V.A. Molchanov

Sputtering of solicon and germanium by middle-energy heavy ions

Abstract The angular and energy dependences of the sputtering ratios of silicon and germanium targets under bombardment by argon ions of ten-keV energy are studied.

Directional effects of the molecular ion reflection from a crystal surface

Abstract The reflection of 30 keV molecular N+2 ions from the (100) face of copper crystal has been studied experimentally. Under the examined experimental conditions, the yield of the reflected molecular ions has been found to sharply increase when the primary ion incidence plane gets parallel to the axis of the surface semichannels formed by the close-packed atomic rows of a single-crystal target. The magnitude of the effect is more than 15 times as high compared with random orientation of the primary beam with respect to the irradiated crystal target.

On a new method of observing defects annealing in crystals

Abstract A simple convenient method based on the use of ion impact phenomena is proposed for studying the kinetics of the annealing of defects.

A mechanism of ion scattering by crystals

Abstract On the basis of new experimental data a simple qualitative mechanism of ion scattering by crystals is proposed.

The features of molecular ion dissociation for ion reflection from a copper single-crystal surface

Reflection of 30 keV molecular nitrogen ions from a (100) copper crystal face is studied for a variety of experimental geometries. The dependence of the ion intensity on the azimuthal angle of target rotation throughout the variation interval of glancing angles studied is much stronger for molecular ions reflected without dissociation compared with the dissociated ions.

Effect of surface semichanneling on energy distributions of molecular ions reflected from single-crystal surface

Abstract Regularities in the energy distributions of molecular nitrogen ions reflected from (100)Cu crystal face are studied. The half-widths (FWHM) of the energy distributions of the reflected ions have been found to vary strongly near aligned orientations of the target with respect to the bombarding ion beam. A relationship has been found between the survival fraction of reflected molecular ions and the effect of ion focusing in surface semichanneling.

Energy distributions of fast ionized recoils

Abstract The angular and energy distributions of fast ionized recoils produced under both single-crystalline and polycrystalline copper bombardment by 10–35 keV energy noble gas ions have been investigated. The distributions have been found to be strongly affected by regular arrangement of the target atoms. The obtained results are discussed in terms of the simple models of the process.

Spatial and energy distributions of ions scattered by crystal

Abstract A sharp anisotropy of spatial and energy distributions of ions scattered by crystal has been observed.

Energy distributions of fast ionized recoils ejected from crystals under ion bombardment

Abstract The angular and energy distributions of fast ionized recoils produced under copper irradiation by 10–35 keV energy argon ions have been investigated. The distributions have been found to be strongly determined by the regular arrangement of the target atoms. The results obtained are discussed in terms of a model similar to that suggested by Oen for the blocking effect.

Ultrasharp diamond-coated silicon tips for scanning-probe devices

The goal of the work was to develop a technique for preparing cantilevers for atomic force microscopy with ultra-sharp, ultra-hard tips. For this purpose, two technologies were combined: (a) preparation of Si cantilevers with the principal (111)-oriented face; (b) formation of the probe by growing of single-crystal Si columns on the cantilevers from the vapor phase (vapor-liquid-solid VLS) with subsequent sharpening, deposition of diamond on the tips formed, and sharpening of the diamond tips by ion-beam bombardment. Sharp diamond tips with curvature radii as small as 20 nm were formed.