V. A. Batalin

Electron-beam enhancement of the metal vapor vacuum arc ion source

We report detailed investigations of the electron-beam metal vapor vacuum arc (E-MEVVA) ion source. The experiments were performed in Moscow and Tomsk with nearly the same design of ion sources. We recently reported the first conclusive demonstration of electron-beam enhancement of MEVVA performance using lead and bismuth cathodes, which yielded maximum ion charge states of Pb7+ and Bi8+ for E-MEVVA, as compared to Pb2+ and Bi2+ for conventional MEVVA operation. In this article we report extensive results for additional cathode materials, further details of the Moscow and Tomsk ion sources, and a discussion of electron beam effects on E-MEVVA performance. These results can be considered as a proof of the E-MEVVA principle.

Further development of the E-MEVVA ion source

We report detailed investigations of the electron-beam metal vapor vacuum-arc (E-MEVVA) ion source, which were performed jointly among the Institute for Theoretical and Experimental Physics, Moscow, Russia, the High Current Electronics Institute, Tomsk, Russia, and Brookhaven National Laboratory, USA. The experiments were performed in Moscow and Tomsk with nearly the same design of ion sources. Recently, the first successful ion charge states enhancement for this kind of ion source was demonstrated. This article presents comparisons of electron-beam effects and examines their influence on E-MEVVA performance. Substantial enhancement of high ion charge states enhancement was observed clearly in both experimental setups with two different methods of measuring the ion charge state distributions. These results can be considered as a proof of the E-MEVVA principle.

ITEP Bernas ion source with additional electron beam

A joint research and development program is underway to develop steady-state intense ion sources for the two energy extremes of MeV and hundreds of eV. For the MeV range the investigations were focused on charge-state enhancement for ions generated by the modified Bernas ion sources. Based on the previously successful ITEP experience with the e-metal vapor vacuum arc ion source [e.g., Batalin et al., Rev. Sci. Instrum. 75, 1900 (2004)], the injection of a high-energy electron beam into the Bernas ion source discharge region is expected to enhance the production of high charge states. Presented here are construction details and studies of electron-beam influence on the enhancement of ion-beam charge states generated by the modified Bernas ion source.

Highly stripped ion sources for MeV ion implantation

A joint research and development effort whose ultimate goal is to develop an intense, high charge state, ion source for mega-electron-volt ion implanters has been initiated. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with radio frequency (rf) accelerators. Usually, a MeV Linear Accelerator (MV LINAC) is used for acceleration of a few milliamperes. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform [direct current (dc) acceleration] to generate high-energy ion beams for implantation. This endeavor is a continuation of earlier research, which resulted in generating ions like Pb+7 and Bi+8 and ion currents exceeding 200 mA. The natural next step is to convert and optimize ion charge state enhancement techniques to generate B, P, As, and Sb ions, and adapt them to a dc implanter. A number of schemes are to be pursued simultaneously. The most promising approach is to be developed in...

Ion sources for the varying needs of ion implantation

A joint research and development effort whose ultimate goal is to develop steady-state intense ion sources to meet the needs of the two energy extremes of ion implanters (mega-electron-volt and of hundreds of electron-volt) has been in progress for the past two years. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MeV linear accelerator is used for acceleration of a few milliamperes. It is desirable to have instead an intense, high charge state ion source on a relatively low-energy platform (dc acceleration) to generate high-energy ion beams for implantation. This endeavor has already resulted in very high steady-state output currents of higher charge states antimony and phosphorous ions. Low-energy ion implantation is performed presently by decelerating high-energy extracted ions. Consequently, output currents are low due to space charge problems. Contamination is also a problem due to gases and plasmas e...

Two approaches to electron beam enhancement of the metal vapor vacuum arc ion source

Conclusive demonstration of electron-beam enhancement of ion charge states for the Metal Vapor Vacuum Arc (MEVVA) ion source was recently achieved using an external electron beam (E-MEVVA) in experiments performed jointly among the Institute for Theoretical and Experimental Physics (ITEP), Moscow, Russia, the High Current Electronics Institute (HCEI), Tomsk, Russia, and Brookhaven National Laboratory (BNL), USA. The E-MEVVA experiments were performed in Moscow and Tomsk with nearly the same design of ion sources. Results for lead and bismuth cathodes yielded maximum ion charge states of Pb 7+ and Bi 8+ for E-MEVVA, as compared to Pb 2+ and Bi 2+ for conventional MEVVA operation. Additional encouraging results were also obtained using a Z-discharge to produce an internal electron-beam (Z-MEVVA and LIZ-MEV).

Ion sources for energy extremes of ion implantation.

For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P(2+) [8.6 pmA (particle milliampere)], P(3+) (1.9 pmA), and P(4+) (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb(3+)Sb(4+), Sb(5+), and Sb(6+) respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

Ion sources for energy extremes of ion implantation (invited)

For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P(2+) [8.6 pmA (particle milliampere)], P(3+) (1.9 pmA), and P(4+) (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb(3+)Sb(4+), Sb(5+), and Sb(6+) respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

Ion sources for energy extremes of ion implantation (invited)a)

For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P(2+) [8.6 pmA (particle milliampere)], P(3+) (1.9 pmA), and P(4+) (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb(3+)Sb(4+), Sb(5+), and Sb(6+) respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

Sources for Low Energy Extreme of Ion Implantation

A joint research and development effort focusing on the design of steady state, intense ion sources has been in progress for the past four and a half years. The ultimate goal is to meet the two, energy extreme range needs of mega‐electron‐volt and 100’s of electron‐volt ion implanters. This endeavor has resulted in record steady state output currents of higher charge state Antimony and Phosphorous ions: P2+ (8.6 pmA), P3+ (1.9 pmA), and P4+ (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb3+ Sb4+, Sb5+, and Sb6+ respectively. During the past year the effort was channeled towards low energy implantation, for which the effort involved molecular ions and a novel plasmaless/gasless deceleration method. To date, 3 emA of positive Decaborane ions were extracted at 14 keV and a smaller current of negative Decaborane ions were also extracted. Additionally, a Boron fraction of over 70% was extracted from a Bernas‐Calutron ion source.A joint research and development effort focusing on the design of steady state, intense ion sources has been in progress for the past four and a half years. The ultimate goal is to meet the two, energy extreme range needs of mega‐electron‐volt and 100’s of electron‐volt ion implanters. This endeavor has resulted in record steady state output currents of higher charge state Antimony and Phosphorous ions: P2+ (8.6 pmA), P3+ (1.9 pmA), and P4+ (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb3+ Sb4+, Sb5+, and Sb6+ respectively. During the past year the effort was channeled towards low energy implantation, for which the effort involved molecular ions and a novel plasmaless/gasless deceleration method. To date, 3 emA of positive Decaborane ions were extracted at 14 keV and a smaller current of negative Decaborane ions were also extracted. Additionally, a Boron fraction of over 70% was extracted from a Bernas‐Calutron ion source.