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Dive into the research topics where Tomoki Ogawa is active.

Publication


Featured researches published by Tomoki Ogawa.


2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) | 2017

Electrical conduction of Si/ITO/Si junctions fabricated by surface activated bonding

Jianbo Liang; Tomoki Ogawa; Kenji Araki; Takefumi Kamioka; Naoteru Shigekawa

The electrical properties of n-Si/ITO/n-Si, n-Si/ITO/p-Si, and p-Si/ITO/n-Si junctions fabricated by surface activated bonding (SAB) were investigated. The current-voltage (I-V) characteristics of n-Si/ITO/n-Si, n-Si/ITO/p-Si, and p-Si/ITO/n-Si junctions showed excellent linearity. The interface resistance of n-Si/ITO/p-Si junctions was found to be 0.0249 O·cm2, which is the smallest value observed in all the samples.


international meeting for future of electron devices, kansai | 2016

Effects of layered CdTe nano particles on Si solar cells

Tomoki Ogawa; Jianbo Liang; S. Imasaki; T. Watanabe; DaeGwi Kim; Naoteru Shigekawa

Layered CdTe nanoparticles were deposited on surfaces of n-on-p crystalline Si solar cells. Their short-circuit current and conversion efficiency were enhanced due to the nanoparticle deposition. Measurements of reflectance and external-quantum-efficiency spectra as well as atomic-force-microscope observations implied that the enhancements in cell performances were attributable to textured structures of the deposited nanoparticle layers.


Japanese Journal of Applied Physics | 2018

Electrical properties of GaAs//indium tin oxide/Si junctions for III–V-on-Si hybrid multijunction cells

Tomoya Hara; Tomoki Ogawa; Jianbo Liang; Kenji Araki; Takefumi Kamioka; Naoteru Shigekawa


Japanese Journal of Applied Physics | 2018

Electrical conduction of Si/indium tin oxide/Si junctions fabricated by surface activated bonding

Jianbo Liang; Tomoki Ogawa; Tomoya Hara; Kenji Araki; Takefumi Kamioka; Naoteru Shigekawa


IEEE Journal of Photovoltaics | 2018

GaAs/Indium Tin Oxide/Si Bonding Junctions for III-V-on-Si Hybrid Multijunction Cells With Low Series Resistance

Naoteru Shigekawa; Tomoya Hara; Tomoki Ogawa; Jianbo Liang; Takefumi Kamioka; Kenji Araki; Masafumi Yamaguchi


The Japan Society of Applied Physics | 2017

Annealing effects of GaAs/ITO/Si junctions fabricated by surface-activated bonding

Tomoya Hara; Tomoki Ogawa; Jianbo Liang; Kenji Araki; Takefumi Kamioka; Naoteru Shigekawa


The Japan Society of Applied Physics | 2017

Deposition of semiconductor nanoparticles for improving Si solar cell characteristics

Shun Tanaka; Ryosuke Asakawa; Tomoki Ogawa; Tomoki Narazaki; Jianbo Liang; DaeGwi Kim; Naoteru Shigekawa


The Japan Society of Applied Physics | 2017

Characterization of InGaP/GaAs/ITO/Si Hybrid Triple-Junction Cells with ITO intermediate layers

Tomoya Hara; Tomoki Ogawa; Liang Jianbo; Kenji Araki; Takefumi Kamioka; Masafumi Yamaguchi; Naoteru Shigekawa


The Japan Society of Applied Physics | 2016

HAXPES measurements of GaAs thin film/Si junctions-effects of annealing on electrical properties

shoji yamajo; Tomoki Ogawa; Sanji Yoon; Jianbo Liang; Hassanet Sodabanlu; Kentaro Watanabe; Masakazu Sugiyama; Akira Yasui; Eiji Ikenaga; Naoteru Shigekawa


The Japan Society of Applied Physics | 2016

Surface activated bonding of Si substrates and ITO films

Tomoki Ogawa; Jianbo Liang; Kenji Araki; Takefumi Kamioka; Naoteru Shigekawa

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Kenji Araki

Toyota Technological Institute

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Takefumi Kamioka

Toyota Technological Institute

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Akira Yasui

Japan Atomic Energy Agency

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