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Dive into the research topics where V.N. Matveev is active.

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Featured researches published by V.N. Matveev.


Thin Solid Films | 1993

The structure and electromigration behaviour of aluminium films deposited by the partially ionized beam technique

L.K. Fionova; O.V. Kononenko; V.N. Matveev

Abstract High purity aluminium films were deposited by the partially ionized beam technique. The structure of the films was investigated by transmission electron microscopy. The influences of the accelerating voltage and subsequent annealing on the average grain size, grain size distribution, texture and grain boundary morphology were studied. It was observed that the appearance of a large number of special grain boundaries in the annealed films deposited with an accelerating voltage increased the electromigration interruption lifetimes of the films.


Bulletin of The Russian Academy of Sciences: Physics | 2014

Structure of graphene nanotube hybrid materials produced via single-stage CVD

V.N. Matveev; V. I. Levashov; O. V. Kononenko; D. V. Matveev; V. T. Volkov; Ya. B. Volkova; I. I. Khodos

The structures of graphene layer-carbon nanotube hybrid films produced via CVD with a single-stage flow of acetylene into a chamber containing a prepared substrate are studied. It is shown that such films have a hybrid double-layer structure consisting of a graphene layer and a dense continuous network of nanotubes. The graphene layer contains continuous extended areas 10–50 μm in size and island areas ∼0.1 μm in size. TEM images lead to the conclusion that the graphene layer and carbon nanotubes are bound by covalent bonds.


Bulletin of The Russian Academy of Sciences: Physics | 2010

Selective growth of single-wall carbon nanotubes and the fabrication of devices on their basis

O. V. Kononenko; V.N. Matveev; Yu. A. Kasumov; I. I. Khodos; D. V. Matveev; S. I. Bozhko; V. T. Volkov; M. A. Knyazev; A. A. Firsov; A. I. Il’yun

Single-wall carbon nanotubes were synthesized on specified parts of oxidized silicon substrates by single acetylene burst CVD and studied with high-resolution scanning electron and scanning probe micro-scopes. The resistance of individual nanotubes and nanotube series was measured using devices fabricated by the deposition of Pd and Pd/Al electrodes on the obtained single-wall nanotubes. The contact potential difference between Pd electrodes and carbon nanotubes was measured in the Kelvin mode of a scanning probe microscope.


Bulletin of The Russian Academy of Sciences: Physics | 2010

The effect of catalyst nanoparticle preparation techniques on the structure of carbon nanotubes

Yu. A. Kasumov; I. I. Khodos; V.N. Matveev; V. T. Volkov

The effect of the composition, deposition method, and preliminary annealing temperature of catalyst thin films on the structure of catalyst nanoparticles and carbon nanotubes synthesized by CVD with a single acetylene burst was studied. A catalyst preparation technique was found that yields the narrowest distribution of the diameters of nanoparticles and of single-wall carbon nanotubes grown on them.


Applied Physics A | 2007

CVD growth of carbon nanotubes at very low pressure of acetylene

Yu. A. Kasumov; A. Shailos; I. I. Khodos; V. T. Volkov; V.I. Levashov; V.N. Matveev; S. Guéron; Mathias Kobylko; Mathieu Kociak; H. Bouchiat; V. Agache; A.S. Rollier; L. Buchaillot; A.M. Bonnot; A. Kasumov


Scripta Metallurgica Et Materialia | 1995

Electromigration activation energy in pure aluminum films deposited by partially ionized beam technique

O. V. Kononenko; E.D. Ivanov; V.N. Matveev; I. I. Khodos


Thin Solid Films | 2011

Extraordinary Hall effect in nanoscale nickel films

V. T. Volkov; V.I. Levashov; V.N. Matveev; L. Matveeva; I. I. Khodos; Yu. A. Kasumov


Scripta Metallurgica Et Materialia | 1992

The structure of aluminum films deposited by partially ionized beam

L.K. Fionova; O.V. Kononenko; V.N. Matveev


Materials Letters | 2015

Hall effect sensors on the basis of carbon material

V.N. Matveev; V.I. Levashov; O. V. Kononenko; D. V. Matveev; Yu. A. Kasumov; I. I. Khodos; V. T. Volkov


Physical Review Letters | 1996

Anomalous Proximity Effect in the Nb-BiSb-Nb Junctions.

A. Yu. Kasumov; O. V. Kononenko; V.N. Matveev; T. B. Borsenko; V. A. Tulin; E. E. Vdovin; I. I. Khodos

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I. I. Khodos

Russian Academy of Sciences

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O. V. Kononenko

Russian Academy of Sciences

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V. T. Volkov

Russian Academy of Sciences

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Yu. A. Kasumov

Russian Academy of Sciences

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D. V. Matveev

Russian Academy of Sciences

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V.I. Levashov

Russian Academy of Sciences

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V. A. Tulin

Russian Academy of Sciences

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A. Kasumov

University of Paris-Sud

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A. Shailos

University of Paris-Sud

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