V. Orsi Gordo

Visible to infrared low temperature luminescence of Er3+, Nd3+ and Sm3+ in CaSnO3 phosphors

Novel stannate phosphor, orthorhombic CaSnO3 phosphors doped with Er(3+), Nd(3+) and Sm(3+) have been synthesized by a conventional solid-state method under N2+H2 gas flow. Visible and near-infrared photoluminescence (PL) properties were investigated as function of laser power and temperature. It was observed that all dopant ions are well incorporated in CaSnO3 and are responsible for the optical emission in the temperature range of 10-300K. PL peaks at 490, 546, 656, 696, 894, 1065, and 1344nm were observed for the CaSnO3:Nd(3+) phosphor and associated to f-f transition of Nd(3+) ion. Emissions at 564, 600-607, 646-656 and 714nm were detected for the CaSnO3:Sm(3+). The strongest one, observed at 600nm, was associated to (4)G5/2→(6)H7/2 of Sm(3). Emission lines at 528, 548, 662 at 852nm were also seen for CaSnO3:Er(3+) and correspond to Er(3+) intra-4f(n) shell transitions. In addition, at low temperatures, a stark splitting of the 4f electron energy levels of the Er(3+) ions were observed in infrared region (1520-1558nm) and assigned to the transition between the (4)I13/2 state and the (4)I15/2 state. Finally, our results show that the rare earth doped CaSnO3 has remarkable potential for applications as optical material since it exhibits efficient and sharp emissions due to rare earth ions.

Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response

We investigated effects of localization and strain on the optical and magneto-optical properties of diluted nitrogen III–V quantum wells theoretically and experimentally. High-resolution x-ray diffraction, photoluminescence (PL), and magneto-PL measurements under high magnetic fields up to 15 T were performed at low temperatures. Bir-Pikus Hamiltonian formalism was used to study the influence of strain, confinement, and localization effects. The circularly polarized magneto-PL was interpreted considering localization aspects in the valence band ground state. An anomalous behavior of the electron-hole pair magnetic shift was observed at low magnetic fields, ascribed to the increase in the exciton reduced mass due to the negative effective mass of the valence band ground state.

Optical and spin properties of localized and free excitons in GaBixAs1-x/GaAs multiple quantum wells

Raman spectroscopy and magneto-photoluminescence measurements under high magnetic fields were used to investigate the optical and spin properties of GaBiAs/GaAs multiple quantum wells (MQWs). An anomalous negative diamagnetic energy shift was observed at higher temperatures and higher laser intensities, which was associated to a sign inversion of hole effective mass in these structures. In addition, an enhancement of the polarization degree with decreasing of laser intensity was observed (experimental condition where the emission is dominated by localized excitons). This effect was explained by changes of spin relaxation and exciton recombination times due to exciton localization by disorder.