V. I. Ivashchenko

Molecular dynamics simulations of a − SiC films

Empirical molecular dynamics simulations combined with a recursion procedure are applied to the study of the atomic and electronic structures of

Simulations of the mechanical properties of crystalline, nanocrystalline, and amorphous SiC and Si

a\text{\ensuremath{-}}\mathrm{SiC}

Comparative first-principles study of TiN/SiNx/TiN interfaces

thin films. The films are generated from the condensation of diluted

First-principles study of the atomic and electronic structures of crystalline and amorphous B 4 C

\mathrm{Si}\text{\ensuremath{-}}\mathrm{C}

Tight-binding molecular-dynamics simulations of amorphous silicon carbides

vapor on a crystalline silicon substrate similarly to atom-by-atom deposition. The as-deposited films are annealed at different temperatures. Growth kinetics, bonding configuration, chemical ordering, cohesion, relaxation effects, surface roughness, atomic level stress, and electronic properties of the films are investigated as functions of the deposition parameters: vapor temperature, applied particle force, and substrate and annealing temperatures. The results are compared with those associated with bulk and film samples of

First-principles study of TiN/SiC/TiN interfaces in superhard nanocomposites

a\text{\ensuremath{-}}\mathrm{SiC}

Simulations of indentation-induced phase transformations in crystalline and amorphous silicon

generated from the melt. The main theoretical findings on

First-principles study of phase stability of stoichiometric vanadium nitrides

a\text{\ensuremath{-}}\mathrm{SiC}

Tribology of amorphous, nanocrystalline, and crystalline slabs of Si, C, and SiC

films are in rather good agreement with experimental evidences.