Tsukasa Miyajima

Thermal emittance and response time measurements of negative electron affinity photocathodes

The thermal emittance and temporal response of a photocathode set an upper limit on the maximum achievable electron beam brightness from a photoemission electron source, or photoinjector. We present measurements of these parameters over a broad range of laser wavelength for two different negative electron affinity (NEA) photocathodes. The thermal emittance of NEA GaAs and GaAsP has been measured by two techniques—a measurement of the beam size downstream from a solenoid, whose strength was varied, and a double slit transmission measurement—for different laser spot sizes and shapes. The effect of space charge on the beam spot size allows a good estimation of the photoemission response time from these cathodes. Both cathodes show a subpicosecond response for laser wavelengths shorter than 520 nm.

High-voltage testing of a 500-kV dc photocathode electron gun

A high-voltage dc photocathode electron gun was successfully conditioned up to a voltage of 550 kV and a long-time holding test for 8 h was demonstrated at an acceleration voltage of 500 kV. The dc photocathode electron gun is designed for future light sources based on energy-recovery linac and consists of a Cockcroft-Walton generator, a segmented cylindrical ceramic insulator, guard-ring electrodes, a support-rod electrode, a vacuum chamber, and a pressurized insulating gas tank. The segmented cylindrical ceramic insulator and the guard-ring electrodes were utilized to prevent any damage to the insulator from electrons emitted by the support-rod electrode.

Temporal Response Measurements of GaAs-Based Photocathodes

It is well known that a negative electron affinity GaAs photocathode shows a moderate temporal response when excited by a laser pulse of wavelength close to its band gap energy. We show here that the temporal response can be estimated using a diffusion model that describes the internal transport of the conduction electrons. Using a transverse deflection cavity system, we measured the temporal profile of the electron bunch generated by a DC photocathode gun illuminated by a ps pulsed laser. A systematic set of measurements of GaAs cathodes with various active layer thicknesses and boundary conditions confirmed that the observed temporal response is well understood by the diffusion model calculation.

Generation of a 500-keV electron beam from a high voltage photoemission gun

High-brightness, high-current electron guns for energy recovery linac light sources and high repetition rate X-ray free-electron lasers require an exit beam energy of ≥500 keV to reduce space-charge induced emittance growth in the drift space from the gun exit to the following superconducting accelerator entrance. At the Japan Atomic Energy Agency, we have developed a DC photoemission gun employing a segmented insulator to mitigate the field emission problem, which is a major obstacle for operation of DC guns at ≥500 kV. The first demonstration of generating a 500-keV electron beam with currents up to 1.8 mA is presented.

Commissioning of the PF Ring after the Reconstruction for the Straight‐sections Upgrade

At the 2.5‐GeV ring of the Photon Factory, a large reconstruction of the lattice around the straight sections has been accomplished in 2005. Thus reconstruction is the main part of the straight‐sections upgrade project to rebuild existing undulators and to increase the number of undulator beamlines. As a result of the reconstruction, four short straight sections have been newly created and the lengths of the existing straight sections have been much extended. To exploit the new straight sections, short‐period narrow‐gap undulators which have a sufficiently high brilliance in hard x‐ray range have been developed. The reconstruction work of the ring was completed in a seven‐month shutdown from March to September, 2005. In the area over two thirds of the storage ring, all the quadrupole magnets and all the beam ducts have been renewed and rearranged to construct the new lattice. Recommissioning of the storage ring was finished at the end of October, 2005. Though we made no in‐situ baking for the beam ducts, ...

Mean Transverse Energy Measurement of Negative Electron Affinity GaAs-Based Photocathode

A negative electron affinity GaAs photocathode electron source is characterized by high brightness, high quantum efficiency, and a moderate temporal response. The initial emittance depends on the mean transverse energy (MTE) of the electrons on the cathode surface. We evaluated the MTE based on emittance measurements obtained using the waist scan method with three types of cathodes: bulk GaAs, thickness-controlled samples with active-layer thicknesses of 100 and 1000 nm, and a GaAs/GaAsP superlattice sample. The dependence of the cathode quantum efficiency, the laser wavelength, and the thickness of the GaAs cathode active layer on the MTE are described. In the case of the bulk GaAs and the thickness-controlled samples, it was determined that the thickness and cathode quantum efficiency do not affect the MTE within the measurement error. The laser wavelength, on the other hand, affects the MTE of all cathodes.

Present status of Photon Factory Advanced Ring

The upgrade project of the pulse X-ray source PF-AR was successfully completed by the end of 2001. The initial beam current and the lifetime were largely improved. The injection energy was raised from 2.5 GeV to 3.0 GeV, the maximum beam current of 65 mA was achieved. With a new global orbit feedback system, orbit drifts were largely improved.

Picosecond electron bunches from GaAs/GaAsP strained superlattice photocathode.

GaAs/GaAsP strained superlattices are excellent candidates for use as spin-polarized electron sources. In the present study, picosecond electron bunches were successfully generated from such a superlattice photocathode. However, electron transport in the superlattice was much slower than in bulk GaAs. Transmission electron microscopy observations revealed that a small amount of variations in the uniformity of the layers was present in the superlattice. These variations lead to fluctuations in the superlattice mini-band structure and can affect electron transport. Thus, it is expected that if the periodicity of the superlattice can be improved, much faster electron bunches can be produced.

Development of a 500-kV Photocathode DC Gun for ERLS

We have developed a 500-kV, 10-mA photocathode DC gun for energy recovery linac (ERL) light sources. A segmented ceramic insulator with guard rings is employed to improve robustness at high voltage operation, because this structure can prevent field emission electrons from directly striking the ceramic surface. We have recently succeeded in applying 500 kV on the ceramics for eight hours without any discharge. This high voltage testing was performed with a simple configuration without NEG pumps, cathode and anode electrodes to mainly study the field emission from a tube supporting the cathode electrode. The same high voltage testing with a full configuration necessary for beam generation was carried out up to 380 kV where some increase of radiation was observed. Up-to-date status of our gun development is presented in detail.

New Upgrade Project for the Photon Factory Storage Ring

A new project for upgrading the 2.5‐GeV Photon Factory (PF) storage ring is now being undertaken to create six new short‐straight sections and to lengthen the existing eight straight sections. The short‐straight sections will provide an opportunity to install short‐period narrow‐gap undulators, while the extensions of existing straight sections will be taken advantage of updating current insertion devices to the latest models in future. To this end, the lattice configuration around the straight sections is modified by replacing old quadrupole magnets with new shorter ones and placing them closer to the near‐by bending magnets. Necessary replacement of the vacuum ducts and the beamline front ends will be carried out together. This project will be completed by the end of September, 2005, after six months of shutdown.