Tongtong Wang

Metallic Ni3N nanosheets with exposed active surface sites for efficient hydrogen evolution

Ni-Based catalysts have been considered as promising non-noble-metal hydrogen evolution reaction (HER) electrocatalysts for future clean energy devices. Here, atomically thin metallic Ni3N nanosheets are fabricated as the hydrogen evolution cathode, which exhibit remarkable HER activity close to that of a commercial Pt/C electrode. The Ni3N nanosheet catalyst shows an electrocatalytic current density of 100 mA cm2 at a low overpotential of 100 mV vs. RHE, a high exchange current density of 0.32 mA cm−2, a Tafel slope of 59.79 mV dec−1 and remarkable durability (little activity loss >5000 cycles) in acidic media as well as high HER activity in neutral and alkaline media. Through systematic theoretical calculations, the active surface sites of the Ni3N nanosheets are explicitly identified. The Ni atoms accompanied by surrounding N atoms on the N–Ni surface demonstrate a small ΔGH* of 0.065 eV due to the Ni–N co-effect, which act as the most active HER sites. This finding broadens our vision to realize the HER activity of 2D metallic electrocatalysts and paves the way for exciting opportunities in exploring and optimizing advanced catalysts for future energy production.

P dopants induced ferromagnetism in g-C3N4 nanosheets: Experiments and calculations

Outstanding magnetic properties are highly desired for two-dimensional (2D) semiconductor nanosheets due to their potential applications in spintronics. Metal-free ferromagnetic 2D materials whose magnetism originated from the pure s/p electron configuration could give a long spin relaxation time, which plays the vital role in spin information transfer. Here, we synthesize 2D g-C3N4 nanosheets with room temperature ferromagnetism induced by P doping. In our case, the Curie temperature of P doped g-C3N4 nanosheets reaches as high as 911 K and the precise control of the P concentration can further adjust the saturation magnetization of the samples. First principles calculation results indicate that the magnetic moment is primarily due to strong hybridization between p bonds of P, N, and C atoms, giving the theoretical evidence of the ferromagnetism. This work opens another door to engineer a future generation of spintronic devices.Outstanding magnetic properties are highly desired for two-dimensional (2D) semiconductor nanosheets due to their potential applications in spintronics. Metal-free ferromagnetic 2D materials whose magnetism originated from the pure s/p electron configuration could give a long spin relaxation time, which plays the vital role in spin information transfer. Here, we synthesize 2D g-C3N4 nanosheets with room temperature ferromagnetism induced by P doping. In our case, the Curie temperature of P doped g-C3N4 nanosheets reaches as high as 911 K and the precise control of the P concentration can further adjust the saturation magnetization of the samples. First principles calculation results indicate that the magnetic moment is primarily due to strong hybridization between p bonds of P, N, and C atoms, giving the theoretical evidence of the ferromagnetism. This work opens another door to engineer a future generation of spintronic devices.

Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions

We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature.

Phase-transfer induced room temperature ferromagnetic behavior in 1T@2H-MoSe2 nanosheets

Manipulating electronic and magnetic properties of two-dimensional transitional-metal dichalcogenides has raised a lot of attention recently. Herein we report the synthesis and ferromagnetic properties of phase-transfer induced room temperature ferromagnetic behavior in 1 T@2H-MoSe2 nanosheets. Experimental results indicate the saturated magnetization of the 1 T@2H-MoSe2 compound increases first and then decreases as the increasing of 1 T-MoSe2 phase, where 65.58% 1 T-MoSe2 phase incorporation in 2H-MoSe2 could enhance the saturated magnetization from 0.32 memu/g to 8.36 memu/g. Besides, obvious magnetoresistance behaviors are observed in these samples, revealing their potential applications in future spintronics.

Anion vacancy-mediated ferromagnetism in atomic-thick Ni3N nanosheets

Realizing spin and electronic behavior of two-dimensional ultrathin nanosheets is significant to construct next generation nanoelectronics. Here, atomic-thick Ni3N nanosheets with clear room temperature ferromagnetism and high saturation magnetization (1.2 emu/g) are reported. X-ray magnetic circular dichroism and first-principles calculation results give the evidence that the observed intrinsic ferromagnetism in Ni3N nanosheets originates from the surface N-deficiency, where alignments of localized large magnetic moments of Ni in the vicinity of the N defect can be aligned parallel to activate macroscopic ferromagnetism. These ultrathin Ni3N nanosheets show great potential application in next-generation electron devices.

Transition-metal-doped NiSe 2 nanosheets towards efficient hydrogen evolution reactions

Transition metal diselenides are promising electrocatalysts for hydrogen evolution and therefore different approaches have been proposed to enhance their catalytic activity. Herein, we describe systematic studies of the dependence of transition-metal doping on the catalytic activity of NiSe2 by first principles calculations, where Fe is demonstrated to be the best candidate element to tune the electrocatalytic activity of NiSe2 with lower ΔGH* values and increased electrical conductivity. To provide further experimental evidence, Fe-doped NiSe2 porous nanosheets grown on carbon cloth are successfully developed. These nanosheets show significantly improved efficiency for hydrogen evolution reactions compared to their un-doped counterpart. The optimized Ni0.8Fe0.2Se2 electrocatalyst gives rise to a current density of 10 mA·cm-2 at a very low overpotential of 64 mV with outstanding long-term stability. The present strategy of doping NiSe2 -based electrocatalysts with transition metals paves a new pathway for the design and synthesis of electrocatalysts for large-scale electrochemical energy applications.

Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the doping of N element can reduce the band gap of MoS2 nanosheets, which is conducive to improving the conductivity of the material. Therefore, in this paper, we prepared N-doped MoS2 nanosheets and then fabricated N-doped MoS2-PVP nanocomposite films by spin coating. Finally, the resistive memory [C. Tan et al., Chem. Soc. Rev. 44, 2615 (2015)], device with ITO/N-doped MoS2-PVP/Pt structure was fabricated. Study on the I-V characteristics shows that the device has excellent resistance switching effect. It is worth mentioning that our device possesses a threshold voltage of 0.75 V, which is much better than 3.5 V reported previously for the undoped counterparts. The above research shows that N-doped MoS2-PVP nano...

Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling

To control the semiconductor device under low magnetic field is still a great challenge for semiconductor magnetoelectronics. In this work, we report the observation of the magneto-photogalvanic effect in periodic GaAs dot arrays. With an increase in magnetic field from 0 to 1500 Oe, the photovoltage increases linearly for a wide temperature range from 80 to 430 K. Compared with GaAs without the dot arrays, periodic GaAs dot arrays have a hundredfold increase of the magnetic-field-modulated photovoltage at room temperature. By changing the magnetic field orientation, the angular dependence of photovoltage reveals that the magneto-photogalvanic effect stems from the Hall electric field caused by optical current, and the enhancement of magneto-photogalvanic effect is attributed to the p-n junction coupling between GaAs dots. When the coupling between the GaAs dots is broken at the high temperatures, i.e., T = 430 K, we demonstrate that the enhancement effect disappears as expected. Our results not only illu...