V. N. Kolobanov

Optical and luminescent properties of anisotropic tungstate crystals

Features of the reflectivity spectra in the fundamental absorption region were analysed for a series of tungstates. The contribution of electronic states of cations to the formation of the bottom of the conduction band and the top of the valence band is demonstrated. Its relation with the dominant mechanism of the energy transfer to the emission centres and the nature of these centres is discussed.

Optical and luminescence properties of CdWO4 and CdWO4:Mo single crystals

Luminescence properties of a pure CdWO4 crystal and a CdWO4:Mo crystal doped with molybdenum in different concentrations have been investigated. The effect of molybdenum impurity on the intrinsic luminescence of CdWO4 has been found, and the role of the impurity in the formation of new luminescence centers has been investigated. The features of the formation of the intrinsic and impurity luminescence excitation spectra of CdWO4 and CdWO4:Mo crystals in the fundamental-absorption region have been considered. The reflection spectra of the CdWO4 crystal have been investigated taking into account the crystal structure anisotropy.

Luminescence peculiarities and optical properties of MgMoO4 and MgMoO4:Yb crystals

Magnesium molybdate is considered as a promising material for cryogenic scintillation bolometers. The luminescence properties of MgMoO4 have been investigated on single crystals grown from melts of stoichiometric and nonstoichiometric compositions and on crystals doped with Yb3+ ions. Their optical properties are interpreted taking into account the anisotropy of the MgMoO4 crystal structure.

Luminescence of excitons and antisite defects in Lu3Al5O12:Ce single crystals and single-crystal films

The luminescence of excitons and antisite defects (ADs) was investigated, as well as the specific features of the excitation energy transfer from excitons and ADs to the activator (Ce3+ ion) in phosphors based on Lu3Al5O12:Ce (LuAG:Ce) single crystals and single-crystalline films, which are characterized by significantly different concentrations of ADs of the LuAl3+ type and vacancy-type defects. The luminescence band with λmax = 249 nm in LuAG:Ce single-crystal films is due to the luminescence of self-trapped excitons (STEs) at regular sites of the garnet lattice. The excited state of STEs is characterized by the presence of two radiative levels with significantly different transition probabilities, which is responsible for the presence of two excitation bands with λmax = 160 and 167 nm and two components (fast and slow) in the decay kinetics of the STE luminescence. In LuAG:Ce single crystals, in contrast to single-crystal films, the radiative relaxation of STEs in the band with λmax = 253.5 nm occurs predominantly near LuAl3+ ADs. The intrinsic luminescence of LuAG:Ce single crystals at 300 K in the band with λmax = 325 nm (τ = 540 ns), which is excited in the band with λmax = 175 nm, is due to the radiative recombination of electrons with holes localized near LuAl3+ ADs. In LuAG:Ce single crystals, the excitation of the luminescence of Ce3+ ions occurs to a large extent with the participation of ADs. As a result, slow components are present in the luminescence decay of Ce3+ ions in LuAG:Ce single crystals due to both the reabsorption of the UV AD luminescence in the 4f-5d absorption band of Ce3+ ions with λmax = 340 nm and the intermediate localization of charge carriers at ADs and vacancy-type defects. In contrast to single crystals, in phosphors based on LuAG:Ce single-crystal films, the contribution of slow components to the luminescence of Ce3+ ions is significantly smaller due to a low concentration of these types of defects.

Luminescence spectroscopy of excitons and antisite defects in Lu3Al5O12 single crystals and single-crystal films

The nature of the intrinsic luminescence of the lutetium aluminum garnet Lu3Al5O12 (LuAG) has been analyzed on the basis of time-resolved spectral kinetic investigations upon excitation of two model objects, LuAG single crystals and single-crystal films, by pulsed X-ray and synchrotron radiations. Due to the differences in the mechanisms and methods of crystallization, these objects are characterized by significantly different concentrations of LuAl antisite defects. The energy structure of luminescence centers in LuAG single crystals (self-trapped excitons (STEs), excitons localized near antisite defects, and LuAl antisite defects) has been established. For single-crystal LuAG films, grown by liquid-phase epitaxy from a Pb-containing flux, the energy parameters of the following luminescence centers have been determined: STEs in regular (unperturbed by the presence of antisite defects) sites of the garnet lattice and excitons localized near Pb2+ ions. The structure of the luminescence centers, related to the background emission of impurity Pb2+ ions, has also been established in the UV and visible ranges. It is suggested that, in contrast to the two-halide hole self-trapping, a self-trapped state similar to STEs in simple oxides (Al2O3, Y2O3) is formed in LuAG; this state is formed by self-trapped holes in the form of singly charged O− ions and electrons localized at excited levels of Lu3+ cations.

Anisotropy of optical properties of scheelite tungstates in the fundamental absorption region

Reflectivity spectra ofsingle crystals ofCa, Ba and Pb tungstates in the energy range 4–30 eV are presented. Anisotropy ofscheelite structure is studied on this set ofcrystals f or their different orientations using polarised

Luminescence of excitons in single-crystal garnets

Comparative studies of the luminescence of Y3Al5O12:Ce and Lu3Al5O12:Ce single-crystal films and their volume analogues—Y3Al5O12 and Y3Al5O12:Ce single crystals, excited by synchrotron radiation with energy E=120–150 eV, have been performed. The films were grown from melt-solution by liquid-phase epitaxy and the crystals were grown from melt. The single-crystal films and single crystals studied are characterized by different degrees of structural order, in particular, different concentrations of substitutional defects of the YAl3+ and LUAl3+ types. It was ascertained that the bands at 260 and 250 nm in the intrinsic luminescence spectra of Y3Al5O12:Ce and Lu3Al5O12:Ce single-crystal films and single crystals are due to the emission of self-trapped excitons. The luminescence band with λmax=300 nm and τ=0.36 μs, which is present in the luminescence spectrum of single crystals and absent in the spectra of single-crystal films, is due to the recombination of electrons with holes localized at YAl3+ centers. It is shown that an efficient energy transfer by excitons to activator ions occurs in Y3Al5O12 and Lu3Al5O2 single-crystal films doped with Ce3+ ions.

Study of optical and luminescent properties of some inorganic scintillators in the fundamental absorption region

The relaxation of electronic excitations in scintillating crystals is discussed in terms of recombination of correlated and stochastic electronic excitations. The effects of impurities and excitation density on the intrinsic luminescence yield in the fundamental absorption range and luminescence spectra are analyzed.

Station for VUV-spectroscopy at beam line M of the storage ring Siberia-I

Abstract The station for solid state VUV-spectroscopy on the dedicated SR source Siberia-I of the Kurchatov Institute, USSR, is described. The station consists of a beam line, vacuum normal-incidence primary Wadsworth monochromator, sample chamber, secondary monochromator and a computer control system. Characteristics of the optical scheme are discussed. The experimental procedure in the VUV range is described.

Intrinsic and

Intrinsic and Ce-related luminescence of LuAP:Ce single crystalline films (SCF) in comparison with their bulk single crystal (SC) analogs were analyzed for the first time using the time-resolved luminescence spectroscopy under synchrotron radiation excitation. Difference in luminescent properties of SCF and SC are due to the absence of the Lu-at-Al-site antisite defects (AD) and extremely low concentration of vacancy-type defects (VD) in SCF. SCF contamination by Pb ions from flux is noted, which gives rise to an additional emission band in UV range. In SCF, the absence of emission and trapping centers formed by the mentioned AD and VD can explain their favorable timing characteristics with respect to SC. The role of trace impurities in LuAP-based SCF scintillators is considered as well.