Toshiyasu Suzuki

Highly efficient phosphorescence from organic light-emitting devices with an exciton-block layer

One of the keys to highly efficient phosphorescent emission in organic light-emitting devices is to confine triplet excitons generated within the emitting layer. We employ “starburst” perfluorinated phenylenes (C60F42) as a both hole- and exciton-block layer, and a hole-transport material 4,4′,4″-tri(N-carbazolyl) triphenylamine as a host for the phosphorescent dopant dye in the emitting layer. A maximum external quantum efficiency reaches to 19.2%, and keeps over 15% even at high current densities of 10–20 mA/cm2, providing several times the brightness of fluorescent tubes for lighting. The onset voltage of the electroluminescence is as low as 2.4 V and the peak power efficiency is 70–72 lm/W, promising for low-power display devices.

Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy

The band‐gap energy (Eg) of metalorganic vapor phase epitaxially (MOVPE) grown Ga0.5In0.5P lattice matched to (001) GaAs is presented as a function of a wide range of V/III ratios and growth temperatures. Photoluminescence, Raman scattering spectroscopy, transmission electron microscopy, and impurity diffusion were used to investigate this functional relationship. Two pieces of evidence are shown which demonstrate that MOVPE Ga0.5In0.5P epitaxial layers with ‘‘abnormal’’ Eg∼1.85 eV and ‘‘normal’’ Eg∼1.9 eV correspond to an ordered and a random (Ga,In) distribution on column III sublattices, respectively. In an ordered state, a sequence of (110) planes...GaGaInInGaGaInIn...in the [110] direction is the most probable distribution.

Systematic Inflation of Buckminsterfillerene C60: Synthesis of Diphenyl Fulleroids C61 to C66

The synthesis of a new family of spheroidal carbon molecules derived from the fullerenes is described. The fulleroids are produced by incremental addition of a divalent carbon equivalent that has two phenyl (Ph) rings to fullerene C60. The fulleroids Ph2C61, Ph4C62, Ph6C63, Ph8C64, Ph10C65, and Ph12C66 have been prepared and characterized.

Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature

Abstract Properties of GaxIn1−xP grown by metalorganic vapor phase epitaxy at various V/III ratios and growth temperatures were studied by photoluminescence (PL) (300 K, 2 K), X-ray diffraction and Raman scattering measurements. PL peak energy, measured at 300 K, changed from ∼1.90 to ∼1.85 eV, both when V/III was varied from 62 to 412 at 700°C growth temperature and when growth temperature was varied from 750 to 650°C at a fixed V/III ratio of 62, while each GaxIn1−xP layer is lattice-matched t GaAs and has the same composition. The low Pl peak energy (∼1.85eV) was ascribed to the band edge luminescence and not to deep-level related luminiscence. Raman scattering spectra for these samples showed a systematic difference, corresponding only to the PL peak energy difference, indicating that the PL peak energy difference results from an energy band structure difference due to atomic-scale arrangement difference on the group III element sub-lattice. It is suggested that there is a greater degree of atomic-scale clustering on the group III element sub-lattice for samples with low PL peak energy than for samples with “normal” PL peak energy (∼1.9 eV).

Impact of Perfluorination on the Charge-Transport Parameters of Oligoacene Crystals

The charge-transport parameters of the perfluoropentacene and perfluorotetracene crystals are studied with a joint experimental and theoretical approach that combines gas-phase ultraviolet photoelectron spectroscopy and density functional theory. To gain a better understanding of the role of perfluorination, the results for perfluoropentacene and perfluorotetracene are compared to those for their parent oligoacenes, that is, pentacene and tetracene. Perfluorination is calculated to increase the ionization potentials and electron affinities by approximately 1 eV, which is expected to reduce significantly the injection barrier for electrons in organic electronics devices. Perfluorination also leads to significant changes in the crystalline packing, which greatly affects the electronic properties of the crystals and their charge-transport characteristics. The calculations predict large conduction and valence bandwidths and low hole and electron effective masses in the perfluoroacene crystals, with the largest mobilities expected along the pi-stacks. Perfluorination impacts as well both local and nonlocal vibrational couplings, whose strengths increase by a factor of about 2 with respect to the parent compounds.

