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international symposium on power semiconductor devices and ic s | 2000

A new power MOSFET having excellent avalanche capability

Tsutomu Uesugi; Takashi Suzuki; Toshio Murata; Sachiko Kawaji; Hiroshi Tadano

In this paper, we explore a new concept for improvement of an avalanche capability of a power MOSFET. The concept is to make parasitic bipolar transistors in all over the chip turn on, and to suppress breakdown current crowding. The avalanche capability of an UMOSFET applied this new concept was 1500 mJ. This value was about one order higher than that of a conventional UMOSFET.


Archive | 2005

Exhaust gas control apparatus for engine and method for producing same

Yasunori Iwamoto; Masaharu Kuroda; Yasuhiro Nobata; Toshio Murata


Archive | 1997

Insulation gate type semiconductor element

Masayasu Ishiko; Toshio Murata; Tsutomu Uesugi; 勉 上杉; 年生 村田; 雅康 石子


Archive | 1998

Insulated-gate semiconductor device having a contact region in electrical contact with a body region and a source region

Toshio Murata; Sachiko Kawaji; Takashi Suzuki; Tsutomu Uesugi


Archive | 2010

Catalyst converter device

Toshio Murata; 村田 登志朗; Hideyuki Kohmitsu; 秀之 幸光


Archive | 2010

CATALYTIC CONVERTER DEVICE

Toshio Murata; Hideyuki Kohmitsu


Archive | 2008

Additive-agent diffusion plate in exhaust passage, structure of additive-agent diffusion plate, and exhaust system including additive-agent diffusion plate

Tomoki Mabuchi; Toshio Murata; Atsushi Inomata


Archive | 1996

Insulated-gate type semiconductor device and manufacturing method thereof

Sachiko Kawaji; Toshio Murata; Takashi Suzuki; Tsutomu Uesugi; 勉 上杉; 年生 村田; 佐智子 河路; 隆司 鈴木


Archive | 2010

Radiated sound reducing structure

Toshio Murata; Hideyuki Kohmitsu


Archive | 1999

SEMICONDUCTOR DEVICE COMPRISING THYRISTOR AND MANUFACTURING METHOD THEREFOR

Masayasu Ishiko; Sachiko Kawaji; Toshio Murata; 年生 村田; 佐智子 河路; 雅康 石子

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