V. G. Firsov

The effect of radiation defects in silicon single crystal lattice on the characteristic states of the interstitial muonium atom

Radiation defects are shown experimentally to affect differently the normal and anomalous muonium states in silicon. This evidences essentially different mobilities of the two muonium states in the sample lattice.

Depolarization ofμ+ muons in GaAs single crystals

AμSR study has been carried out on high resistivity single crystal gallium arsenide (GaAs). Three characteristic states involving theμ+ muon (Mu*, Mu,μ+ were shown to exist in a binary semiconductor, similar to the case of elemental semiconductors.

μSR-study of reactivity of substituent ions and point-like defects in quartz monocrystals

AbstractμSR-method has been used for studying reactions of muonium as an analogue of a light hydrogen isotope with impurity atoms and point-like defects. The relaxation rate of muonium polarization λMu was measured for 11 samples with different concentrations of impurity atoms and defects. The rate constants of reactions of muonium with Fe, Al, Li, Ba, Cu, Mn, Ti and Pb atoms in quartz were defined.

Equivalent states of muonium and implanted hydrogen in silicon (experiment)

Main experimental data on the hydrogen-like states with an anisotropic hyperfine structure forming in silicon single crystals in the implantation of high energy muons and protons are presented. The characteristics of the “anomalous” muonium (Mu*) and hydrogen-containing silicon AA9 states studied by the muon spin rotation (μSR) and ESR techniques in silicon with a due inclusion of the isotope effect are shown to be similar, thus suggesting the existence of two equivalent structures in silicon, Mu* and AA9, differing only in the mass of the paramagnetic center.