V.O. Vas'kovskiy

Spin-valve structures with Co/Tb-based multilayers

The influence of the thickness of layers on magnetic properties of {Co-Tb}/sub n/, {Co-Tb}/sub n/-Co, and {Co-Tb}/sub n/-Co-Cu-Co films was investigated. The dependencies of magnetic hysteresis and magnetoresistive properties of {Co(1 nm)-Tb(1 nm)}n-Co(5 nm)-Cu(L/sub Cu/)-Co(5 nm) structures on the thickness of the {Co-Tb}/sub n/ layer and Cu spacer were obtained. The possibility of creating of spin-valve structures based of multilayered {Co-Tb}/sub n/ films with in-plane magnetic anisotropy was shown.

Thermo-sensitive spin valve based on layered artificial ferrimagnet

In this work, the temperature and magnetic field dependences of magnetic and magnetoresistive properties of Gd-Co/Co/Cu/Co spin valves were comparatively analyzed. It was observed that the Gd-Co/Co bilayer structure exhibited macroscopic ferrimagnetic behavior. It was shown that the temperature dependence of magnetization of Gd-Co/Co layered artificial ferrimagnet could be the basis for the creation of a thermo-sensitive spin valve.

Temperature Stability of Exchange Bias Field and Magnetoresistance of Fe 20 Ni 80 Layer in Fe 20 Ni 80 /Tb–Co Films

The evolution of hysteresis and magnetoresistive properties of exchange-coupled Fe20Ni80/Tb-Co bilayers with modified interface was investigated in the temperature range from 79 to 450 K. Exchange bias field was shown to decrease monotonously with increasing temperature, demonstrating a very similar behavior for unmodified films and samples with ultrathin Ti spacer or selectively annealed permalloy layer. The observed dependence, therefore, is mostly attributed to the changes of the Tb-Co layers magnetization and magnetic anisotropy. Anisotropic magnetoresistance (AMR) value measured on all samples shown typical for the permalloy alloy reduction at higher temperatures regardless of the samples type. A simultaneous decrease of the exchange bias field and the value of the AMR effect was shown to open the possibility for the compensation of the temperature dependence of the mediums response to the application of the external magnetic field.

Antidot patterned single and bilayer thin films based on ferrimagnetic Tb-Co alloys with tailored magnetic anisotropy

Introduction of periodically arranged nanoscale holes is an effective way of tuning the magnetic anisotropy and coercivity of magnetic films [1].

Optimization of Functional Parameters of Magnetoresistive Fe 20 Ni 80 /Fe 50 Mn 50 /Fe 20 Ni 80 Films

In this paper, the effect of some technological and physical factors on properties of SiO₂/Ta/Fe₂₀Ni₈₀/Fe₅₀Mn₅₀ and SiO₂/Ta/Fe₂₀Ni₈₀/Fe₅₀Mn₅₀/Fe₂₀Ni₈₀/Ta films, having the anisotropic magnetoresistance (AMR) effect, was investigated. The purpose of this paper was to find the optimum conditions for realization of the peak magnetic biasing in thick (>30 nm) permalloy layers. Essential influence of the protective Ta layer on the achievement of the optimal combination of properties of multilayer AMR films with exchange coupling is shown. Dependences of the exchange bias field (H_ex) and maximum derivation of resistance with respect to magnetic field (dR/dH)_max on the thickness of functional permalloy layers are investigated. The preproduction prototypes of a sensor are produced and sensor transformation function is investigated.