V. E. Chelnokov

Surface barrier height in metal-n-6H-SiC structures

Abstract This work makes a comparison of some experimental data on surface barrier height with calculations based on classical models of surface barrier formation in semiconductor-metal structures. We have estimated the dependences of surface barrier height on surface states density, the value of Fermi level surface “pinning”, metal workfunction and uncompensated donors concentration. These calculations together with available experimental data made it possible to estimate surface properties of real 6H-SiC-metal structures.

Growth and investigation of epitaxial 6H-SiC layers obtained by CVD on Lely-grown substrates

The aim of the present work was: (1) to grow SiC epilayers on Lely-grown 6H-SiC substrates (characterized at present by the highest crystalline perfection) and (2) to investigate the quality of the epilayers. The growth of the SiC epitaxial layers was performed in the system SiH4-CH4-H2. It was found that the crystal perfection of the on-grown epilayers is not much less than that of the Lely substrate. To study the electrical properties of the obtained epitaxial layers, Schottky barriers were formed on their surfaces with the use of various metals. In layers grown on sublimation- and hydrogen-etched substrates, the concentration Nd-Na was ~ 6 × 1016 − 3 × 1017 cm−3 The thickness of the intermediate region between substrates and epilayers was smaller than 0.01 μm.

Investigation of 6H–SiC site competition epitaxy the silane–methane–hydrogen gas system

Abstract The homoepitaxial growth of 6H–SiC layers has been performed using methane and silane as active gas sources. Voltage–capacitance measurements and results of i-DLTS spectroscopy characterized the epilayers. In accordance of the C/Si ratio in the gas phase the epitaxial layers exhibit n- or p-type conductivity. The dependence of N D − N A or N A − N D = F (Si/C) in unintentionally doped layers is, as we suggest, connected with structural defects.

High temperature silicon carbide stabilitrons for the voltage range from 4 to 50 V

Abstract Voltage stabilitrons based on 6H-SiC p-n structures produced by the open-system sublimation technique have been fabricated. Stabilization voltages were in the range 4–50 V. Operating currents were from 1 to 100 mA. Differential resistance was in the range 10–20 Ω at 100 mA current. Upper ambient temperature was 300 °C.

New result in 6H SiC "site-competition" epitaxy

In this work we report on an investigation of 6H-SiC epitaxial layers grown by using atmospheric pressure CVD with a CH/sub 4/-SiH/sub 4/-H/sub 2/ gas system. The epilayers are characterised by volt-capacitance measurements and preliminary results of i-DLTS spectroscopy.

High temperature 6H-SiC dinistor

Abstract 6H-SiC dinistors based on epitaxial layers grown by sublimation epitaxy were fabricated. Parameters of these devices were studied at the temperatures 500–800 K.