V. S. Sulyaeva

Properties of BCxNy films grown by plasma-enhanced chemical vapor deposition from N-trimethylborazine-nitrogen mixtures

Boron carbonitride films of various compositions have been grown by plasma-enhanced chemical vapor deposition using N-trimethylborazine as a single-source precursor and nitrogen as a plasma gas and an additional nitrogen source. Experiments were performed at various deposition temperatures and rf powers. The films were characterized by ellipsometry, atomic force microscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, IR and Raman spectroscopies, synchrotron X-ray diffraction, energy dispersive X-ray microanalysis, and spectrophotometry. The results demonstrate that, under the conditions of this study, the growth kinetics and physicochemical properties of boron carbonitride layers are influenced by both the substrate temperature and rf power. Conditions are found for producing boron carbonitride films transparent in the UV through visible spectral region.

X-ray photoelectron and auger spectroscopic study of the chemical composition of BC x N y films

X-ray photoelectron and Auger spectroscopy are used to investigate the chemical composition of BCxNy films synthesized by PECVD from different initial gas mixtures in the temperature range 473–723 K. Main principles and features of the film formation are found. It is shown that the chemical composition of BCxNy films significantly depends on the synthesis parameters, which enables targeted control of their physical properties. The obtained data are discussed.

Thermodynamic modeling of BCxNy chemical vapor deposition from mixtures of N-trimethylborazine and nitrogen

Thermodynamic modeling of the chemical vapor deposition of boron-carbonitride-based films in the B-C-N-H-O system using mixtures of N-trimethylborazine and nitrogen is carried out for reduced pressures (13.3 and 1.33 Pa) and a wide temperature range (300–1300 K). The source of oxygen impurities in this system is a residual pressure of 0.40 Pa. The results indicate that films of various compositions can be grown. The conditions for the deposition of BCxNy films are identified.

Analysis features of elemental composition of boron carbonitride films by EDS

Features of the analysis of elemental composition of thin boron carbonitride films by energy dispersive X-ray spectroscopy are discussed. The films are also studied by IR spectroscopy and scanning electron microscopy in order to obtain data on their elemental composition, types of chemical bonds, and surface morphology. The effect of film thickness and electron beam energy on the results of energy dispersive X-ray spectroscopy is also investigated.

Characterization of Thin Boron and Silicon Carbonitride Films by Wavelength Dispersive Spectroscopy

Results concerning a quantitative determination of elemental composition of films consisting of light elements based on the use of wavelength dispersive spectroscopy (WDS) and energy dispersive spectroscopy are presented. The films were previously studied using IR spectroscopy, ellipsometry, scanning electron microscopy, and energy dispersive spectroscopy, to obtain data on the elemental composition, chemical bonding types, thickness, and surface morphology of the films. Standards for each element have been chosen, and parameters for electron microscopy analysis, such as accelerating voltage and amperage, are experimentally established. Using the WDS technique for studying the composition of boron and silicon carbonitride films is demonstrated to be advantageous.

Synthesis of Zirconium Diboride Films and ZrB 2 /BC x N y Heterostructures

Using mechanochemical synthesis, we have prepared zirconium borohydride, Zr(BH4)4, as a precursor for ZrB2 film growth by chemical vapor deposition. We have carried out the thermodynamic modeling of phase formation processes in the Zr–B–(N)–H and Zr–B–(N)–H–O systems in a wide temperature range, from 100 to 2500°C, at various p(H2)/p(Zr(BH4)4) and p(NH3)/p(Zr(BH4)4) partial pressure ratios in the starting gas mixtures. A process has been proposed for the growth of zirconium diboride films by Zr(BH4)4 decomposition using two techniques: chemical vapor deposition and plasma-enhanced chemical vapor deposition. We also developed a process for the growth of multilayer ZrB2-and BCxNy-based structures.

Thermal Decomposition of Trimethylamine Borane As a Precursor to Nanocrystalline CVD BC x N y Films

We have studied the kinetics of BCxNy chemical vapor deposition through trimethylamine borane decomposition at atmospheric pressure. The rate constant of the heterogeneous interaction between trimethylamine borane and an adsorption center has been determined to be ks0 = 2.7 × 107exp(−10560/T) cm/s. The obtained kinetic parameters of the reaction fully determine the growth rate of nanocrystalline carbonitride films under kinetic control. The film thickness has been determined as a function of time, temperature, reactant concentration, and reactor dimensions.