Toyoo Miyajima

Transmission electron microscopy study on the crystallization and boron distribution of CoFeB/MgO/CoFeB magnetic tunnel junctions with various capping layers

High-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) were used to study the microstructural properties of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with various capping layers. Crystallization of CoFeB layers was strongly dependent on the capping materials, and was affected by B diffusion. With NiFe-cap MTJs, CoFeB crystallized from the cap interface and formed a fcc structure; on the other hand, with Ta- and Ti-cap MTJs, CoFeB crystallized from the MgO interface and formed a bcc structure. EELS analysis showed that B mainly diffused to the capping layers and rarely to the MgO layers with increasing temperature. With Ti-cap MTJs, B diffusion caused hcp-Ti crystals to form an amorphous structure and CoFeB crystallized at lower temperature.

In situ heat treatment of ultrathin MgO layer for giant magnetoresistance ratio with low resistance area product in CoFeB/MgO/CoFeB magnetic tunnel junctions

In order to promote the grain growth of ultrathin MgO barrier deposited on a CoFeB layer, in situ infrared (IR) heat treatment just after the deposition of MgO barrier was examined. In case that IR heat treatment was not applied, tunneling magnetoresistance (TMR) ratio of CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) was significantly decreased with decreasing resistance area (RA) product to less than 10 Ω μm2. On the other hand, TMR ratio of 206% was achieved at the RA product of 2.1 Ω μm2 when the IR heat treatment was applied. According to the cross sectional transmission electron microscope images for the samples with 0.76-nm-thick (∼4 ML) MgO barrier, the (001) oriented well crystallized structure with smooth interface was observed for the IR heated sample. Moreover, it revealed that the lateral grain size of MgO was significantly enlarged compared to that for the sample without IR heating. The improvement of TMR properties at low RA product region by the heat treatment might be due to the decrease ...

Lower-temperature crystallization of CoFeB in MgO magnetic tunnel junctions by using Ti capping layer

Effects of capping materials on magnetoresistance (MR) properties of MgO magnetic tunnel junctions (MTJs) with a CoFeB free layer were investigated. MR ratios of samples with various capping materials showed a difference in annealing temperature dependence. MTJ with a Ti capping layer annealed at 270°C showed a MR ratio 1.4 times greater than that with a conventional Ta or Ru capping layer. Secondary ion mass spectroscopy and high-resolution transmission electron microscopy images revealed that crystallization of CoFeB was remarkably affected by adjacent materials and the Ti capping layer adjoining CoFeB acted as a boron-absorption layer. These results suggest that the crystallization process can be controlled by choosing proper capping materials. Ti is one of the effective materials that accelerate the crystallization of CoFeB layers at lower annealing temperature.

Direct Observation of Atomic Ordering and Interface Structure in Co2MnSi/MgO/Co2MnSi Magnetic Tunnel Junctions by High-Angle Annular Dark-Field Scanning Transmission Electron Microscopy

The atomic ordering of Co2MnSi (CMS) full-Heusler film and the interface structure of CMS/MgO/CMS magnetic tunnel junctions (MTJs) were investigated by high-angle annular dark-field scanning transmission electron microscopy (HAADF STEM). We observed the atomic ordering of L21 and B2 structures of CMS from the atomic number (Z) contrast STEM images. We also confirmed that the interface structure consists of the layer next to the Co layer terminating in the CMS to MgO layer from the layer periodicity along the [001] direction, however, site-disorder exists between two atomic layers at the termination of CMS, including locally L21-ordered MnSi terminated structure.

Low temperature Cu-Cu direct bonding for 3D-IC by using fine crystal layer

In this paper, we report a method of low temperature solid diffusion bonding. To investigate bondability of solid diffusion, we examined the effect of bump metals and bump planarization methods. Cu and Au bump were used for bump metals and CMP and ultra-precision cutting were used for bump planarization methods. We found that fine crystal layer could be formed on only cut Cu and Au bumps, and especially cut Cu bumps had a thick fine crystal layer on the surface. The layer on cut Cu bump was found to be easily to recrystallize at low temperature condition of 150 degree C. Moreover, the bonding interface of cut Cu bump disappeared at 200 degree C for 30 min, which means solid diffusion across the interface was realized with the contribution of fine crystal layer. In addition, for Cu-Cu direct bonding, formic acid treatment before bonding is effective because formic acid can react at low temperature without destroying fine crystal layer. That led to achieve high bonding strength between cut Cu bumps.

Suppression of threshold voltage shift for normally-Off GaN MIS-HEMT without post deposition annealing

In this paper, we present a method of reducing threshold voltage shift for normally-off GaN MIS-HEMT by the optimization of dielectric deposition conditions. High-temperature deposition of Al2O3 insulator decreases the impurities in a dielectric film, leading to small C-V and I-V hysteresis under large positive gate voltage operation. Moreover, Al2O3 deposited at high temperature achieve high quality interface and bulk without post deposition annealing (PDA), preventing the degradation of electrodes and crystallization of insulator film. The fabricated device shows small C-V and I-V hysteresis, with a breakdown voltage of greater than 600 V.

Polarized neutron reflectivity study of a thermally treated MnIr/CoFe exchange bias system.

It has recently been found that the exchange bias of a MnIr/CoFe system can be increased significantly by adding a thermal treatment to the bilayer. To reveal the origin of the higher exchange bias, we performed polarized neutron reflectivity measurements at the JRR-3 neutron source. The magnetization vector near the MnIr/CoFe interface for thermally treated samples differed from that for samples without the treatment. We propose a model in which the pinned spin area at the interface is extended due to the increased roughness and atomic interdiffusion that result from the thermal treatment.

Origin analysis of thermal neutron soft error rate at nanometer scale

Recently, thermal neutrons have been identified as a cause of soft errors in advanced electronic devices. To analyze the origin of such errors, dynamic secondary ion mass spectrometry (SIMS), time-of-flight (TOF)-SIMS, and three-dimensional atom probe (3DAP) methods have been used systematically. TOF-SIMS results showed that the existence region of 10B, the source of soft errors, has a high correlation to the existence region of W. Furthermore, 3DAP results for the sample extracted from the area near the W-plug revealed high 10B concentration at the W-plug.