V. P. Kladko

Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes

The thermal limits of the two-drift impact avalanche and transit-time (IMPATT) diode operating in the pulsed mode in the 8-mm wavelength region with a microwave power as high as 30–35 W have been estimated. It is shown that p-n junction overheat at an operating pulse length of 300 ns and a supply current amplitude of 11.3–15 A amounts to 270–430°C relative to an ambient medium. The temperature limit of junction overheating, above which IMPATT diodes rapidly degrade, was determined as 350°C. The presented results of X-ray phase analysis and depth profiles of Au-Pt-Ti-Pd-Si ohmic contact components confirm thermal limits of the IMPATT diode operating in the pulsed mode.

Role of paramagnetic defects in light emission processes in Y-doped ZrO2 nanopowders

Luminescence and structural properties of pure and Y-doped ZrO2 nanopowders with different Y content synthesized by co-precipitation of Zr and Y salts were investigated by x-ray diffraction, transmission electron microscopy, electron paramagnetic resonance (EPR) and photoluminescence (PL) methods. It was found that at constant calcination temperature (700 °С), the increase of Y content stimulates the transformation of crystalline phase from monoclinic through the tetragonal to the cubic one. Generally, room temperature PL emission was found to be similar for the samples with different Y content, demonstrating the same overlapped PL components in visible spectral range under extrinsic excitation. The relative contribution of each PL component was found to be affected by calcination time. In EPR spectra of as-prepared samples no signals were observed. The annealing in N2 or H2 flow results in the appearance of the signal from surface Zr3+ defects. In the latter the signal assigned to F-center also arises. The anti-correlation observed between the PL intensity and the value of the Zr3+ EPR signal allows us to conclude that the Zr3+ center is the center of fast non-radiative recombination. At the same time, interrelation between the intensity of the EPR signal assigned to F-centers and observed PL bands was not found.

The mechanism of contact-resistance formation on lapped n-Si surfaces

Anomalous temperature dependences of the specific contact resistance ρc(T) of Pd2Si-Ti-Au ohmic contacts to lapped n-Si with dopant concentrations of 5 × 1016, 3 × 1017, and 8 × 1017 cm−3 have been obtained. The anomalous dependences of ρc(T) have been accounted for under the assumption that the current flows along nanodimensional metallic shunts, which are combined with dislocations with a diffusionrelated limit in the supply of charge carriers taken into account. The densities of conducting and scattering dislocations in the surface region of the semiconductor are determined.

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure

High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the InxGa1 − xN/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax at the heterointerface between the thick GaN buffer layer and InxGa1 − xN/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission intensity of the InxGa1 − xN quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting the high efficiency of trapping of charge carriers by the quantum well.

Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si

The temperature dependence of contact resistivity ρc in lapped silicon specimens with donor concentrations of 5u2009×u20091016, 3u2009×u20091017, and 8u2009×u20091017u2009cm−3 was studied experimentally. We found that, after decreasing part of the ρc(T) curve in the low temperature range, an increasing part is registered with increasing temperature T. It is demonstrated that the formation of contact to a lapped Si wafer results in the generation of high dislocation density in the near-surface region of the semiconductor and also in ohmic contact behavior. In this case, current flows through the metal shunts associated with dislocations. The theory developed is in good agreement with experimental results.

Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si 1 − x Ge x buffer layers

Atomic-force microscopy, micro-Raman spectroscopy, and high resolution X-ray diffraction are applied to study the spatial ordering in single layers of SiGe nanoislands grown on a strained Si1 − xGex buffer sublayer. It is shown that, apart from stimulating the spatial ordering of nanoislands, the introduction of a Si1 − xGex sublayer leads to an enhanced role for interdiffusion processes. An unusually high increase in the volume of nanoislands in the process of the epitaxy is related to the anomalously strong diffusion from the buffer sublayer into the islands that is induced by nonuniform fields of elastic strains. The anisotropy of the islands shape and spatial ordering is discussed in terms of the anisotropy of the diffusion processes in spatially nonuniform fields of elastic strains.

