V. Brouet
University of Paris-Sud
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Publication
Featured researches published by V. Brouet.
Physical Review Letters | 2005
X. Zhou; Junren Shi; T. Yoshida; Tanja Cuk; Wanli Yang; V. Brouet; J. Nakamura; Norman Mannella; Seiki Komiya; Yoichi Ando; Fang Zhou; W. X. Ti; J. W. Xiong; Z.X. Zhao; T. Sasagawa; T. Kakeshita; H. Eisaki; S. Uchida; A. Fujimori; Zhenyu Zhang; E. W. Plummer; R. B. Laughlin; Z. Hussain; Zhi-Xun Shen
High resolution angle-resolved photoemission spectroscopy data along the (0, 0)-(pi,pi) nodal direction with significantly improved statistics reveal fine structure in the electron self-energy of the underdoped (La2-xSrx)CuO4 samples in the normal state. Fine structure at energies of (40-46) meV and (58-63) meV, and possible fine structure at energies of ( 23 - 29) meV and ( 75 - 85) meV, have been identified. These observations indicate that, in (La2-xSrx) CuO4, more than one bosonic modes are involved in the coupling with electrons.
Physical Review B | 2009
V. Brouet; M. Marsi; Barbara Mansart; A. Nicolaou; A. Taleb-Ibrahimi; P. Le Fèvre; F. Bertran; F. Rullier-Albenque; A. Forget; D. Colson
We present a comprehensive angle-resolved photoemission study of the three-dimensional electronic structure of
Physical Review Letters | 2010
V. Brouet; F. Rullier-Albenque; M. Marsi; Barbara Mansart; M. Aichhorn; Silke Biermann; Jérôme Faure; L. Perfetti; A. Taleb-Ibrahimi; P. Le Fèvre; F. Bertran; A. Forget; D. Colson
\text{Ba}{({\text{Fe}}_{1\ensuremath{-}x}{\text{Co}}_{x})}_{2}{\text{As}}_{2}
Physical Review B | 2016
Laura Fanfarillo; Joseph Mansart; Pierre Toulemonde; H. Cercellier; Patrick Le Fèvre; F. Bertran; Belen Valenzuela; L. Benfatto; V. Brouet
. The wide range of dopings covered by this study,
Physical Review Letters | 2004
Junren Shi; S.-J. Tang; Biao Wu; Phillip T. Sprunger; Wanli Yang; V. Brouet; X. Zhou; Z. Hussain; Zhi-Xun Shen; Zhenyu Zhang; E. W. Plummer
x=0
Physical Review B | 2002
V. Brouet; H. Alloul; Slaven Garaj; L. Forró
to
Physical Review Letters | 2013
V. Brouet; Ping-Hui Lin; Y. Texier; J. Bobroff; A. Taleb-Ibrahimi; P. Le Fèvre; F. Bertran; Michele Casula; Philipp Werner; Silke Biermann; F. Rullier-Albenque; A. Forget; D. Colson
x=0.3
Physical Review B | 2012
V. Brouet; C Lin; M. Fuglsand Jensen; Ping-Hui Lin; A. Taleb-Ibrahimi; P. Le Febre; F. Bertran; Wei Ku; A. Forget; D. Colson
, allows to extract systematic features of the electronic structure. We show that there are three different hole pockets around the
Physical Review Letters | 1999
V. Brouet; H. Alloul; F. Quéré; G. Baumgartner; L. Forro
\ensuremath{\Gamma}
Physical Review B | 2015
V. Brouet; Joseph Mansart; L. Perfetti; Christian Piovera; I. Vobornik; Patrick Le Fèvre; F. Bertran; Scott C. Riggs; M. C. Shapiro; Paula Giraldo-Gallo; I. R. Fisher
point: the two inner ones being nearly degenerate and rather two dimensional, the outer one presenting a strong three-dimensional character. The structure of the electron pockets is clarified by studying high doping contents, where they are enlarged. They are found to be essentially circular and two dimensional. From the size of the pockets, we deduce the number of holes and electrons present at the various dopings. We find that the net number of carriers is in good agreement with the bulk stoichiometry but that the number of each species (holes and electrons) is smaller than predicted by theory. Finally, we discuss the quality of nesting in the different regions of the phase diagram. The presence of the third hole pocket significantly weakens the nesting at