Tomoko Kadowaki

1.3 /spl mu/m uncooled AlGaInAs-MQW DFB laser with /spl lambda//4-shifted grating

1.3 /spl mu/m uncooled AlGaInAs DFB-LDs with /spl lambda//4shifted grating have been successfully demonstrated. Relaxation oscillation frequency as high as 11.5 GHz has been obtained. Clear opening in the eye diagram under 10 Gbps direct modulation at 75/spl deg/C has been also confirmed. Preliminary life test over 5000 hours with no failure indicates its excellent reliability. The 1.3 /spl mu/m AlGaInAs DFB-LD with /spl lambda//4-shift grating is promising for the next generation high-speed data link systems such as 10 Gbps Ethernet.

Uniform and high-power characteristics of 780-nm AlGaAs TQW laser diodes fabricated by large-scale MOCVD

An approach to large-scale fabrication of high-power laser diodes lasing at a wavelength of around 780 nm is described. Heterostructures with AlGaAs triple quantum well (TQW) active layers are grown by using a metalorganic chemical vapor deposition (MOCVD) system which has a capacity of more than 12 2-in /spl phi/ wafers. Taking the limitations of uniformity and the controllability of the MOCVD growth into account, we have designed the TQW-SCH (separate confinement heterostructure) structure which is suitable for high-power operation. The designed TQW-SCH structures are formed with sufficient controllability by the MOCVD. In the lasers sampled from ten epitaxial wafers grown at one time, the various room temperature characteristics exhibited excellent uniformity. The linear CW light output power versus current characteristics up to 100 mW even at 60/spl deg/C are uniformly obtained over each epitaxial wafer. In preliminary aging tests at 60/spl deg/C and 50 mW, a highly stable operation over 500 h has been realized. A maximum CW output power of 170 mW and a fundamental transverse mode up to 100 mW are realized at room temperature. Even at 95/spl deg/C, a CW light output power of 100 mW is obtained. >