V. I. Vasil’ev

Isoperiodical heterostructures GaInAsSb/GaSb grown by LPE from Sb-rich melts in spinodal decomposition area

Ga 1-x In x As y Sb 1-y layers lattice-matched to GaSb were grown by LPE from Sb-rich melts with compositions up to x = 0.4 inside the spinodal decomposition area. Crystal and optical properties of solid solutions were studied using double-crystal X-ray diffraction (DCXRD), photoluminescence (PL). The main conditions which provide epitaxial growth of stable solid solutions in spinodal decomposition area were clarified. It was found that the properties of epitaxial layers depended on the value and the type of deformation during the growth as well as the layer thickness.

GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts

Nearly isoperiodic solitary Ga1−xInxAsySb1−y/GaSb heterostructures, in which the composition of the solid solution should be found inside the region of spinodal decay (x⩽0.4), were grown by liquid-phase epitaxy from solution-melts enriched with antimony. On the basis of the results of a study of structural and luminescence properties of Ga1−xInxAsySb1−y/GaSb heterostructures we have determined the main conditions ensuring reproducible growth of epitaxial layers, homogeneous in the composition of their solid solutions in the region where the existence of processes of spinodal and binodal decay have been theoretically predicted. It is shown that the magnitude and sign of the deformation which the layer undergoes during growth and also the thickness of the layer are the main factors influencing the properties of the growing GaInAsSb solid solutions in the spinodal-decay zone.

New data on the composition and crystal structure of galkhaite (Hg,Cu)6(Cs,Tl)(As,Sb)4S12

AbstractThe composition of galkhaite from the Gal-Khaya deposit (Yakutia, Russia) and Chauvay Mine (Kyrgyzstan) has been examined by electron microprobe. A significant Cs content (up to 6.64 wt %) has been established in the mineral from both deposits; earlier, it had been not detected by either chemical or spectral analyses. The empirical formulas of galkhaite are (Hg4.89Cu0.92Zn0.07)5.88(Cs0.71Tl0.17)0.88(As3.98Sb0.17)4.15 S12.10 and (Hg4.64Cu0.98Zn0.34)5.96 (Cs0.85Tl0.04)0.89(As3.68Sb0.42)4.10S12.05 at the Gal-Khaya deposit and Chauvay Mine, respectively. The crystal structure of galkhaite from the Chauvay Mine (cubic, I43m, a = 10.4144(1) Å, V = 1129.5(2) Å3, Z = 2) for the composition [Hg4.83(Cu,Zn)0.98□](Cs0.71Tl0.14□) (As3.44Sb0.56)S12 has been determined by direct methods and refined to R = 0.0203. The structure of galkhaite is a framework consisting of vertex-shared [(Hg,Cu)-S4 2.5068(3) Å] tetrahedrons of the same orientation as large cavities formed in the initial sphalerite structural type due to eight anion vacancies: two [S4]-tetrahedrons at the point of origin and at the center of the I-cell and 12 cation vacancies as 2 cation octahedrons around the 000 and

Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions

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Properties of narrow-bandgap (0.3–0.48 eV) A3B5 solid solution epilayers grown by metal-organic chemical vapor deposition

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Crystallographic analysis of the structure of livingstonite HgSb4S8 from refined data

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Properties of GaInAsSb solid solutions obtained from antimony fluxes by liquid-phase epitaxy in the spinodal decay region

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Optimization of solubilization and purification procedures for the hydroxylase component of membrane-bound methane monooxygenase from Methylococcus capsulatus strain M.

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A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE

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