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Dive into the research topics where Toshimitsu Obonai is active.

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Featured researches published by Toshimitsu Obonai.


Japanese Journal of Applied Physics | 2015

Influence of heat treatment on physical properties of In?Ga?Zn?O thin films

Kenichi Okazaki; Hiroshi Kanemura; Toshimitsu Obonai; Junichi Koezuka; Masahiro Takahashi; Koji Dairiki; Shunpei Yamazaki

For unstable In?Ga?Zn?O (IGZO) thin films, electron-beam irradiation during transmission electron microscopy or heat treatment is reported to change the film structure and enhance its crystallization. Using IGZO films formed under two conditions, we study how the physical properties of IGZO films correlate with the electron-beam irradiation dose or heat-treatment temperature. IGZO films deposited under high deposition pressure contain many voids, have a relatively high impurity concentration, and are crystallized by electron-beam irradiation or heat treatment. In contrast, IGZO films formed under low deposition pressure are dense and the crystal size in the film does not change under electron-beam irradiation or heat treatment. In addition, heat treatment further increases the density of an originally dense film and reduces the defect density.


Japanese Journal of Applied Physics | 2011

Effect of Rare Earth Element Codoping on the Mn Red Emission in Ca and Sr Thiogallates: Focusing on Its Mechanism through Electron Spin Resonance Study of Single Crystals

Takeo Takizawa; Toshimitsu Obonai; Shigetaka Nomura; Chiharu Hidaka

The weak Mn2+ involved red emission in CaGa2S4 can be greatly enhanced by codoping with a suitable rare earth element (REE). To clarify the involved physical mechanism, the actual Mn sites in the host crystal are investigated through electron spin resonance (ESR) measurements of single crystals. Three different patterns of ESR signals with different angular dependences are observed by rotating the magnetic field around the three crystal axes. As a result, three independent sites occupied by the Mn2+ ions are confirmed. Based on the experimental finding that the hyper fine constants (HFS) for the three sites are nearly the same, the Mn2+ ion sites may be ascribed to the Ca or Ga sites. To finally solve this ascription issue, ESR measurements of Eu2+ in CaGa2S4 are carried out, where the Eu2+ ions have been shown to exclusively substitute at Ca sites. From the similar angular variation of the ESR signals of Eu2+ and Mn2+, the Mn substitutional sites are finally determined to be the three Ca ones. A broad ESR signal appearing in the vicinity of the Lande g factor (g = 2.0) suggests the possible presence of Mn clusters. We have to investigate to see whether these may be the actual emission centers.


Japanese Journal of Applied Physics | 2014

Low turn-on voltage due to conduction band lowering effect in crystalline indium gallium zinc oxide transistors

Daisuke Matsubayashi; Yoshiyuki Kobayashi; Shinpei Matsuda; Toshimitsu Obonai; Noritaka Ishihara; Tetsuhiro Tanaka; Sachiaki Tezuka; Hideomi Suzawa; Shunpei Yamazaki


Physica Status Solidi (a) | 2009

Energy transfer from rare-earth element to Mn in (Ca,Sr)Ga2S4 compounds

Toshimitsu Obonai; Chiharu Hidaka; Takeo Takizawa


SID Symposium Digest of Technical Papers | 2014

P‐9: Study of the Origin of Major Donor States in Oxide Semiconductor

Masashi Oota; Noritaka Ishihara; Motoki Nakashima; Yoichi Kurosawa; Takuya Hirohashi; Masahiro Takahashi; Shunpei Yamazaki; Toshimitsu Obonai; Yasuharu Hosaka; Junichi Koezuka; Yohsuke Kanzaki; Hiroshi Matsukizono; Seiji Kaneko; Takuya Matsuo


Archive | 2015

Semiconductor device, display device, input/output device, and electronic device

Masami Jintyou; Toshimitsu Obonai; Junichi Koezuka; Suzunosuke Hiraishi


Archive | 2013

Semiconductor Device and Method for Evaluating Semiconductor Device

Toshinari Sasaki; Hiroshi Kanemura; Yasuharu Hosaka; Shuhei Yokoyama; Toshimitsu Obonai


Optical Materials | 2010

ESR study of Mn2+ red emission in CaGa2S4 codoped with a REE

Toshimitsu Obonai; Chiharu Hidaka; Shigetaka Nomura; Takeo Takizawa


Archive | 2016

Semiconductor Device, Method for Manufacturing the Semiconductor Device, and Display Device Including the Semiconductor Device

Shunpei Yamazaki; Junichi Koezuka; Kenichi Okazaki; Masami Jintyou; Yasutaka Nakazawa; Toshimitsu Obonai; Yukinori Shima; Daisuke Kurosaki


Archive | 2014

Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration

Masashi Oota; Noritaka Ishihara; Motoki Nakashima; Yoichi Kurosawa; Shunpei Yamazaki; Yasuharu Hosaka; Toshimitsu Obonai; Junichi Koezuka

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Kenichi Okazaki

Tokyo University of Science

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Shigetaka Nomura

Tokyo University of Science

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Motoki Nakashima

Schweitzer Engineering Laboratories

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Yoichi Kurosawa

Schweitzer Engineering Laboratories

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Masashi Oota

Schweitzer Engineering Laboratories

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