Ulrich J. Lewark

MMIC-based chipset for multi-Gigabit satellite links in E-band

In this paper, a chipset for a multi-Gigabit satellite links, supporting both the designated up and downlink frequencies in E-Band, is presented. It consists of I/Q-upand downconversion circuits, frequency multipliers for LO signal generation, a low noise amplifier (LNA) with excellent noise performance and a power amplifier with a saturated output power above 22 dBm, all realized in a metamorphic high electron mobility transistor (mHEMT) MMIC process. Link budget calculations taking into account the measured chip performance show the feasibility of a low earth orbit (LEO) satellite downlink with data rates up to 5 Gbit/s.

Fully Integrated 300 GHz Receiver S-MMICs in 50 nm Metamorphic HEMT Technology

Two fully integrated H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) heterodyne receivers have been successfully developed, based on a 50 nm metamorphic high electron mobility transistor (mHEMT) technology. A fabricated fundamental down-conversion receiver achieved a conversion gain of more than 11 dB in the frequency range from 270 to 310 GHz with an LO power of only 12 dBm. Furthermore, a subharmonic receiver S-MMIC was developed, consisting of an active frequency multiplier by three, a two stage driver amplifier, a single-ended resistive mixer, and a four-stage low-noise amplifier, demonstrating a conversion gain of more than 12 dB from 290 to 320 GHz with a subharmonic LO-power of 8 dBm. Grounded coplanar waveguide (GCPW) topology in combination with cascode transistors resulted in a very compact die size of less than 1.25 mm^2.

255 to 330 GHz active frequency tripler MMIC

An active frequency tripler MMIC achieving an output frequency of 330 GHz is presented. With the use of integrated post- amplification the frequency tripler generates an average output power of -0.4 dBm in the output frequency range from 255 to 330 GHz, corresponding to an absolute bandwidth of 75 GHz. At 288 GHz the measured output power is 0.6 dBm with an input power of 10 dBm and with an input power of 1 dBm the conversion gain is -2.7 dB. The MMIC is realized in a metamorphic HEMT technology with 35 nm gate-length and uses 1.25 × 0.5 mm2 of chip space for convenient integration into multifunctional MMIC circuits.

Multi-Gigabit Millimeter-Wave Wireless Communication in Realistic Transmission Environments

With the growing interest in millimeter-wave (mmW) communication links, especially for multi-gigabit backhaul applications, detailed studies on the performance limits in terms of achievable transmission distance and data rate, but also, and perhaps even more important, thorough investigations on the influence of different weather conditions gain in importance. In this paper we present a millimeter-wave monolithic integrated circuit (MMIC)-based transmit and receive front-end and ultra-broadband wireless data transmission experiments utilizing a 240 GHz carrier frequency in a long-range outdoor scenario as well as measurements inside a climatic wind tunnel. Data rates up to 64 Gb/s and various complex modulation formats are employed. While in the outdoor transmission, the link is tested in terms of maximum achievable transmission distance and data rate as well as alignment accuracy, in the climatic wind tunnel the influence of rain and fog in the transmission path is investigated in a defined and controlled environment.

Multi-gigabit data transmission using MMIC-based E-band frontends

In this paper, the transmission of broadband complex modulated signals with data rates up to 48 Gbit=s using an E-band MMIC-based analog frontend is shown. The paper presents the transmission of QPSK, 8-PSK and 16-QAM modulated signals with a symbol rate of 12 GBd. The received signal quality is evaluated in terms of error vector magnitude, which, measured in a coherent setup, shows values of -18.8 dB, -18.7 dB and -20.9 dB for the QPSK, 8-PSK and 16-QAM signal, respectively. Using a more application oriented incoherent setup, the signal quality decreases about 1 dB.

A Monolithic Integrated mHEMT Chipset for High-Resolution Submillimeter-Wave Radar Applications

In this paper, we present the development of a millimeter-wave monolithic integrated circuit (MMIC) chipset for use in a high-resolution radar system operating at 300 GHz. The chipset consists of a frequency multiplier by twelve, a medium power amplifier, a high power amplifier and a fully integrated 300 GHz heterodyne receiver MMIC. The frequency multiplier and the two amplifier circuits have been realized using a 100 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology and achieve a saturated output power of approximately 20 dBm between 90 and 105 GHz. The 300 GHz receiver S-MMIC was fabricated using a more advanced 35 nm mHEMT technology and demonstrates a conversion gain of more than 7 dB between 270 and 325 GHz. All circuits were successfully packaged into millimeter-wave waveguide modules and used to realize a compact 300 GHz radar demonstrator, which delivers an instantaneous bandwidth of 40 GHz together with an outstanding range resolution of 3.7 mm.

E-band active frequency-multiplier-by-eight MMIC with >20 dB conversion gain and excellent spurious suppression

We present an active eight-fold frequency-multiplier with more than 20 dB conversion gain. The output 3-dB bandwidth is 72 to 85GHz, forming a tunable frequency source within the 71 to 76 and 81 to 86GHz communication bands with a saturated output power of 10 dBm for LO generation with an input power of only −8 dBm. The suppression of unwanted harmonics is better than 37 dBc. The MMIC is realized in a metamorphic HEMT technology with 100 nm gate-length.

MMIC-based module-level frequency generation for e-band communication systems

We present a PLL stabilized VCO at X-Band frequencies extended by a frequency multiplier-by-eight module forming a variable LO source for E-Band communication systems with enough output power to drive an E-Band mixer without additional post amplification. The module shows a 3-dB output bandwidth from 73 to 85 GHz with a saturated output power of 10 dBm. Together with the VCO module the source features a phase noise of -89 dBc/Hz at 100 kHz offset from the 76.8 GHz carrier.

A Miniaturized Unit Cell for Ultra-Broadband Active Millimeter-Wave Frequency Multiplication

A compact broadband unit cell for the design of broadband frequency multipliers is presented. Based on design methods from moderate frequencies, a novel integrated balanced field-effect transistor architecture is introduced, pushing ultra-broadband balanced frequency multiplication into the high millimeter-wave range. The realized microwave monolithic integrated circuits (MMICs) using this topology provide second harmonic generation over several decades using only a single integrated transistor unit cell. The circuits are fabricated in a metamorphic HEMT technology for convenient integration into multifunctional MMICs and achieve relative bandwidths of 199% from 60 MHz to 80 GHz and 70.1% in D- and G-band (110-170 and 140-220 GHz).

Active single ended frequency multiplier-by-nine MMIC for millimeter-wave imaging applications

An active frequency multiplier-by-nine MMIC with integrated buffer amplifier reaching 94 GHz from X-band is presented. The multiplier-by-nine generates an average output power of −7.7 dBm in the frequency range from 82 to 102 GHz. At 94 GHz the measured output power is −6.4 dBm with an input power of 10 dBm. The suppression of unwanted harmonics is better than 23 dBc. The comparison to the simulated results shows the performance of the underlying large-signal mHEMT models. The MMIC is realized in metamorphic HEMT technology with 100 nm gate-length.