Tommie Ray Huffman

Control of diffusion induced dislocations in phosphorus diffused silicon

Abstract Control of surface diffusant density is shown to limit phosphorus diffusion induced dislocations in silicon. By minimizing the diffusant density, it is possible to eliminate electrically inactive phosphorus in addition to the diffusion induced dislocations, while also achieving impurity profiles which closely approximate the error function complement. Correlations are made between the type of diffused impurity profile, the inactive phosphorus content and the number of diffusion induced dislocations. The impurity level at which dislocations begin to appear is also discussed.