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Dive into the research topics where V.S. Vendamani is active.

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Featured researches published by V.S. Vendamani.


Journal of Applied Physics | 2018

Three-dimensional hybrid silicon nanostructures for surface enhanced Raman spectroscopy based molecular detection

V.S. Vendamani; S. V. S. Nageswara Rao; S. Venugopal Rao; D. Kanjilal; A. P. Pathak

Three-dimensional silver nanoparticles decorated vertically aligned Si nanowires (Si NWs) are effective surface-enhanced Raman spectroscopy (SERS) substrates for molecular detection at low concentration levels. The length of Si NWs prepared by silver assisted electroless etching is increased with an increase in etching time, which resulted in the reduced optical reflection in the visible region. These substrates were tested and optimized by measuring the Raman spectrum of standard dye Rhodamine 6G (R6G) of 10 nM concentration. Further, effective SERS enhancements of ∼105 and ∼104 were observed for the cytosine protein (concentration of 50 μM) and ammonium perchlorate (oxidizer used in explosives composition with a concentration of 10 μM), respectively. It is established that these three-dimensional SERS substrates yielded considerably higher enhancement factors for the detection of R6G when compared to previous reports. The sensitivity can further be increased and optimized since the Raman enhancement was...


APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: Twenty‐First International Conference | 2011

Ion Beam Studies Of Semiconductor Nanoparticles For The Integration Of Optoelectronic Devices

S.V.S. Nageswara Rao; V.S. Vendamani; Sandeep K. Satrasala; Santanu K. Padhe; K. Srinadha Rao; S. Dhamodaran; Anand P. Pathak

Radiation hardened microelectronics compatible and tunable light emitting devices are essential for the integration of electronic and optoelectronic devices. Porous or nano‐crystalline silicon seems to be a promising material for accomplishing this task. Ion beam patterned structures of light emitting silicon nanoparticles can be used for achieving multiple wavelength emission. Here we present a study on the influence of oxidation, pre and post anodization irradiation on emission parameters and on the stability of passivating bonds of porous silicon.


DAE SOLID STATE PHYSICS SYMPOSIUM 2016 | 2017

Ion induced effects on the dissociation of silicon nanoparticles

V.S. Vendamani; S. V. S. Nageswara Rao; Syed Hamad; S. Venugopal Rao; Anand P. Pathak

We report a detailed study on the dissociation of isolated silicon nanoparticles under high energy ion irradiation. Ultra-small (1-10 nm) colloidal silicon nanoparticles (Si NPs) have been synthesized by ablating porous silicon (pSi) in acetone using femtosecond laser pulses. Porous silicon was ablated, considering the fact that it contains a large number of light emitting silicon nanoparticles. The shape and size distribution of Si NPs was investigated by Transmission Electron Microscopy (TEM). The crystallinity of spherical Si NPs was confirmed by Selective Area Electron Diffraction (SAED).


Radiation Effects and Defects in Solids | 2012

Anharmonic effects on positron channeling angular scans and dechanneling due to stacking faults and platelets

V.S. Vendamani; S. Balamuragan; V. Saikiran; Anand P. Pathak; S. V. S. Nageswara Rao

Energy dependence studies of channeling angular scans and dechanneling probabilities are essential for defect analysis. We have recently shown that the dechanneling probability of positrons due to stacking faults need not necessarily be independent of incident energy. Here we study the energy dependence relations for positron channeling angular scans and dechanneling probability due to stacking faults and platelets under the influence of anharmonic continuum potential. The anharmonic term in the transverse potential is considered as perturbation to harmonic approximation. Energy dependence relations obtained in this study are found to be consistent with those obtained in harmonic approximation. Further, the dechanneling probability due to platelets is found to increase with the increase in energy and saturates for higher energies. This study further suggests that the dechanneling probability due to platelets is also independent of energy in classical regime as is known for simple stacking faults.


Journal of Physical Chemistry C | 2014

Femtosecond Ablation of Silicon in Acetone: Tunable Photoluminescence from Generated Nanoparticles and Fabrication of Surface Nanostructures

Syed Hamad; G. Krishna Podagatlapalli; V.S. Vendamani; S. V. S. Nageswara Rao; A. P. Pathak; Surya P. Tewari; S. Venugopal Rao


Journal of Materials Science | 2015

Synthesis of ultra-small silicon nanoparticles by femtosecond laser ablation of porous silicon

V.S. Vendamani; Syed Hamad; V. Saikiran; Anand P. Pathak; S. Venugopal Rao; V.V. Ravi Kanth Kumar; S. V. S. Nageswara Rao


Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms | 2013

Structural and optical properties of porous silicon prepared by anodic etching of irradiated silicon

V.S. Vendamani; S. V. S. Nageswara Rao; Anand P. Pathak


Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms | 2014

150 MeV Au ion induced modification of Si nanoparticles prepared by laser ablation

V. Saikiran; V.S. Vendamani; Syed Hamad; S. V. S. Nageswara Rao; S. Venugopal Rao; Anand P. Pathak


Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms | 2010

Energy dependence relations for positron channeling critical angle and dechanneling probability due to stacking faults

V.S. Vendamani; S.V.S. Nageswara Rao


Optical Materials | 2015

Blue luminescent silicon nanoparticles synthesized from free-standing porous silicon layer by ultrasonic treatment

V.S. Vendamani; A. P. Pathak; S. V. S. Nageswara Rao

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A. P. Pathak

University of Hyderabad

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Syed Hamad

University of Hyderabad

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V. Saikiran

University of Hyderabad

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