Toshisuke Kitakohji

Transmission electron microscopy study of chemical‐vapor‐deposited diamond by a side‐view method

The initial growth of synthetic diamond by dc plasma‐jet chemical vapor deposition was studied with a transmission electron microscope by a side‐view method. Both diamond particles and β‐SiC particles were observed on the Si substrate. Si atoms in the substrate were etched clearly by the plasma jet except beneath diamond particles.

Continuous TEM observation of diamond nucleus growth by side-view method

The growth of diamond particles using continuous transmission electron microscope (TEM) observation of a side-view of the sample was studied. Diamonds were synthesized using the DC plasma jet chemical vapor deposition (CVD). Synthesis was followed by TEM observation and this cycle was repeated. The shape of the diamond remained almost the same during growth and there were many small SiC particles on the Si surface. Analysis of this continuous observation suggested there was a thin (about 200 nm) gaseous layer containing CH4 radicals and SiH4 radicals. It appeared the SiC particles helped diamond particle growth on the Si substrate.