Toshikazu Maekawa

40.3: Ultra-High Brightness 1.8-in. XGA poly-Si TFT LCD

A 1.8-in. diagonal poly-Si TFT LCD applicable to a full XGA format, well suited for displaying high luminance of 1800 ANSI lm, has been developed. We have optimized the pixel structure with an “advanced” on-chip-black matrix and developed a “Pre-charging method” to achieve high luminosity. We also have developed “ghost-free” circuitry to suppress a “ghost” effect, which frequently occurs in high resolution LCDs operated with high frequencies.

A 60 µm 2 SOI CMOS SRAM cell formed by new artificial seed method

A new SOI substrate was formed by using artificial 1 µm × 1 µm seeds, solid phase growth, selective epitaxy and polishing technology. The NMOS and PMOS transistors were formed on the substrate. The electron and hole mobility of these devices were of ∼160 cm²/v.sec and ∼100 cm²/v.sec, respectively. The 21 stages ring oscillator gave ∼130 psec of the delay time per stage and ∼220 fJ power-delay product at Vdd of 5 volt. A 60 µm²CMOS SRAM Cell was formed on this substrate using 1 µm design rule. The basic read/write operations were measured at Vdd of 5 volt.