Tomas Sluka

Enhanced electromechanical response of ferroelectrics due to charged domain walls

While commonly used piezoelectric materials contain lead, non-hazardous, high-performance piezoelectrics are yet to be discovered. Charged domain walls in ferroelectrics are considered inactive with regards to the piezoelectric response and, therefore, are largely ignored in this search. Here we demonstrate a mechanism that leads to a strong enhancement of the dielectric and piezoelectric properties in ferroelectrics with increasing density of charged domain walls. We show that an incomplete compensation of bound polarization charge at these walls creates a stable built-in depolarizing field across each domain leading to increased electromechanical response. Our model clarifies a long-standing unexplained effect of domain wall density on macroscopic properties of domain-engineered ferroelectrics. We show that non-toxic ferroelectrics like BaTiO3 with dense patterns of charged domain walls are expected to have strongly enhanced piezoelectric properties, thus suggesting a new route to high-performance, lead-free ferroelectrics.

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another possibility exists whereby the concentration of charge carriers is modified using polarization charge as a quasi-dopant, which implies the possibility to write, displace, erase and re-create channels having a metallic-type conductivity inside a wide-bandgap semiconductor matrix. Polarization-charge doping is achieved in ferroelectrics by the creation of charged domain walls. The intentional creation of stable charged domain walls has so far only been reported in BaTiO3 single crystals, with a process that involves cooling the material through its phase transition under a strong electric bias, but this is not a viable technology when real-time reconfigurability is sought in working devices. Here, we demonstrate a technique allowing the creation and nanoscale manipulation of charged domain walls and their action as a real-time doping activator in ferroelectric thin films. Stable individual and multiple conductive channels with various lengths from 3 μm to 100 nm were created, erased and recreated in another location, and their high metallic-type conductivity was verified. This takes the idea of hardware reconfigurable electronics one step forward.

Controlled stripes of ultrafine ferroelectric domains

In the pursuit of ferroic-based (nano)electronics, it is essential to minutely control domain patterns and domain switching. The ability to control domain width, orientation and position is a prerequisite for circuitry based on fine domains. Here, we develop the underlying theory towards growth of ultra-fine domain patterns, substantiate the theory by numerical modelling of practical situations and implement the gained understanding using the most widely applied ferroelectric, Pb(Zr,Ti)O3, demonstrating controlled stripes of 10 nm wide domains that extend in one direction along tens of micrometres. The observed electrical conductivity along these thin domains embedded in the otherwise insulating film confirms their potential for electronic applications.

Formation of charged ferroelectric domain walls with controlled periodicity

Charged domain walls in proper ferroelectrics were shown recently to possess metallic-like conductivity. Unlike conventional heterointerfaces, these walls can be displaced inside a dielectric by an electric field, which is of interest for future electronic circuitry. In addition, theory predicts that charged domain walls may influence the electromechanical response of ferroelectrics, with strong enhancement upon increased charged domain wall density. The existence of charged domain walls in proper ferroelectrics is disfavoured by their high formation energy and methods of their preparation in predefined patterns are unknown. Here we develop the theoretical background for the formation of charged domain walls in proper ferroelectrics using energy considerations and outline favourable conditions for their engineering. We experimentally demonstrate, in BaTiO3 single crystals the controlled build-up of high density charged domain wall patterns, down to a spacing of 7 μm with a predominant mixed electronic and ionic screening scenario, hinting to a possible exploitation of charged domain walls in agile electronics and sensing devices.

Adaptive vibration suppression system: an iterative control law for a piezoelectric actuator shunted by a negative capacitor

An adaptive system for the suppression of vibration transmission using a single piezoelectric actuator shunted by a negative capacitance circuit is presented. It is known that by using a negative-capacitance shunt, the spring constant of a piezoelectric actuator can be controlled to extreme values of zero or infinity. Because the value of spring constant controls a force transmitted through an elastic element, it is possible to achieve a reduction of transmissibility of vibrations through the use of a piezoelectric actuator by reducing its effective spring constant. Narrow frequency range and broad frequency range vibration isolation systems are analyzed, modeled, and experimentally investigated. The problem of high sensitivity of the vibration control system to varying operational conditions is resolved by applying an adaptive control to the circuit parameters of the negative capacitor. A control law that is based on the estimation of the value of the effective spring constant of a shunted piezoelectric actuator is presented. An adaptive system which achieves a self-adjustment of the negative capacitor parameters is presented. It is shown that such an arrangement allows the design of a simple electronic system which offers a great vibration isolation efficiency under variable vibration conditions.

