V. T. Bublik
National University of Science and Technology
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Publication
Featured researches published by V. T. Bublik.
Physics of the Solid State | 2013
M. A. Borik; V. T. Bublik; A. V. Kulebyakin; E. E. Lomonova; F. O. Milovich; V. A. Myzina; V. V. Osiko; S. V. Seryakov; N. Yu. Tabachkova
The phase composition and morphology of the twin structure of the Y2O3-stabilized zirconia crystals (from 2.8 to 4.0 mol %) after the thermal treatment at 1600°C have been investigated by X-ray diffractometry and transmission electron microscopy. It is shown that as the concentration of the stabilizing Y2O3 impurity increases, the character of the twin structure changes, and the amount of the untransformed phase t′ increases. The dependence of the hardness and crack resistance of the crystals of partially stabilized zirconia on the Y2O3 concentration and the indenter orientation is investigated using the microindentation method. The sample with the lowest concentration of the stabilizing Y2O3 impurity turned out the most crack resistant. This can be explained by a high content of tetragonal phase t in it, which provides the transformation strengthening mechanism of the material, and by a more multilevel character of twinning.
Inorganic Materials | 2013
D. I. Bogomolov; V. T. Bublik; S. Ya. Skipidarov; N. Yu. Tabachkova
Using X-ray diffraction and scanning electron microscopy, we have studied general aspects of defect structure formation in thermoelectric materials in different stages of plastic flow in the equal-channel angular pressing process with three channels. The results demonstrate that materials prepared using this deformation configuration have a fine-grained, homogeneous microstructure with a favorable texture, such that the cleavage planes of the grains are oriented along the extrusion axis. Studies of the structure and properties of the thermoelectric materials allowed us to optimize the equal-channel angular pressing temperature, which should be below the recrystallization onset temperature.
APL Materials | 2016
M. G. Lavrentev; V. B. Osvenskii; Yu. N. Parkhomenko; G. I. Pivovarov; A. I. Sorokin; L. P. Bulat; H.-S. Kim; I. T. Witting; G. J. Snyder; V. T. Bublik; N. Yu. Tabachkova
Temperature-dependent strength of Bi-Sb-Te under uniaxial compression is investigated. Bi-Sb-Te samples were produced by three methods: vertical zone-melting, hot extrusion, and spark plasma sintering (SPS). For zone-melted and extruded samples, the brittle-ductile transition occurs over a temperature range of 200-350 °C. In nanostructured samples produced via SPS, the transition is observed in a narrower temperature range of 170-200 °C. At room temperature, the strength of the nanostructured samples is higher than that of zone-melted and extruded samples, but above 300 °C, all samples decrease to roughly the same strength.
Semiconductors | 2017
A. A. Ivanov; A. I. Sorokin; V. P. Panchenko; I. V. Tarasova; N. Yu. Tabachkova; V. T. Bublik; R. H. Akchurin
Copper-selenide (Cu2Se) samples are produced by mechanochemical synthesis and compaction by spark plasma sintering and hot pressing. The structure and phase composition of the samples before and after heat treatment are studied by the X-ray diffraction technique and electron microscopy. The character of changes in the shape and size of structural elements of the samples is shown. Variations in the phase composition of copper selenide in the temperature range from 25 to 500°C are studied in situ.
Journal of Electronic Materials | 2016
D. I. Bogomolov; V. T. Bublik; N. Yu. Tabachkova; I. V. Tarasova
This paper reports an x-ray diffraction, scanning and transmission electron microscopy study of regularities in the formation of defect structures in thermoelectric materials at different stages of plastic flow during equal-channel angular pressing in a three-channel configuration. We show that this deformation setup produces a homogeneous fine-grain structure with a preferential texture in which grain cleavage planes arrange along the extrusion axis. These studies of the structure and properties of thermoelectric materials were used to choose the optimum temperature for equal-channel angular pressing corresponding to lower pre-recrystallization temperatures.
