Toshio Oka

Growth of Crystalline Silicon Films on Polycrystalline Substrate

Crystalline films of silicon were prepared on a tungsten substrate by vacuum evaporation. The method used here was evaporation of silicon on a tungsten substrate, on which thin gold film was predeposited, keeping the substrate at 600–800°C. Growth of plane crystals or whisker crystals was observed depending on growth conditions such as substrate temperature, thickness of gold film and evaporation rate. The sizes of grown plane crystals were as large as several hundreds microns. Their orientation is (111) plane parallel to the substrate and their conductivity is n-type. The details of the growing technique and the examination of grown films will be explained and growth mechanism will be discussed.