True-Lon Lin

MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches

Self-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistance

Punch-through prevention in trenched DMOS with poly-silicon layer covering trench corners

Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings

DMOS fabrication process implemented with reduced number of masks

MOSFET transistor cell manufactured with selectively implanted punch through prevent and threshold reductoin zones

Power MOSFETs and cell topology

Cost savings for manufacturing planar MOSFET devices achieved by implementing an improved device structure and fabrication process eliminating passivation layer and/or field plate

Mosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggedness

MOSFET structure and fabrication process for decreasing threshold voltage