arXiv: Mesoscale and Nanoscale Physics | 2012
L. P. Bulat; D. A. Pshenai-Severin; V. V. Karatayev; V. B. Osvenskii; Yu. N. Parkhomenko; M. G. Lavrentev; A. I. Sorokin; V.D. Blank; G. I. Pivovarov; V. T. Bublik; N. Yu. Tabachkova
A nanopowder from p-Bi-Sb-Te with particles ~ 10 nm were fabricated by the ball milling using different technological modes. Cold and hot pressing at different conditions and also SPS process were used for consolidation of the powder into a bulk nanostructure and nanocomposites. The main factors allowing slowing-down of the growth of nanograins as a result of recrystallization are the reduction of the temperature and of the duration of the pressing, the increase of the pressure, as well as addition of small value additives (like MoS2, thermally expanded graphite or fullerenes). It was reached the thermoelectric figure of merit ZT=1.22 (at 360 K) in the bulk nanostructure Bi0,4Sb1,6Te3 fabricated by SPS method. Some mechanisms of the improvement of the thermoelectric efficiency in bulk nanocrystalline semiconductors based on BixSb2-xTe3 are studied theoretically. The reduction of nanograin size can lead to improvement of the thermoelectric figure of merit. The theoretical dependence of the electric and heat conductivities and the thermoelectric power as the function of nanograins size in BixSb2-xTe3 bulk nanostructure are quite accurately correlates with the experimental data.
Inorganic Materials | 2012
M. A. Borik; V. T. Bublik; A. V. Kulebyakin; E. E. Lomonova; V. A. Myzina; F. O. Milovich; V. V. Osiko; N. Yu. Tabachkova
The structure of partially stabilized zirconia crystals has been studied by transmission electron microscopy before and after annealing. Structural characterization of Y2O3-doped (2.8 to 4 mol %) zirconia before annealing showed that all of the samples consisted of twin domains whose size was dependent on the stabilizer content. Annealing at 2100°C increased the domain size in the composition range 2.8–3.7 mol % Y2O3 and reduced it at 4 mol % Y2O3. These structural changes allowed us to determine the position of the representative point relative to the phase boundary in the equilibrium phase diagram of the system.
Semiconductors | 2017
L. P. Bulat; V. B. Osvenskii; A. A. Ivanov; A. I. Sorokin; D. A. Pshenay-Severin; V. T. Bublik; N. Yu. Tabachkova; V. P. Panchenko; M. G. Lavrentev
The temperature dependences of the specific heat, thermal conductivity, coefficient of thermal expansion (CTE), and transport coefficients (electrical conductivity and thermoelectric power) of copper selenide are experimentally and theoretically investigated in the temperature range of 300–873 K. The calculation results correlate with the experimental data up to a temperature of ~773 K. The maximum thermoelectric figure of merit of nanostructured copper selenide is ZT ~ 1.8. The correlation dependence between ZT and the thermal conductivity within the entire temperature range under consideration is shown.
Technical Physics Letters | 2016
M. G. Lavrent’ev; V. B. Osvenskii; G. I. Pivovarov; A. I. Sorokin; L. P. Bulat; V. T. Bublik; N. Yu. Tabachkova
We have studied the temperature dependence of the mechanical strength at uniaxial compression for solid solutions based on bismuth and antimony chalcogenides, which were prepared by three methods: (i) vertical zone melting (VZM), (ii) hot extrusion, and (iii) spark plasma sintering (SPS). In the samples of solid solutions obtained by VZM and extrusion, a brittle–ductile transition was observed in a wised temperature interval of 200–350°C. In nanostructured SPS samples, transition from brittle to plastic fracture was observed within 170–200°C. The room-temperature strength of nanostructured samples was eight to nine times as large as that of VZM samples, and the stress–strain curves of these materials were significantly different. At a temperature of about 300°C, the strength of nanostructured solid solutions decreases to nearly zero.
Russian Journal of Electrochemistry | 2016
M. A. Borik; S. I. Bredikhin; V. T. Bublik; A. V. Kulebyakin; I. E. Kuritsyna; E. E. Lomonova; F. O. Milovich; V. A. Myzina; V. V. Osiko; S. V. Seryakov; N. Yu. Tabachkova
Single crystals of solid electrolytes of the (ZrO2)1–x–y(Sc2O3)x(Y2O3)y (x = 0.035–0.11, y = 0‒0.02) system were grown by selective melt crystallization. Stabilization of ZrO2 only with Sc2O3 in the concentration range 9–11 mol % Sc2O3 did not afford crystals with a cubic structure, and only the introduction of additional Y2O3 stabilizers afforded uniform transparent single-phase cubic crystals. All the crystals under study had high microhardness, but low crack resistance. The ion conductivity of crystals with 6 and 9 mol % Sc2O3 (6ScZr and 9ScZr, respectively) is comparable to that of 8 mol % Y2O3-stabilized ZrO2 (8YSZ), which is the most suitable electrolyte in the ZrO2–Y2O3 binary system. The specific conductivity of crystals containing 8–10 mol % Sc2O3 and 1–2 mol % Y2O3 exceeds that of other materials including 8YSZ. The maximum conductivity in the given range of compositions is inherent in the cubic phase with 10 mol % Sc2O3 and 1 mol % Y2O3 (10Sc1YZr).