Tokuyuki Teraji

Multiple intrinsically identical single-photon emitters in the solid state

Emitters of indistinguishable single photons are crucial for the growing field of quantum technologies. To realize scalability and increase the complexity of quantum optics technologies, multiple independent yet identical single-photon emitters are required. However, typical solid-state single-photon sources are inherently dissimilar, necessitating the use of electrical feedback or optical cavities to improve spectral overlap between distinct emitters. Here we demonstrate bright silicon vacancy (SiV(-)) centres in low-strain bulk diamond, which show spectral overlap of up to 91% and nearly transform-limited excitation linewidths. This is the first time that distinct single-photon emitters in the solid state have shown intrinsically identical spectral properties. Our results have impact on the application of single-photon sources for quantum optics and cryptography.

Extreme dielectric strength in boron doped homoepitaxial diamond

The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concentration below 10(16) cm(-3) in the first micrometers of an epitaxial film with optimized crystalline quality and a special oxidizing treatment of its surface, allowing the true dielectric strength of bulk diamond to be revealed.

Electronic structure of the negatively charged silicon-vacancy center in diamond

The negatively-charged silicon-vacancy (SiV

All-Optical Initialization, Readout, and Coherent Preparation of Single Silicon-Vacancy Spins in Diamond

^-

Appearance of N-type semiconducting properties of cBN single crystals grown at high pressure

) center in diamond is a promising single photon source for quantum communications and information processing. However, the centers implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a

Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces

\langle111\rangle

Experimental Implementation of Assisted Quantum Adiabatic Passage in a Single Spin

aligned split-vacancy structure with

Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment

D_{3d}

Extending spin coherence times of diamond qubits by high-temperature annealing

symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the centers 738 nm optical resonance.

Ideal Ohmic contact to n-type 6H-SiC by reduction of Schottky barrier height

The silicon-vacancy (SiV-) color center in diamond has attracted attention because of its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show optical initialization and readout of electronic spin in a single SiV- center with a spin relaxation time of T1=2.4±0.2  ms. Coherent population trapping (CPT) is used to demonstrate coherent preparation of dark superposition states with a spin coherence time of T2⋆=35±3  ns. This is fundamentally limited by orbital relaxation, and an understanding of this process opens the way to extend coherence by engineering interactions with phonons. Hyperfine structure is observed in CPT measurements with the 29Si isotope which allows access to nuclear spin. These results establish the SiV- center as a solid-state spin-photon interface.