V. F. Khopin

Bismuth-doped-glass optical fibers—a new active medium for lasers and amplifiers

Optical fibers with bismuth-doped silicate and germanate glass cores were fabricated by the modified chemical vapor deposition technique (solution and vapor-phase Bi incorporation). The fibers revealed an efficient luminescence with a maximum in the 1050-1200 nm spectral range, FWHM up to 200 nm, and a lifetime of the order of 1 ms.

Combined excitation-emission spectroscopy of bismuth active centers in optical fibers

3D excitation-emission luminescence spectra of Bi-doped optical fibers of various compositions were measured in a wide wavelength range 450-1700 nm. Such luminescence spectra were obtained for Bi-doped pure silica and germania fibers, and for Bi-doped Al- or P-codoped silica fibers (at room and liquid nitrogen temperatures). The energy level schemes of IR bismuth active centers in pure silica and germania core fibers were derived from spectra obtained. The energy level schemes similarity of bismuth active centers in these two types of fibers was revealed.For the first time, 3-dimensional luminescence spectra (luminescence intensity as a function of the excitation and emission wavelengths) have been obtained for bismuth-doped optical fibers of various compositions in a wide spectral range (450-1700 nm). The bismuth-doped fibers investigated have the following core compositions: SiO(2), GeO(2), Al-doped SiO(2), and P-doped SiO(2). The measurements are performed at room and liquid nitrogen temperatures. Based on the experimental results, the positions of the low-lying energy-levels of the IR bismuth active centers in SiO(2)- and GeO(2)-core fibers have been determined. Similarity of the energy-level schemes for the two core compositions has been revealed.

Low-loss singlemode large mode area all-silica photonic bandgap fiber.

We describe the design and characterization of solid core large mode area bandgap fibers exhibiting low propagation loss and low bend loss. The fibers have been prepared by modified chemical vapor deposition process. The bandgap guidance obtained thanks to a 3-bilayer periodic cladding is assisted by a very slight index step (5.10-4) in the solid core. The propagation loss reaches a few dB/km and is found to be close to material loss.

Bi-Doped Optical Fibers and Fiber Lasers

The current state of the art in infrared Bi-doped fiber laser research is reviewed. The relevant fiber glass compositions and fiber technologies are introduced. Lasers operating on transitions ranging from 1.15 to 1.55 μm occurring in the bismuth active centers and their energy level schemes are discussed on the basis of the spectroscopic properties of these centers. Continuous-wave fundamental-mode power levels ranging from a few mW near 1.55 μm up to 16 W near 1.16 μm and 22 W near 1.46 μm have been demonstrated in recent years.

Bi-doped fiber lasers and amplifiers for a spectral region of 1300–1470 nm

Bismuth-doped fiber lasers operating in the range 1300-1470 nm have been demonstrated for the first time, to our knowledge. It has been shown that Bi-doped alumina-free phosphogermanosilicate fibers reveal optical gain in a wavelength range of 1240-1485 nm with pumping at 1205, 1230, or 808 nm.

Laser diode pumped bismuth-doped optical fiber amplifier for 1430 nm band

A 24 dB gain bismuth-doped fiber amplifier at 1430 nm pumped by a 65 mW commercial laser diode at 1310 nm is reported for the first time (to our knowledge). A 3 dB bandwidth of about 40 nm, a noise figure of 6 dB, and a power conversion efficiency of about 60% are demonstrated. The temperature behavior of the gain spectrum is examined.

High-power photonic-bandgap fiber laser

An original architecture of an active fiber allowing a nearly diffraction-limited beam to be produced is demonstrated. The active medium is a double-clad large-mode-area photonic-bandgap fiber consisting of a 10,000 ppm by weight Yb(3+)-doped core surrounded by an alternation of high- and low-index layers constituting a cylindrical photonic crystal. The periodic cladding allows the robust propagation of a approximately 200 microm(2) fundamental mode and efficiently discriminates against the high-order modes. The M(2) parameter was measured to be 1.17. A high-power cw laser was built exhibiting 80% slope efficiency above threshold. The robust propagation allows the fiber to be tightly bent. Weak incidence on the slope efficiency was observed with wounding radii as small as 6 cm.

Germania-glass-core silica-glass-cladding modified chemical-vapor deposition optical fibers: optical losses, photorefractivity, and Raman amplification

Germania-glass-core silica-glass-cladding single-mode fibers (deltan as great as 0.143) with a minimum loss of 20 dB/km at 1.85 microm were fabricated by modified chemical-vapor deposition. The fibers exhibit strong photorefractivity, with type IIa index modulation of 2 x 10(-3). A Raman gain of 300 dB/(kmW) was determined at 1.12 microm. Only 3 m of such fibers is sufficient for constructing the 10-W Raman laser at 1.12 microm with a 13-W pump at 1.07 microm.

Ultraviolet radiation- and γ radiation-induced color centers in germanium-doped silica glass and fibers

Abstract Induced optical losses and paramagnetic Ge(n) centers were investigated in germanium-doped silica glass and optical fibers after γ and ultraviolet (UV) irradiation. It was found that both types of irradiation created similar effects. By means of selective UV irradiation, Ge (1 and 3) centers were identified in optical absorption spectra, presumably as induced bands centered at 4.4 eV and 6.2 eV, respectively. Moreover, photobleaching of Ge(1) centers took place under 266-nm wavelength excitation. In optical fibers no difference was observed between γ- and UV-induced loss spectra in the wavelength range from 480 nm to 1,900 nm. Partial reversibility of the photocoloration was observed. For comparison, the coloration effects were studied in glass prepared by means of modified chemical vapor deposition (MCVD) vapor-phase axial deposition (VAD), and plasma-activated chemical vapor deposition (PCVD) techniques.

Bismuth-doped silica-based fiber lasers operating between 1389 and 1538 nm with output power of up to 22 W

An efficient CW bismuth fiber laser operating around 1.46 μm with an efficiency of >50% and an output power of >20 W has been developed on a bismuth-doped GeO(2)-SiO(2) fiber. The laser demonstrates weak dependence of the output power on temperature in comparison with bismuth lasers operating near 1.15 and 1.3 μm. The laser generation has been obtained in the range 1.39 to 1.54 μm. The first linearly polarized bismuth-doped fiber laser at 1.46 μm based on a PANDA-type fiber has been demonstrated.