Micromagnetic analysis of current driven domain wall motion in nanostrips with perpendicular magnetic anisotropy

Current driven domain wall motion in nanostrips with perpendicular magnetic anisotropy was analyzed by using micromagnetic simulation. The threshold current density of perpendicular anisotropy strips in adiabatic approximation was much smaller than that of in-plane anisotropy strips, and it reduced with thickness reduction. The differences originate from the differences in domain wall width and hard-axis anisotropy. Also, the threshold current density of perpendicular anisotropy strips required to depin from a pinning site was quite small although the threshold field of the strips was sufficiently large relative to those of in-plane anisotropy strips.

Organic Thin-Film Transistors with High Electron Mobility Based on Perfluoropentacene

We report on n-channel organic thin-film transistors (OTFTs) based on the novel n-type organic semiconductor, perfluoropentacene. The transistor exhibits excellent electrical characteristics, with a high electron mobility of 0.22 cm2/(V s) and a good current on/off ratio of 105. The electron mobility is comparable to the hole mobility of a pentacene OTFT. By combining the n-type perfluoropentacene and the p-type pentacene, we have fabricated ambipolar OTFTs and complementary inverter circuits. The OTFTs with heterostructures of the p- and n-type organic semiconductors can operate as an ambipolar device with high electron and hole mobilities of 0.042 and 0.041 cm2/(V s). The complementary inverter using an n-channel perfluoropentacene OTFT and a p-channel pentacene OTFT exhibits excellent transfer characteristics with a voltage gain of 45. A complementary inverter using the ambipolar OTFTs is also demonstrated.

ELECTROCHEMICAL PROPERTIES OF FULLERENOLANTHANIDES

Abstract The cyclic voltammogram (CV) of Y@C 82 shows one reversible oxidation and four reversible reductions in 1,2-dichlorobenzene. The first redox potentials of Y@C 82 are anodically shifted by 30 and 50 mV, respectively, relative to those of La@C 82 . As observed for La@C 82 and Y@C 82 , the first redox processes of Ce@C 82 and Gd@C 82 are reversible by CV, and their potentials are also very close to those of La@C 82 and Y@C 82 . It was found that the ionic radii of Ln 3+ show good linear relationships with the first redox potentials of La@C 82 , Ce@C 82 , Gd@C 82 , and Y@C 82 .

Adsorption-induced intramolecular dipole: correlating molecular conformation and interface electronic structure.

The interfaces formed between pentacene (PEN) and perfluoropentacene (PFP) molecules and Cu(111) were studied using photoelectron spectroscopy, X-ray standing wave (XSW), and scanning tunneling microscopy measurements, in conjunction with theoretical modeling. The average carbon bonding distances for PEN and PFP differ strongly, that is, 2.34 A for PEN versus 2.98 A for PFP. An adsorption-induced nonplanar conformation of PFP is suggested by XSW (F atoms 0.1 A above the carbon plane), which causes an intramolecular dipole of approximately 0.5 D. These observations explain why the hole injection barriers at both molecule/metal interfaces are comparable (1.10 eV for PEN and 1.35 eV for PFP) whereas the molecular ionization energies differ significantly (5.00 eV for PEN and 5.85 eV for PFP). Our results show that the hypothesis of charge injection barrier tuning at organic/metal interfaces by adjusting the ionization energy of molecules is not always readily applicable.

Tetrabenzo[8]circulene: Aromatic Saddles from Negatively Curved Graphene

An aromatic saddle was designed from the hypothetical three-dimensional graphene with the negative Gaussian curvature (Schwarzite P192). Two aromatic saddles, tetrabenzo[8]circulene (TB8C) and its octamethyl derivative OM-TB8C, were synthesized by the Scholl reaction of cyclic octaphenylene precursors. The structure of TB8C greatly deviates from planarity, and the deep saddle shape was confirmed by single-crystal X-ray crystallography. There are two conformers with the S4 symmetry, which are twisted compared to the DFT structure (D2d). The theoretical studies propose that the interconversion of TB8C via the planar transition state (125 kcal mol(-1)) is not possible. However, the pseudorotation leads to a low-energy tub-to-tub inversion via the nonplanar transition state (7.3 kcal mol(-1)). The ground-state structure of TB8C in solution is quite different from the X-ray structure because of the crystal-packing force and low-energy pseudorotation. OM-TB8C is a good electron donor and works as the p-type semiconductor.