Toshimitsu Kurumizawa

Discriminating Molecular Length of Chemically Adsorbed Molecules Using an Atomic Force Microscope Having a Tip Covered with Sensor Molecules (An Atomic Force Microscope Having Chemical Sensing Function)

A novel atomic force microscope (AFM) having a chemical sensing function has been proposed. Using an AFM having a tip on which surface sensor molecules were immobilized, the molecular lengths of chemically adsorbed molecules on the solid surface were discriminated for the first time.

Atomic force microscope for chemical sensing

A novel atomic force microscope (AFM) having a tip on whose surface sensor molecules were immobilized has been developed for chemical sensing. The AFM tips chemically modified with octadecyltrichlorosilane [CH3(CH)17SiCl3; OTS] or perfluorotrichlorosilane [CF3(CF2)7C2H4SiCl3; FS‐17] were more sensitive than the unmodified tips in detecting adhesive force on some monolayers on the silicon substrates. Using OTS modified tip, the hydrocarbon chain length of chemically adsorbed alkyltrichlorosilanes [CH3(CH)nSiCl3, n=1,8,13,17] on the silicon substrates was discriminated in ethanol environment. The origin of the interaction between the chemically modified tips and the sample surfaces, which depend on the monolayers and environmental liquids where the interactions were measured, has been speculated to arise from the entwining of carbon chains in monolayers on the tip and the sample.

TeGeSnAu Alloys for Phase Change Type Optical Disk Memories

TeGeSnAu thin films were studied for phase change type rewritable optical disk material. Addition of Au to TeGeSn thin film shortened crystallization time. The crystallization time of Te60Ge4Sn11Au25 thin film was about 0.3 µs and was less than one 100th of that of Te80Ge5Sn15 thin film. Formation of a simple cubic structure with no atomic diffusions had caused the fast crystallization. The obtained optical disks showed high recording/erasing sensitivity, cyclability and thermal stability. The TeGeSnAu alloys will be applicable to rewritable optical disks with high data transmission rates.

Atomic force microscope study of thin‐plate martensites in an Fe–Ni–C alloy

Morphology and accommodation of thin‐plate martensites in an Fe–Ni–C alloy have been investigated with atomic force microscopy (AFM). The quantitative observation of surface relieves made it possible to determine the kinds of thin‐plate martensite variants by combining with single‐face trace analysis. The martensites keep complementary configuration of variants in order to make the overall strain minimize. Strain distribution induced by the martensite formation in the parent phase was calculated using the height of the surface relief obtained by AFM observation and it was found that a highly strained region exists near the front of the martensite.

Structure and properties of MBE-grown Pt/Co multilayer, Pt/Cu doublelayer, Co/Cu doublelayer, Pt film and Cu film on Si(111)-(7×7) substrate

Abstract Crystal growth mode and surface topography of a Pt/Co multilayer showing perpendicular magnetic anisotropy have been investigated by RHEED and AFM. Electric conductivity of the various films were measured and the interface effect in the electric conductivity of the multilayer is discussed.

Scanning Tunneling Microscope and Atomic Force Microscope Observation of Topography of Molecular-Beam-Epitaxy-Grown Pt Films on Cu Buffer Layer and Si(111)-(7×7) Substrate

Topography of Pt films on a Cu buffer layer and Si(111)-(7×7) substrate has been observed by use of scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Changes in topography with increasing thickness of the Pt film are described. Topography of a Cu buffer layer is also described. The existence of two kinds of bands, due to the off-angle of the Si substrate, is shown. As microstructures within the bands, Pt films have a dendritic structure in the early stages of the increase of Pt film thickness, and in the later stages, a number of truncated triangular pyramids of Pt are formed all over the surface of the Pt film.