Tommie W. Kelley
University of Minnesota
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Featured researches published by Tommie W. Kelley.
MRS Proceedings | 2003
Tommie W. Kelley; Dawn V. Muyres; Paul F. Baude; Terry P. Smith; Todd D. Jones
We report here methods of surface modification and device construction which consistently result in lab-scale pentacene-based TFTs with mobilities at or above 5 cm 2 /Vs. Surface modifications include polymeric ultrathin films presenting a passivated interface on which the semiconductor can grow. High performance TFTs have been fabricated on a variety of dielectric materials, both organic and inorganic, and are currently being implemented in manufacturable constructions. Our surface modifications have also proven useful for substituted pentacene materials and for a variety of other organic semiconductors. In addition, we report an all organic active layer, rf-powered integrated circuit. Further experiments and statistical analyses are underway to explain the elevated mobility in our samples, and efforts have been made to confirm these results through collaboration.
Journal of Vacuum Science & Technology B | 2000
Tommie W. Kelley; C. Daniel Frisbie
Conducting probe atomic force microscopy (CP-AFM) was used to make point contact current–voltage (I–V) measurements on individual microscopic grains of the organic semiconductor sexithiophene (6T). The 6T grains ranged from 1 to 6 molecules (2–14 nm) in thickness, 1–2 μm in length and width, and were deposited by thermal evaporation onto SiO2 substrates previously patterned with 200 nm wide Au wires. Au-coated AFM probes were used to image the substrates in air to identify individual 6T grains which grew in contact with a wire. The same probes were used to record the I–V characteristics of single grains. Analysis of the differential resistance as a function of probe wire separation yielded typical grain resistivities of 100 Ω cm and contact resistances of ∼100 MΩ. Over the 0–3 V range probed, the shape of the I–V curves can be attributed to a combination of the nonlinear I–V characteristics of the Au-6T junctions and the ohmic response of the grain. In general, we have shown that CP-AFM is a reliable meth...
Journal of Vacuum Science and Technology | 2004
Dawn V. Muyres; Paul F. Baude; Steven D. Theiss; Michael A. Haase; Tommie W. Kelley; Patrick R. Fleming
The use of polymeric aperture masks to fabricate high performance pentacene-based integrated circuits is presented. The aperture masks are fabricated using a laser ablation process with capabilities of generating 10 μm features. A mask set consisting of 4–6 aligned layers has been fabricated and has been used to demonstrate functional rf-powered integrated circuits with 20 μm gate lengths. Devices consisted of shadow-mask patterned layers of gold, alumina, and pentacene. TFT mobilities greater than 2 cm2/V s were measured and propagation delays from 7-stage ring oscillators of less than 5 μs were observed. This all-additive, dry patterning method has been extended to the production of samples as large as 6 in.×6 in. Larger aperture masks are under investigation and continuing efforts are focused on automation of the alignment process.
SID Symposium Digest of Technical Papers | 2004
Tommie W. Kelley; Paul F. Baude; David A. Ender; Chris Gerlach; Michael A. Haase; Dawn V. Muyres; Steven D. Theiss; Dennis E. Vogel
Recent efforts at 3M have extended the use of polymeric aperture masks and surface modification methods to produce large area (approximately 6″×6″) arrays of high mobility pentacene TFTs on a variety of substrates. Results of high performance organic TFTs in active matrix display backplanes will be presented.
Molecular Simulation | 2004
Cristina U. Thomas; Gregg Alexander Caldwell; Sanat Mohanty; Tommie W. Kelley; Dennis E. Vogel
Nanosystems represent new opportunities, new research and development efforts and new possibilities for advanced materials. Many industrial scientists are focusing on nanotechnology and many chemical industries are indeed funding ambitious but valuable efforts. These efforts are based on the belief and realization that nanosystems are basic and important blocks for building new businesses. Industrial computational experts find themselves at the right intersect: an intersect where their technology is uniquely capable to access understanding, to stimulate thoughts and possibilities, to run “what-if” scenarios, and to “truly” discover new nanosystems capable of providing the advanced material capability that future businesses foresee. This paper will focus on describing computational methodologies that we are currently using. The paper will also extend to cover the application of these methods to aromatics, in particular, pentacenes and benzene derivatives.
Chemistry of Materials | 2004
Tommie W. Kelley; Paul F. Baude; Chris Gerlach; David E. Ender; Dawn V. Muyres; Michael A. Haase; Dennis E. Vogel; Steven D. Theiss
Journal of Physical Chemistry B | 2003
Tommie W. Kelley; Larry D. Boardman; Timothy D. Dunbar; Dawn V. Muyres; and Mark J. Pellerite; Terry P. Smith
Journal of Physical Chemistry B | 2005
Sandra E. Fritz; Tommie W. Kelley; C. Daniel Frisbie
Journal of the American Chemical Society | 2005
Jeffrey A. Merlo; Christopher R. Newman; Christopher P. Gerlach; Tommie W. Kelley; Dawn V. Muyres; Sandra E. Fritz; Michael F. Toney; C. Daniel Frisbie
Archive | 2003
Paul F. Baude; Patrick R. Fleming; Michael A. Haase; Tommie W. Kelley; Dawn V. Muyres; Steven D. Theiss