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Dive into the research topics where V. I. Kadushkin is active.

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Featured researches published by V. I. Kadushkin.


Journal of Applied Physics | 1994

Quantum corrections to the conductivity and quantum Hall effect in GaAs‐GaAlAs multiple quantum well structures

V.A. Kulbachinskii; V. G. Kytin; V. I. Kadushkin; E.L. Shangina; A. de Visser

The magnetotransport properties of GaAs‐GaAlAs multiple quantum well structures, with widths of the quantum wells Lw=33–66 A, have been investigated over a wide temperature and field range. The variation of the electron mobility with Lw (and temperature) can be accounted for by interface roughness scattering. A negative magnetoresistance was observed. An analysis within the theory of weak localization allowed us to evaluate the relaxation time of the phase of the electronic wave function and its temperature dependence τφ(T). Measurements in high‐magnetic fields (up to 40 T) at T=4.2 K revealed pronounced Shubnikov‐de Haas oscillations and the quantum Hall effect.


Physica B-condensed Matter | 1994

Quantum corrections to conductivity and quantum hall effect in GaAs-GaAlAs multiple quantum well structures

V.A. Kulbachinskii; A. de Visser; V. I. Kadushkin; V. G. Kytin; E.L. Shangina

Abstract We report on an investigation of the galvanomagnetic properties of GaAs-GaAlAs superlattices. The results can be explained in terms of interface roughness scattering of electrons in quantum wells.


Jetp Letters | 1994

Quasi-1D electron channels and 2D electron gas in structures with vicinal faces of GaAs delta-doped with tin

A. de Visser; V. I. Kadushkin; V.A. Kulbachinskii; V. G. Kytin; A.P. Senichkin; E.L. Shangina


Physics of Low-dimensional Structures | 1994

Magnetotransport anisotropy in the GaAs(delta-Sn) structures with quantum wires

V. I. Kadushkin; V.A. Kulbachinskii; A.P. Senichkin; A.S. Bugaev; V. G. Kytin; E.L. Shangina; A. de Visser


Optics and Spectroscopy | 1998

Optical echelette on a vicinal facet of semi-insulating GaAs(Cr)

V. I. Kadushkin; Elena L Shangina


Technical Physics Letters | 1996

Photovoltaic effect in a laser-excited asymmetric GaAs/AlGaAs nanostructure

Inna V. Kucherenko; L. K. Vodopyanov; V. I. Kadushkin


Semiconductors | 1996

Characteristic features of transport phenomena in alternatively doped GaAs/Ga1 - xAlxAs heterostructures

N.B. Brandt; V.A. Kulbachinskii; V. G. Kytin; R. A. Lunin; V. I. Kadushkin; E.L. Shangina; Anne Marie de Visser


Semiconductors | 1996

Energy spectrum and photoluminescence of a GaAs (delta -Sn) structure grown on a vicinal face

V. I. Kadushkin; E.L. Shangina


Physics of Low-dimensional Structures | 1996

Anisotropy of the negative magnetoresistance in the delta-doped by Sn and Si on vicinal substrate GaAs structures

V.A. Kulbachinskii; N.B. Brandt; V. G. Kytin; V. I. Kadushkin; E.L. Shangina; A.P. Senichkin


Semiconductors | 1995

Current-voltage characteristic of an asymmetric system of GaAs/AlGaAs quantum wells separated by wide barriers

V. I. Kadushkin; E.L. Shangina; V. V. Kapaev; Inna V. Kucherenko; Alexey Podlivaev; Igor A. Rudnev; A. A. Sinchenko

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V. G. Kytin

Moscow State University

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A. de Visser

University of Amsterdam

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N.B. Brandt

Moscow State University

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R. A. Lunin

Moscow State University

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A.S. Bugaev

Moscow State University

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Alexey Podlivaev

National Research Nuclear University MEPhI

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