Negative-pressure-induced enhancement in a freestanding ferroelectric.

Ferroelectrics are widespread in technology, being used in electronics and communications, medical diagnostics and industrial automation. However, extension of their operational temperature range and useful properties is desired. Recent developments have exploited ultrathin epitaxial films on lattice-mismatched substrates, imposing tensile or compressive biaxial strain, to enhance ferroelectric properties. Much larger hydrostatic compression can be achieved by diamond anvil cells, but hydrostatic tensile stress is regarded as unachievable. Theory and ab initio treatments predict enhanced properties for perovskite ferroelectrics under hydrostatic tensile stress. Here we report negative-pressure-driven enhancement of the tetragonality, Curie temperature and spontaneous polarization in freestanding PbTiO3 nanowires, driven by stress that develops during transformation of the material from a lower-density crystal structure to the perovskite phase. This study suggests a simple route to obtain negative pressure in other materials, potentially extending their exploitable properties beyond their present levels.

Feedback Control of Piezoelectric Actuator Elastic Properties in a Vibration Isolation System

The design of a vibration isolation system utilizing a method to control the effective elastic stiffness of piezoelectric materials has been realized. The vibration isolation system consists of a piezoelectric actuator and an active analog circuit with an operational amplifier. The problem of a low stability of this system is analyzed and the method for the automatic stabilization and adjustment of the analog circuit by an additional feedback control is introduced. The impact of the proposed method on the transmissibility of vibrations through the vibration isolation system is experimentally verified on a preliminary device. It is shown that using the proposed method, it is possible to decrease the transmissibility of vibrations by an additional 20 dB compared to the transmissibility values achieved by a manual adjustment of the analog circuitry.

Sound shielding by a piezoelectric membrane and a negative capacitor with feedback control

The design and realization of an adaptive sound-shielding system based on a method to control the effective elastic stiffness of piezoelectric materials are presented in this paper. In this system, the sound-shielding effect is achieved by a sound reflection from the piezoelectric curved membrane fixed in rigid frame and connected to an active analog circuit that behaves as a negative capacitor. The acoustic transmission loss through the curved membrane was measured for the incident sound of frequency 1.6 kHz and of acoustic pressure level 80 dB. When the negative capacitor in the system was properly adjusted, the acoustic pressure level of the transmitted sound was reduced from the initial 60 dB to 15 dB by the action of the negative capacitor. Then the system was exposed to naturally changing operational conditions, and their effect on sound-shielding efficiency was studied. It is shown that the acoustic transmission loss of the system dropped by 35 dB within 30 min from the moment of negative capacitor adjustment. Therefore, a self-adjustment of the system has been implemented by appending an additional digital control circuit to the negative capacitor. It is shown that the aforementioned deteriorating effect has been eliminated by the adjusting action of the control circuit. The long-time sustainable value of 60 dB in the acoustic transmission loss of the adaptive sound shielding system has been achieved.

Free-Carrier-Compensated Charged Domain Walls Produced with Super-Bandgap Illumination in Insulating Ferroelectrics

Charged domain walls in ferroelectrics are movable and electronically conducting interfaces inside insulating materials. A simple and reliable method for their artificial production with ultraviolet (UV) light is described. The UV illumination produces free carriers in ferroelectric bulk, which simultaneously promotes the formation of charged domain walls and provides charge for their compensation.

Néel-like domain walls in ferroelectric Pb(Zr,Ti)O 3 single crystals

In contrast to the flexible rotation of magnetization direction in ferromagnets, the spontaneous polarization in ferroelectric materials is highly confined along the symmetry-allowed directions. Accordingly, chirality at ferroelectric domain walls was treated only at the theoretical level and its real appearance is still a mystery. Here we report a Néel-like domain wall imaged by atom-resolved transmission electron microscopy in Ti-rich ferroelectric Pb(Zr1−xTix)O3 crystals, where nanometre-scale monoclinic order coexists with the tetragonal order. The formation of such domain walls is interpreted in the light of polarization discontinuity and clamping effects at phase boundaries between the nesting domains. Phase-field simulation confirms that the coexistence of both phases as encountered near the morphotropic phase boundary promotes the polarization to rotate in a continuous manner. Our results provide a further insight into the complex domain configuration in ferroelectrics, and establish a foundation towards exploring chiral domain walls in ferroelectrics.