Toru Ushirogouchi

Comparision between alicyclic resist platforms in advanced 193-nm and 157-nm lithography

Alicyclic resist platforms have already thought to be imperative in 70-110 nm nodes advanced optical nano-lithography using ArF (193-nm) or F/sub 2/ (157-nm) excimer laser exposure system. In this paper, comparative studies of physical and chemical properties of these alicyclic platforms were reported. We also attempted to clarify the essential difference of their potentials in advanced optical nano-lithography.

Chemically amplified electron beam positive resist with acetal protecting group-effect of the additives on resist properties

We discuss a high-sensitivity electron beam (EB) positive resist based on acetal-protected poly(hydroxystyrene) (PHS) and also propose a new chemical amplification system. In this system, the generated acid after EB exposure acts as the catalyst for the deprotection reaction, as well as the water-generating reaction. This system can make the combination of acetal protecting group and strong acid possible in EB lithography.

Chemically amplified electron beam positive resist with acetal protecting group

In this paper, we discuss about the chemically amplified EB positive resist based on acetal-protected Poly(hydroxystyrene) (PHS) and investigate the influence of the photo-acid generator to resist performance.