V. L. Korenev

Spin diffusion of optically oriented electrons and photon entrainment in n-gallium arsenide

An experimental and theoretical study of spin transport in the n-GaAs semiconductor is reported. Transport of average electron spin from the photoexcited crystal surface is shown to be determined by the spin diffusion process. At the same time the transport of photoexcited carriers takes place primarily through photon entrainment, which transfers nonequilibrium carriers into the bulk of the semiconductor to distances considerably in excess of the electron spin diffusion length. A comparison of the experimental results with theory permits one to determine the average-spin diffusion length and electron-spin relaxation time.

Optical orientation of donor-bound excitons in nanosized InP/InGaP islands

Spin splitting of optically active and inactive excitons in nanosized n-InP/InGaP islands has been revealed. Optically inactive states become manifest in polarized-luminescence spectra as a result of excitons being bound to neutral donors (or of the formation of the trion, a negatively charged exciton) in InP islands. The exchange-splitting energies of the optically active and inactive states have been determined.

Long electron spin memory times in gallium arsenide

Extremely long electron spin memory times in GaAs are reported. It was established by the optical orientation method that the spin relaxation time of electrons localized at shallow donors in n-type gallium arsenide (Nd−NA≈1014 cm−3) is 290±30 ns at a temperature of 4.2 K. The exchange interaction of quasi-free electrons and electrons at donors suppresses the main spin-loss channel for electrons localized at donors—spin relaxation due to the hyperfine interaction with lattice nuclei.

Optical orientation and alignment of excitons in quantum dots

AbstractOptical orientation and alignment of excitons in InAlAs quantum dots in the AlGaAs matrix have been studied both theoretically and experimentally. Experiments performed in a longitudinal magnetic field (Faraday geometry) reveal transformation of optical orientation to alignment and alignment to orientation, which is caused by exchange splitting of the dipole-active exciton doublet and allowed by the quantum-dot low symmetry. A comparison of theory with experiment made with inclusion of the anisotropy of exciton generation and recombination along the

Dynamic self-polarization of nuclei in low-dimensional systems

[1\bar 10]

Nuclear Spin relaxation mediated by Fermi-edge electrons in n -type GaAs

and [110] axes permits one to determine the character of dipole distribution in direction for resonant optical transitions in the self-organized quantum-dot ensemble studied.

Integrating magnetism into semiconductor electronics

It is shown that the exchange coupling in a “ferromagnet/semiconductor quantum well” heterostructure allows the electric control of the orientation of magnetic moment in the ferromagnet. A highly anisotropic exchange interaction between holes in the quantum well and magnetic atoms in the ferromagnet causes the orientational transition: magnetic moment leaves the plane and becomes oriented along the normal. The normal component of magnetization can be inverted by applying voltage pulses to the structure gate.

Optical orientation study of thin ferromagnetic films in a ferromagnet/semiconductor structure

A mechanism of dynamic self-polarization of nuclei is studied which is weakly temperature-dependent and operates efficiently in low-dimensional systems (quantum wells, quantum dots). It is due to the hyperfine interaction of nuclei with excitons whose spin polarization is artificially maintained at zero (by illuminating with unpolarized light) but for which nonequilibrium alignment occurs. Nuclear self-polarization arises as a result of the conversion of the alignment of excitons into nuclear orientation in the effective magnetic field of the polarized nuclei.