfaces | 2017
Mikhail Shekhirev; Timothy H. Vo; Mohammad Mehdi Pour; Alexey Lipatov; Siddhanth Munukutla; Joseph W. Lyding; Alexander Sinitskii
Because of their intriguing electronic and optical properties, atomically precise graphene nanoribbons (GNRs) are considered to be promising materials for electronics and photovoltaics. However, significant aggregation and low solubility of GNRs in conventional solvents result in their poor processability for materials characterization and device studies. In this paper, we demonstrate a new fabrication approach for large-scale uniform thin films of nonfunctionalized atomically precise chevron-type GNRs. The method is based on (1) the exceptional solubility of graphitic materials in chlorosulfonic acid and (2) the original interfacial self-assembly approach by which uniform films that are single-GNR (∼2 nm) thick can be routinely prepared. These films can be transferred to various substrates including Si/SiO2 and used for the streamlined fabrication of arrays of GNR-based devices. The described self-assembly approach should be applicable to other types of solution-synthesized atomically precise GNRs as well as large polyaromatic hydrocarbon (PAH) molecules and therefore should facilitate and streamline their device characterization.
RSC Advances | 2017
Mikhail Shekhirev; Timothy H. Vo; Donna A. Kunkel; Alexey Lipatov; Axel Enders; Alexander Sinitskii
Solution bottom-up approaches can be used to prepare bulk quantities of narrow atomically precise graphene nanoribbons (GNRs) with various widths and geometries. These GNRs are often considered as promising materials for electronic and optoelectronic applications. However, the handling and processing of nanoribbons for practical applications can be difficult because of their entanglement and aggregation, and thus poor solubility in conventional solvents. In this work, we studied the aggregation-dependent properties of solution-synthesized chevron GNRs in a variety of solvents. We demonstrate that the spectroscopic features observed in the experimentally measured absorbance spectra of chevron GNRs are in a good agreement with the theoretically predicted excitionic transitions. We also show that the absorbance spectra of GNRs evolve with aggregation time, which is important to consider for the spectroscopic determination of optical bandgaps of nanoribbons. We discuss two types of GNR assemblies: bulk aggregates of π–π stacked nanoribbons that form in a solution and rather long one-dimensional (1D) structures that were observed on a variety of surfaces, such as Au(111), mica and Si/SiO2. We demonstrate that the few-μm-long 1D GNR structures can be conveniently visualized by conventional microscopy techniques and used for the fabrication of electronic devices.
Nature Communications | 2014
Timothy H. Vo; Mikhail Shekhirev; Donna A. Kunkel; Martha D. Morton; Eric J. Berglund; Lingmei Kong; Peter M. Wilson; Peter A. Dowben; Axel Enders; Alexander Sinitskii
Faraday Discussions | 2014
Timothy H. Vo; Mikhail Shekhirev; Alexey Lipatov; Rafał Korlacki; Alexander Sinitskii
Advanced electronic materials | 2017
Alexey Lipatov; Alexandra Fursina; Timothy H. Vo; Pankaj Sharma; Alexei Gruverman; Alexander Sinitskii
Chemistry of Materials | 2015
Alexey Lipatov; Benjamin B. Wymore; Alexandra Fursina; Timothy H. Vo; Alexander Sinitskii; Jody G. Redepenning
Nanoscale | 2017
Jacob D. Teeter; Paulo S. Costa; Percy Zahl; Timothy H. Vo; Mikhail Shekhirev; Wenwu Xu; Xiao Cheng Zeng; Axel Enders; Alexander Sinitskii
Bulletin of the American Physical Society | 2016
Adrian Radocea; Mohammad Mehdi Pour; Timothy H. Vo; Mikhail Shekhirev; Alexander Sinitskii; Joseph W. Lyding