Tomofumi Yamamuro

Impact of Mixture Gas Plasma of N2 and O2 as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy

ZnO-based double-heterostructure ultraviolet light-emitting diodes (LEDs) were fabricated on n-type Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy employing mixture gas plasma of N2 and O2 as the N source. By using mixture gas plasma of N2 with a little added O2, the number of N atoms increased and N2 molecules decreased, as confirmed by optical emission spectrometry. The fabricated LEDs had an ultraviolet near-band-emission of around 380 nm. The integrated electroluminescence intensity of the LED fabricated using N2 and O2 plasma was more than 10 times higher than that of an LED fabricated using N2 plasma.