V. M. Naik

Mobility enhancement and highly efficient gating of monolayer MoS 2 transistors with polymer electrolyte

We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte (PE) consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and channel mobility booster. We find that bare MoS2 devices (without PE) fabricated on Si/SiO2 have low channel mobility and large contact resistance, both of which severely limit the field-effect mobility of the devices. A thin layer of PEO/LiClO4 deposited on top of the devices not only substantially reduces the contact resistance but also boost the channel mobility, leading up to three-orders-of-magnitude enhancement of the field-effect mobility of the device. When the PE is used as a gate medium, the MoS2 field-effect transistors exhibit excellent device characteristics such as a near ideal subthreshold swing and an on/off ratio of 106 as a result of the strong gate-channel coupling.

Ferromagnetism and spin-polarized charge carriers in In2 O3 thin films

We present evidence for spin-polarized charge carriers in

Optical and electrical properties of Al1−xInxN films grown by plasma source molecular-beam epitaxy

{\text{In}}_{2}{\text{O}}_{3}

Bandgap engineering by tuning particle size and crystallinity of SnO2-Fe2O3 nanocrystalline composite thin films

films. Both

Microstructure of low temperature grown AlN thin films on Si(111)

{\text{In}}_{2}{\text{O}}_{3}

Room temperature ferromagnetism in Cr-doped In2O3 on high vacuum annealing of thin films and bulk samples

and Cr doped

Room temperature ferromagnetism in spin-coated anatase- and rutile-Ti0.95Fe0.05O2 films

{\text{In}}_{2}{\text{O}}_{3}

Temperature dependence of mobility and carrier density in InN films

films exhibit room-temperature ferromagnetism after vacuum annealing, with a saturation moment reaching approximately

Raman scattering studies of magnetic Co-doped ZnO thin films

0.5\text{ }\text{emu}/{\text{cm}}^{3}

Phase transitional studies of polycrystalline Pb0.4Sr0.6TiO3 films using Raman scattering

for the Cr doped samples. We used point contact Andreev reflection measurements to directly determine the spin polarization, which was found to be approximately