V. Kishore

Structural and electrical measurements of CdZnSe composite

TheI—Vcharacterization and the electrical resistivity of selenium rich Se85Cd15-xZnx (x = 0, 3, 7, 11 and 15) system at room temperature have been studied. Samples were obtained using melt cooling technique. So prepared samples were then characterized in terms of their crystal structure and lattice parameter using X-ray diffraction method. The materials were found to be poly crystalline in nature, having zinc blend structure over the whole range of zinc concentration. The measurements ofI—V bdcharacteristics have been carried out at different temperatures from room to 140°C. The electrical resistivity of the samples with composition at room temperature has been found to vary between maximum 2.7 x 108 Ωm and minimum 7.3 x 105 Ωm and shows a maximum at 3 at. wt.% of Zn. The carrier activation energy of the samples with composition has also been determined and found to vary from 0.026 eV to 0.111 eV.

Temperature dependence of effective thermal conductivity and effective thermal diffusivity of CdZnSe composite

Samples of selenium rich Se85Cd15−xZnx (x = 0, 3, 7, 11 and 15) system in bulk form have been prepared using a technique of slow cooling of the melt. Measurements of effective thermal conductivity (λe) and effective thermal diffusivity (χe) of Se85Cd15−xZnx pellets, prepared at constant load of 10 tons, have been carried out from room temperature to 200 °C using the transient plane source technique. The variation in λe and χe of Se85Cd15−xZnx with the concentration of zinc and temperature is explained on the basis of structure modifications of the samples and the mean free path of the phonons due to scattering from defects and voids.