Features of ZnS-powder doping with a Mn impurity during synthesis and subsequent annealing

Luminescence, electron spin resonance, and X-ray diffraction (XRD) methods were used to investigate the features of ZnS-powder doped by Mn impurity during self-propagating high-temperature synthesis and subsequent annealing. The obtained powder consists of ZnS microcrystals with mainly hexagonal phase (80 ± 5)%. It was found, that after synthesis Mn presents not only in the form of non-uniformly distributed microscopic impurities in ZnS, but also in the form of Mn metal nanocrystals. Thermal annealing at 800°C leads to the additional doping of ZnS from metallic Mn, to the redistribution of the embedded Mn in the volume of microcrystals, and to the ZnS oxidation. At the same time, the ratio between the cubic and hexagonal phases does not change. It was shown that annealing causes a decrease in the concentration of the defects responsible for the luminescence-excitation bands, which correspond to transitions from the ground to the excited states of the Mn2+ ion. As a result of annealing, there is also a change in XRD coherent domain size. Simultaneously, the intensity of peaks in the luminescence-excitation spectrum with wavelengths of 375 and 395 nm was changed. The causes of these changes and the nature of the corresponding bands are discussed.

Radiation effects and interphase interactions in ohmic and barrier contacts to indium phosphide as induced by rapid thermal annealing and irradiation with γ-ray 60Co photons

The radiation resistance of Au-Pd-Ti-Pd-n++-InP ohmic contacts and Au-TiBx-n-n+-n++-InP barrier contacts—both initial and subjected to a rapid thermal annealing and irradiated with 60Co γ-ray photons with doses as high as 109 R—has been studied. Before and after external effects, the electrical characteristics of the barrier and ohmic contacts, distribution profiles for components, and phase composition in the metallization layers have been measured. In ohmic Pd-Ti-Pd-Au contacts subjected to rapid thermal annealing and irradiation, a significant distortion of the layered structure of metallization occurs; this distortion is caused by the thermal and irradiation-stimulated transport of Pd over the grain boundaries in polycrystalline Ti and Au films. However, the specific contact resistance ρc does not change appreciably, which is related to a comparatively unvaried composition of the contact-forming layer at the Pd-n+-InP interface. In the initial sample and the sample subjected to the rapid thermal annealing at T = 400°C with the Au-TiBx-n-n+-n++-InP barrier contacts and irradiated with the dose as high as 2 × 108 R, a layered structure of metallization is retained. After irradiation with the dose as high as 109 R, in the samples subjected to a rapid thermal annealing at T = 400°C, the layered structure of metallization becomes completely distorted; however, this structure is retained in the initial sample. The electrical properties of the contact structure appreciably degrade only after irradiation of the sample preliminarily subjected to a rapid thermal annealing at T = 400°C.

Structural and optical properties of ZnS:Mn micro-powders, synthesized from the charge with a different Zn/S ratio

The influence of Zn/S ratio in the charge on structural and optical properties of ZnS:Mn powders produced by high-temperature self-propagated synthesis was investigated. The samples was shown to consist of mixed-polytypes ZnS crystallites with hexagonal (2H) and cubic (3C) phases, the contribution of the latter increases with the sulfur content in the charge. The most homogeneous size distribution were found at stoichiometric Zn/S ratio. The Zn/S relation affects the Mn incorporation into ZnS lattice. The highest quantity of incorporated Mn is observed at stoichiometric Zn/S relation while lowest one is realized at Zn excess. Besides, the distribution of manganese ions in the blocks, which compose the crystallites, was found to be inhomogeneous, their concentration decreases from crystallites surface to the depth. Mn ions are nearer to the surface in ZnS:Mn synthesized with Zn excess. At Mn concentration in the charge of 1xa0wt% the shift of ZnS band edge to low energy side is observed, that is ascribed to formation of solid solution ZnS–MnS with lower band gap value.

Effect of Li + co-doping on structural and luminescence properties of Mn 4+ activated magnesium titanate films

The effect of Li+ co-doping on crystal phase formation and photoluminescence (PL) of Mn4+ activated magnesium titanate films produced by a solid state reaction method at different temperatures (800–1200xa0°C) has been investigated by using X-ray diffraction (XRD), diffuse reflectance and PL spectroscopy. The chemical composition of sintered films was estimated by energy dispersive X-ray spectroscopy. The concentration of Mn impurity estimated by Electron spin resonance was about 5xa0×xa01016 cm−3. The XRD study of the annealed films revealed several magnesium titanate crystal phases, such as Mg2TiO4, MgTiO3 and MgTi2O5. The contribution of each phase depended strongly on the annealing temperature and the presence of Li+ additive. Furthermore, Li+ co-doping facilitated the formation of both MgTiO3 and Mg2TiO4 phases, especially at lower annealing temperatures. The PL spectra showed two bands centered at 660 and 710xa0nm and ascribed to the 2Exa0→xa04A2 spin-forbidden transition of the Mn4+ ion in the Mg2TiO4 and MgTiO3, respectively. In Li co-doped films, the integrated intensity of Mn4+ luminescence was found several times stronger compared to Li-undoped films that was ascribed mainly to flux effect of lithium.