V. Pillard
University of Paris-Sud
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Publication
Featured researches published by V. Pillard.
Physical Review B | 2013
Julien E. Rault; Guillaume Agnus; T. Maroutian; V. Pillard; Ph. Lecoeur; Gang Niu; Bertrand Vilquin; M. G. Silly; A. Bendounan; F. Sirotti; N. Barrett
The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO
Applied Physics Letters | 2013
Lamis Louahadj; D. Le Bourdais; L. Largeau; Guillaume Agnus; Lucie Mazet; Romain Bachelet; Philippe Regreny; David Albertini; V. Pillard; C. Dubourdieu; Brice Gautier; P. Lecoeur; G. Saint-Girons
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Physical Review B | 2013
Julien E. Rault; Guillaume Agnus; T. Maroutian; V. Pillard; Ph. Lecoeur; Gang Niu; Bertrand Vilquin; M. G. Silly; A. Bendounan; F. Sirotti; N. Barrett
/Nb-doped SrTiO
Physical Review B | 2011
D. Estève; T. Maroutian; V. Pillard; Ph. Lecoeur
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international conference on indium phosphide and related materials | 2014
Benjamin Meunier; Lamis Louahadj; D. Le Bourdais; L. Largeau; Guillaume Agnus; Lucie Mazet; Romain Bachelet; P. Regreny; D. Albertini; V. Pillard; C. Dubourdieu; B. Gautier; P. Lecoeur; G. Saint-Girons
, under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.
international service availability symposium | 2011
Bertrand Vilquin; Gang Niu; Shi Yin; Alexis S. Borowiak; G. Saint-Girons; Brice Gautier; Y. Robach; G. Hollinger; Weiwei Peng; Pascale Roy; V. Pillard; P. Lecoeur
Ferroelectric epitaxial Pb(Zr,Ti)O3 (PZT) layers were grown by pulsed laser deposition on SrTiO3/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO3/GaAs is abrupt at the atomic scale. The PZT layers contain a- and c-domains, as shown by X-Ray diffraction analyses. Piezoforce microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.
Physical Review B | 2011
D. Estève; T. Maroutian; V. Pillard; Ph. Lecoeur
In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a Pt/BaTiO
Microelectronic Engineering | 2011
Gang Niu; S. Yin; G. Saint-Girons; B. Gautier; P. Lecoeur; V. Pillard; G. Hollinger; Bertrand Vilquin
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Journal of Physical Chemistry C | 2012
J. L. Wang; F. Gaillard; Alexandre Pancotti; Brice Gautier; Gang Niu; Bertrand Vilquin; V. Pillard; G. L. M. P. Rodrigues; N. Barrett
/SrTiO
Thin Solid Films | 2012
Gang Niu; Brice Gautier; S. Yin; G. Saint-Girons; P. Lecoeur; V. Pillard; G. Hollinger; Bertrand Vilquin
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