V.G. Kotlyar

Effect of Si(100)-c(4 × 12)-Al and Si(111)-(5.55 × 5.55)-Cu reconstructions on the deposition of cobalt onto silicon surface

The use of surface reconstructions for modifying properties of single crystal silicon substrates with a view to the creation of new nanostructures is a promising direction in the development of nanotechnologies. Systems Si(100)-c(4 × 12)-Al and Si(111)-(5.55 × 5.55)-Cu occupy special positions among stable reconstructions of the silicon surface, which have been recently demonstrated to be promising templates. The adsorption of cobalt on these surfaces at various temperatures has been studied using scanning tunneling microscopy. The room-temperature deposition leads to the formation of a weakly ordered layer of metallic Co with retained initial reconstructions at the Co/Si interface. An increase in the temperature leads to the formation of faceted cobalt silicide islands on both reconstructed surfaces.

Scanning tunneling microscopy observation of ultrathin epitaxial CoSi2(111) films grown at a high temperature

Scanning tunneling microscopy (STM) is used to study the basic laws of growth of ultrathin epitaxial CoSi2(111) films with Co coverages up to 4 ML formed upon sequential deposition of Co and Si atoms taken in a stoichiometric ratio onto the Co–Si(111) surface at room temperature and subsequent annealing at 600–700°C. When the coverage of Co atoms is lower than ~2.7 ML, flat CoSi2 islands up to ~3 nm high with surface structure 2 × 2 or 1 × 1 grow. It is shown that continuous epitaxial CoSi2 films containing 3–4 triple Si–Co–Si layers grow provided precise control of deposition. CoSi2 films can contain inclusions of the local regions with (2 × 1)Si reconstruction. At a temperature above 700°C, a multilevel CoSi2 film with pinholes grows because of vertical growth caused by the difference between the free energies of the CoSi2(111) and Si(111) surfaces. According to theoretical calculations, structures of A or B type with a coordination number of 8 of Co atoms are most favorable for the CoSi2(111)2 × 2 interface.

Electron-stimulated nitridation of Si(100) in pure ammonia

We present the results of an AES study of the Si(100) electron-stimulated nitridation at RT by ammonia gas. The influence of the gas pressure and electron beam density on the nitridation rate have been determined within the ranges 10−6–10−9 Torr and 5 × 10−3–5 × 10−2 A/cm2, respectively. The silicon nitride growth rate has been found to be proportional to the electron flux and is enhanced with increased ammonia pressure in the range 10−9–10−7 Torr. Beyond 10−7 Torr the Si nitride growth rate is constant and independent of ammonia pressure. A phenomenological model of electron-stimulated nitridation process is suggested, which is in good agreement with the experimental data. The rate of electron-stimulated nitridation has been deduced.

A cooling system for samples for studying their surfaces in ultrahigh vacuum

The device described is designed to cool samples with liquid nitrogen to T=−165°C during low-energy electron diffraction (LEED) studies at an ultra-high-vacuum MALTIPROBE Compact system (Omicron) and versions thereof equipped with a scanning tunneling microscope and an LEED system. The efficiency of the system is demonstrated using the example of a low-temperature 2×1 ↔ c(4×2) phase transition on a (100)-oriented silicon surface observed using the LEED technique.

Magnetoresistive properties of nanostructured magnetic metals, manganites, and magnetic semiconductors

We consider methods for controlling magnetoresistive parameters of magnetic metal superlattices, manganites, and magnetic semiconductors. By reducing the thickness of ferromagnetic layers in superlattices (e.g., Fe layers in Fe/Cr superlattices), it is possible to form superparamagnetic clustered–layered nanostructures with a magnetoresistance weakly depending on the direction of the external magnetic field, which is very important for applications of such type of materials. Producing Mn vacancies and additionally annealing lanthanum manganites in the oxygen atmosphere, it is possible to increase their magnetoresistance by more than four orders of magnitude. By changing the thickness of p–n junction in the structure of ferromagnetic semiconductors, their magnetoresistance can be increased by 2–3 orders of magnitude.

Modification of the sample holder for a variable temperature scanning tunneling microscope (Omicron)

The design of a sample holder for a variable temperature scanning tunneling microscope (VT STM (Omicron)) with a variable sample temperature is described. This design considerably extends the range of investigated materials whose surface structure is sensitive to low concentrations of contaminations. The device is manufactured on the basis of the components of a standard holder with the possibility of heat-treating samples in a temperature range of 100–1500 K. The working capacity of the modified sample holder was demonstrated for an example of obtaining a Si(100)−2 × 1 surface with an ultimately low concentration of structural defects.

Increase in the density of β-FeSi2 nanoclusters on a Si(111) surface by means of Si(111) √3 × √3R30°-B reconstruction

The formation of iron disilicide (β-FeSi2) nanoclusters as a result of solid-state epitaxy at T = 500–700°C and an iron coverage of 0.05–0.5 monolayer on a boron-modified Si(111)√3 × √3 R30° surface has been studied by scanning tunneling microscopy. It is established that the number density of β-FeSi2 nanoclusters on the Si(111) √3 × √3 R30°-B surface significantly exceeds the density of silicide clusters formed on the atomically clean Si(111) surface with a 7 × 7 reconstruction for the analogous iron coverages and annealing temperatures. At the same time, the density of point defects and clusters possessing metallic conductivity on the Si(111) √3 × √3 R30°-B surface is several orders of magnitude lower than on the Si(111)7 × 7 surface treated under identical conditions.